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# Basic BJT Circuits - MCQ Test

## 20 Questions MCQ Test Mock Test Series for Electrical Engineering (EE) GATE 2020 | Basic BJT Circuits - MCQ Test

Description
This mock test of Basic BJT Circuits - MCQ Test for Railways helps you for every Railways entrance exam. This contains 20 Multiple Choice Questions for Railways Basic BJT Circuits - MCQ Test (mcq) to study with solutions a complete question bank. The solved questions answers in this Basic BJT Circuits - MCQ Test quiz give you a good mix of easy questions and tough questions. Railways students definitely take this Basic BJT Circuits - MCQ Test exercise for a better result in the exam. You can find other Basic BJT Circuits - MCQ Test extra questions, long questions & short questions for Railways on EduRev as well by searching above.
QUESTION: 1

Solution:
QUESTION: 2

### For the transistor in circuit shown in fig. β = 200. Determine the value of IE and IC for given value of VB in question. If VB = 1V

Solution:  QUESTION: 3

### For the transistor in circuit shown in fig. β = 200. Determine the value of IE and IC for given value of VB in question. If VB = 2V

Solution:  Transistor is in stauration. The saturation voltage
VCE = 0.2V  QUESTION: 4

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB. If VBB = 0

Solution:

VBB = 0, Transistor is in cutoff region QUESTION: 5

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB. If VBB = 1V

Solution:  QUESTION: 6

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage Vo for given value of VBB. If VBB = 2V

Solution:  QUESTION: 7

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of
IQ in question If IQ = 0.1 mA

Solution:

I= 0.1 mA QUESTION: 8

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of  IQ in question If IQ = 0.5 mA

Solution:

IE = IQ = 0.5 mA QUESTION: 9

The transistor shown in the circuit of fig. has β = 150. Determine Vo for given value of  IQ in question If IQ = 2mA

Solution:

Transistor is in saturation QUESTION: 10

For the circuit in fig. VB = V and  β = 50. The value of VB is Solution:  QUESTION: 11

For the circuit shown in fig. VCB = 0.5 V and β =100. The value of IQ is Solution:  QUESTION: 12

For the circuit shown in fig. the emitter voltage is VE = 2 V. The value of α is Solution:  QUESTION: 13

For the transistor in fig. β = 50. The value of voltage VEC  is Solution:  QUESTION: 14

The current gain of the transistor shown in the circuit of fig. is β = 125. The Q-point values (ICQ , VCEQ ) are Solution:  QUESTION: 15

For the circuit shown in fig. , let β = 75. The Q-point (ICQ , VCEQ ) is Solution:   QUESTION: 16

The current gain of the transistor shown in the circuit of fig. is β = 100. The values of Q-point (ICQ , VCEQ ) is Solution:

R1 =12 Ω, R2 = 2 Ω  QUESTION: 17

For the circuit in fig. , let β = 60. The value of VECQ  is Solution:    QUESTION: 18

All transistor in the N output mirror in fig. are matched with a finite gain β and early voltage VA = ∞. The expression for each load current is Solution:  QUESTION: 19

Consider the basic three transistor current source in fig. Assume all transistor are matched with finite gain and early voltage VA  = ∞.The expression for Io is Solution:  QUESTION: 20

Consider the wilder current source of fig. Both of transistor are identical and β>>1 and VBE1 = 0.7 V. The value of resistance R1 and RE to produce Iref  = 1 mA and Io = 12 μA is (Vt = 0.026) Solution:

If β>>1 and transistor are identical  