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QUESTION: 1

An NMOS technology has μ_{n}C_{ox} = 50 μA/V^{2} and V_{t} = 0.7 V. For a transistor with L = 1μm, find the value of W that results in g_{m} 1mA/V at I_{D} = 0.5 mA.

Solution:

QUESTION: 2

Consider an NMOS transistor having k_{n}= 2 mA/V^{2}. Let the transistor be biased at V_{OV} = 1V. For operation in saturation, what dc bias current I_{D} results? If a +0.1-V signal is superimposed on V_{GS}, find the corresponding increment in collector current by evaluating the total collector current I_{D} and subtracting the dc bias current I_{D}.

Solution:

QUESTION: 3

We know I_{D} =1/2 k_{n} (V_{GS} + v_{gs} – V_{t})^{2}. Let the signal v_{gs} be a sine wave with amplitude V_{gs}, and substitute v_{gs} = V_{gs} sin ω t in Eq.(5.43). Using the trigonometric identity show that the ratio of the signal at frequency 2ω to that at frequency ω , expressed as a percentage (known as the second-harmonic distortion) is

Solution:

QUESTION: 4

If in a particular application V_{gs} is 10 mV, find the minimum overdrive voltage at which the transistor should be operated so that the second-harmonic distortion is kept to less than 1%.

Solution:

QUESTION: 5

(Q.5-Q.7) An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor.

If a gain of at least 5 V/V is needed, what value of g_{m} is required?

Solution:

g_{m}R_{d} = 5 or g_{m}= 5/50 mA/V.

QUESTION: 6

Using a dc supply of 3 V, what values of I_{D} and V_{OV} would you choose?

Solution:

QUESTION: 7

What W/L ratio is required if μ_{n}C_{ox} = 200 μA/V^{2}?

Solution:

QUESTION: 8

(Q.8-Q.9) For a 0.8-μm CMOS fabrication process: V_{tn}= 0.8 V, V_{tp} = −0.9 V, μ_{n}C_{ox} = 90 μA/V^{2}, μ_{p}C_{ox }= 30 μA/V^{2}, Cox = 1.9 fF/μm2, V_{A} (n-channel devices) = 8L (μm), and |V_{A}| (p-channel devices) = 12L (μm).

**Q. Find the small-signal model parameters (g _{m}, r_{o} and g_{mb}) for an NMOS transistor having W/L = 20 μm/2 μm and operating at I_{D} = 100 μA and |V_{SB}| = 1V.**

Solution:

QUESTION: 9

Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

Solution:

QUESTION: 10

The overdrive voltage at which each device must be operating is

Solution:

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