Test: FET Amplifier - 2 - Electrical Engineering (EE)
15 Questions MCQ Test GATE Electrical Engineering (EE) 2024 Mock Test Series - Test: FET Amplifier - 2
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Detailed Solution for Test: FET Amplifier - 2 - Question 3
FET:- FET stands for Field Effect Transistor and is a three-terminal active device that uses an electric field to control the current flow. The three terminals are Gate, Source and, Drain.
FET as Amplifier:- FET can be used as an amplifier when one or more FETs are used. The most common type of FET amplifier is the MOSFET amplifier.
Loading effect –It can be defined as the effect on the source by the load impedance. Usually loading effect reduces the voltage level of a voltage source
We will analyze this problem by going through options.
High input impedance.
One of the most important factors that is kept in mind while designing FET as an amplifier is, it should have high input impedance. It minimizes the effect of loading on input and a thus significant amount of input voltage signal is maintained for amplification. Hence it is the best option to pick.
Small size,temperature dependence and, unipolar nature are also important features of FETs when comparing with BJTs.But when we are talking about FET as an amplifier its high input impedance and low output impedance matter.
Small size: Smaller the size of FET better it is for modern uses.
Temperature dependence: BJT leakage current or reverse saturation current is highly sensitive to temperature. It doubles for every 10o celcius.There is no leakage current in FET which makes it thermally stable as compared to BJT.
Unipolar nature: Unlike BJTs FETs are unipolar in nature. As there is only one type of charge carrier.
Detailed Solution for Test: FET Amplifier - 2 - Question 6
FET is a device that is usually operated in the constant-current portion of its output characteristics. But if it is operated on the region prior to pinch-off (that is where VDS is small, say below 100 mV), it will behave as a voltage-variable resistor.
It is due to the fact that in this region drain-to-source resistance RDS can be controlled by varying the bias voltage VGS.
In such applications the FET is also referred to as a voltage-variable resistor or volatile dependent resistor. It finds applications in many areas where this property is useful.
Detailed Solution for Test: FET Amplifier - 2 - Question 13
As the input circuit of FET is reverse biased, FET exhibits a much higher input impedance ( in the order of 100 M 12 ) and lower output impedance and there will be a high degree of isolation between input and output.
So, FET can act as an excellent buffer amplifier but the BJT has low input impedance because its input circuit is forward biased.
The bandwidth of an RC-coupled amplifier is limited by
Detailed Solution for Test: FET Amplifier - 2 - Question 14
(i) In capacitively coupled amplifiers, the coupling and bypass capacitors affect the low-frequency cut-off. These capacitors form a high-pass filter with circuit resistances. (ii) Coupling and bypass capacitors are also called external capacitors.
For high-frequency response, it is determined by the device’s internal capacitance and the Miller effect. (iii) Device internal capacitance is shunted and also called as Junction capacitors.
The common source stage of a CMOS amplifier Provides:
Detailed Solution for Test: FET Amplifier - 2 - Question 15
The value of Gate resistance (RG) is in mega-ohm (MΩ).
As Rin = RG
The input impedance of a common source amplifier is very high.
The value of ro, RD, and RL lies in kilo-ohm (kΩ). So the parallel combination of ro, RD, and RL is in kilo-ohm (kΩ). That’s why the output impedance and voltage gain of the common source amplifier is moderately high.
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