Test: BJT Circuits At DC


10 Questions MCQ Test Electronic Devices | Test: BJT Circuits At DC


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This mock test of Test: BJT Circuits At DC for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: BJT Circuits At DC (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: BJT Circuits At DC quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: BJT Circuits At DC exercise for a better result in the exam. You can find other Test: BJT Circuits At DC extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

Which of the following condition is true for cut-off mode?

Solution:

The base current as well as the collector current are zero in cut-off mode.

QUESTION: 2

 Which of the following is true for the cut-off region in an npn transistor?

Solution:

Both collector and emitter current are zero in cut-off region.

QUESTION: 3

Which of the following is true for a typical active region of an npn transistor?

Solution:

Most commonly used transistors have Vce less than 0.4 V for the active region.

QUESTION: 4

 Which of the following is true for the active region of an npn transistor?

Solution:

 The base current and the collector current are directly proportional to each other and the potential difference between the collector and the base is always less than 0.4 V.

QUESTION: 5

Which of the following is true for the saturation region of BJT transistor?

Solution:

The collector current is directly proportional to the base current in the saturation region of the BJT.

QUESTION: 6

Which of the following is true for a npn transistor in the saturation region?

Solution:

 The commonly used npn transistors have a potential difference of around 0.5V between he collector and the base.

QUESTION: 7

The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________

Solution:

The value of Vcb is -0.5V for a pnp transistor and 0.5V for an npn transistor.

QUESTION: 8

For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) is

Solution:

For a pnp transistor Vce is less than 0.3V, for an npn transistor it is greater than 0.3V.

QUESTION: 9

Which of the following is true for a pnp transistor in active region?

Solution:

Whether the transistor in npn or pnp, for it be in active region the EB junction must be reversed bias the CB junction must be forward bias.

QUESTION: 10

Which of the following is true for a pnp transistor in saturation region?

Solution:

Whether the transistor in npn or pnp, for it be in saturation region the EB junction must be forward bias the CB junction must be forward bias.

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