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# Test: BJTs Device Structures And Physical Operations

## 11 Questions MCQ Test Electronic Devices | Test: BJTs Device Structures And Physical Operations

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This mock test of Test: BJTs Device Structures And Physical Operations for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 11 Multiple Choice Questions for Electrical Engineering (EE) Test: BJTs Device Structures And Physical Operations (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: BJTs Device Structures And Physical Operations quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: BJTs Device Structures And Physical Operations exercise for a better result in the exam. You can find other Test: BJTs Device Structures And Physical Operations extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

### Which of the following is not a part of a BJT?

Solution:

BJT consists of three semiconductor regions, base region, emitter region and collector region.

QUESTION: 2

### The number of pn junctions in a BJT is/are

Solution:

There are two pn junctions, base-emitter junction and collector-emitter junction respectively.

QUESTION: 3

### In which of the following modes can a BJT be used?

Solution:

These three are the defined regions in which a BJT operates.

QUESTION: 4

If a BJT is to be used as an amplifier, then it must operate in___________

Solution:

A BJT operates as an amplifiers in active mode and as a switch in cut-off or saturation mode.

QUESTION: 5

If a BJT is to be used as a switch, it must operate in____________

Solution:

A BJT operates as an amplifiers in active mode and as a switch in cut-off or saturation mode.

QUESTION: 6

In cut off mode

Solution:

In cut-off mode there is no current flowing through the BJT hence both junctions must be reversed biased else if either of them is forward biased then the current will flow.

QUESTION: 7

In cut off mode

Solution:

In cut-off mode there is no current flowing through the BJT hence both junctions must be reversed biased else if either of them is forward biased then the current will flow.

QUESTION: 8

On which of the following does the scale current not depends upon?

Solution:

The saturation current does not depends upon the volume of the base-emitter junction. Instead it depends upon the area of the cross section of the base-emitter junction in a direction perpendicular to the flow of current.

QUESTION: 9

On which of the following does the collector current not depends upon?

Solution:

Collector current depends linearly of the saturation current and exponentially to the ratio of the voltage difference between the base and collector and thermal voltage.

QUESTION: 10

The range for the transistor parameter also referred as common-emitter current gain has a value of__________ for common devices.

Solution:

Most commonly used transistors have a voltage gain of in the range of 50-200. Only some specially designed transistors have a transistor parameter in the range of 1000.

QUESTION: 11

The collector current Ic is related to the emitter current Ie by a factor k. If b is the transistor parameter then the value of k in terms of b is

Solution:

Ic = k Ie (given) and also Ie = (b + 1)/b Ic (standard result). Equating these two results we get k = b/(b + 1).