Test: Electronic Devices And Circuits - 7


25 Questions MCQ Test Electronic Devices | Test: Electronic Devices And Circuits - 7


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QUESTION: 1

Lowest resistivity of the following is

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QUESTION: 2

Peak inverse voltage will be highest for

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QUESTION: 3

In CE configuration, the output characteristics of a bipolar junction transistor is drawn between

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QUESTION: 4

Assertion (A): The reverse current in a p-n junction is nearly constant.

Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.

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QUESTION: 5

An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation?
[ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δnp) is the excess electron (hole) density ].

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QUESTION: 6

Resistivity of metals is expressed in terms of

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QUESTION: 7

Figure shows characteristics curves for bipolar transistor. These curves are

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QUESTION: 8

Zener diode is invariably used with

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QUESTION: 9

The relation between plate current and plate voltage of a vacuum diode is called

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QUESTION: 10

Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--hole pair generation will be

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QUESTION: 11

The maximum rectification efficiency in case of full wave rectifier is

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QUESTION: 12

For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be

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QUESTION: 13

When an electron rises through a potential of 100 V it will acquired an energy of

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QUESTION: 14

Which one of the following gain equations is correct for a MOSFET common-source amplifier?
(gm is mutual conductance, and RD is load resistance at the drain)

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QUESTION: 15

If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of

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QUESTION: 16

Which of the following is the ferric electric material?

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QUESTION: 17

The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called

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QUESTION: 18

In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as

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QUESTION: 19

In which n type device does p substrate extend upto silicon dioxide layer?

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QUESTION: 20

In a N-type semi-conductor, the concentration of minority carriers is mainly depends on

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QUESTION: 21

The band gap of Si at room temperature is

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QUESTION: 22

Spot the odd one out

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QUESTION: 23

Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.

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QUESTION: 24

Figure represents a

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QUESTION: 25

If the energy gap of a semiconductor is 1.1 eV, then it would be.

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