Test: BJTs Current-Voltage Characteristics


10 Questions MCQ Test Electronic Devices | Test: BJTs Current-Voltage Characteristics


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This mock test of Test: BJTs Current-Voltage Characteristics for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: BJTs Current-Voltage Characteristics (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: BJTs Current-Voltage Characteristics quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: BJTs Current-Voltage Characteristics exercise for a better result in the exam. You can find other Test: BJTs Current-Voltage Characteristics extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

The curve between the collector current versus the potential difference between the base and emitter is

Solution:

The natural logarithm of the collector current depends directly on the the potential difference between the base and the emitter.

QUESTION: 2

The curve between the collector current and the saturation is

Solution:

The collector current depends directly on the saturation current.

QUESTION: 3

 The magnitude of the thermal voltage is given by

Solution:

kT/q is the correct mathematical expression for the thermal voltage.

QUESTION: 4

The correct relation between the transistor parameters α and ß are related by

Solution:

Only expression α = ß/ß + 1 is the correct expression that relates α and ß.

QUESTION: 5

 The correct expression relating the emitter current Ie to the collector current Ic is

Solution:

Ie = Ic/α or Ic = α Ie

QUESTION: 6

The value of the thermal voltage at room temperature can be approximated as

Solution:

Thermal voltage is given by kT/q which at T = 25 degrees Celsius is approximately 25 mV.

QUESTION: 7

The correct relation between the emitter current Ie and the base current Ib is given by

Solution:

The correct mathematical expression are Ie = (1 – ß) Ib and Ib = (1 – α) Ie respectively.

QUESTION: 8

The Early Effect is also called as

Solution:

 At a given value of vBE, increasing vCE increases the reverse-bias voltage on the collector–base junction, and thus increases the width of the depletion region of this junction. This in turn results in a decrease in the effective base width W. Also the saturation current is inversely proportional to the width, the saturation current will increase and also makes collector current increases proportionally. This is the Early Effect. For the reasons mentioned above, it is also known as the base-width modulation effect.

QUESTION: 9

 For the BJT to operate in active mode Collector-Base junction must be

Solution:

The BJT operates in active mode when the collector-Base junction is reversed bias. Also doping cannot prevent saturation of the transistor.

QUESTION: 10

Collector current (Ic) reaches zero when

Solution:

 Ic = Is exp (Vbe/Vt) – Isc exp(Vbc/Vt). In this expression put ic = 0 and simplify.

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