Test: Electronic Devices And Circuits - 6


25 Questions MCQ Test Electronic Devices | Test: Electronic Devices And Circuits - 6


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QUESTION: 1

In P-N junction, the region containing the uncompensated acceptor and donor ions is called

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QUESTION: 2

In a photodiode the current is due to

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QUESTION: 3

Consider the following statements

  1. Acceptor level lies close the valence band.
  2. Donor level lies close to the valence band.
  3. n type semiconductor behaves as an insulator at 0 K.
  4. p type semiconductor behaves as an insulator at 0 K.
Of these statements:

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QUESTION: 4

If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

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QUESTION: 5

Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

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QUESTION: 6

No load d.c. output will be least in case of

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QUESTION: 7

When an electron breaks a covalent bond and moves away,

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QUESTION: 8

In which condition does BJT behave like a closed switch?

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QUESTION: 9

A photo diode is

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QUESTION: 10

Germanium and Si phosphorus have their maximum spectral response in the

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QUESTION: 11

No load d.c. output will be least in case of

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QUESTION: 12

When an electron breaks a covalent bond and moves away,

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QUESTION: 13

A photo diode is

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QUESTION: 14

In which condition does BJT behave like a closed switch?

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QUESTION: 15

Germanium and Si phosphorus have their maximum spectral response in the

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QUESTION: 16

High purity copper is obtained by

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QUESTION: 17

Photo electric emission can occur only if the frequency of light is more than threshold frequency.

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QUESTION: 18

In a JFET the width of channel is controlled by

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QUESTION: 19

The unit of thermal resistance of a semi-conductor device is

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QUESTION: 20

Figure represents a

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QUESTION: 21

For generating 1 MHz frequency signal, the most suitable circuit is

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QUESTION: 22

A doped semi-conductor is called

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QUESTION: 23

In n type MOSFET, the substrate

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QUESTION: 24

The first and the last critical frequency of an RC driving point impedance function must respectively by

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QUESTION: 25

The diffusion current is proportional to

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