(Q.1 & Q.2) Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V.
Q. What is the value of Vt for this transistor?
If the process transconductance parameter is 50μA/V2, what is the MOSFET’s W/L?
(Q.3-Q.5) Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V.
If the amplifier is biased to operate with an overdrive voltage VOV of 0.5 V, find the incremental gain at the bias point.
For amplifier biased to operate with an overdrive voltage of 0.5V, and disregarding the distortion caused by the MOSFET’s square-law characteristic, what is the largest amplitude of a sine-wave voltage signal that can be applied at the input while the transistor remains in saturation?
Use the standard mathematical formula to obtain the result.
For the input signal of 1.5V what is the value of the gain value obtained?
The amplitude of the output voltage signal that results is approximately equal to Voq – VOB = 2 – 0.61 = 1.39v.
The gain implied by amplitude is
Gain = -1.39/0.11 = -12.64 V/V.
Which of the following is the fastest switching device?
MOSFET is the fastest switching device among the given four options.
Bias point is also referred by the name
Bias point is called dc operating point as the MOSFET functions best at this point. Also since at the bias point no signal component is present it is called quiescent point (he reason why it is represented by the symbol ‘Q’)
(Q.8 –Q.10) Consider the amplifier circuit shown below. The transistor is specified to have Vt = 0.4 V, kn = 0.4 mA/V2, W/L = 10 and λ = 0. Also, let VDD = 1.8V, RD = 17.5kΩ, VGS = 0.6V and vgs = 0V.
Q. Find ID.
Av = – kn Vov RD
= -0.4 * 10 * 0.2 * 17.5
= – 14.4v