Assertion (A): Hall effect is used to find the type of semiconductor.
Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
The fT of a BJT is related to its gm, Cp and Cμ as follows.
When a p-n junction is forward biased. The width of depletion layer decreases.
In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
When a p-n Junction is forward biased
In a JFET, the drain current is maximum when
A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as
In a zener diode
Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?
The depletion layer across a P+ n junction lies
An increase of reverse voltage decreases the junction capacitance.
The maximum forward current in case of signal diode is in the range of
On which of the following effect do thermocouples work?
Which of the following constitutes an active component?
Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode?
Resistivity of carbon is around
Which of the following is anti-ferromagnetic material?
Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.
Reason (R): A PIN diode has an intrinsic layer between p and n regions.
In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
In n channel JFET
Figure represents a
Almost all resistors are made in a monolithic integrated circuit
The forbidden energy gap for silicon is
In energy band diagram of n type semiconductor, the donor energy level is
For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for