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# Test: MOSFET In Small Signal Operation

## 10 Questions MCQ Test Electronic Devices | Test: MOSFET In Small Signal Operation

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This mock test of Test: MOSFET In Small Signal Operation for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: MOSFET In Small Signal Operation (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: MOSFET In Small Signal Operation quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: MOSFET In Small Signal Operation exercise for a better result in the exam. You can find other Test: MOSFET In Small Signal Operation extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

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QUESTION: 2

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QUESTION: 3

### We know ID =1/2 kn (VGS + vgs – Vt)2. Let the signal vgs be a sine wave with amplitude Vgs, and substitute vgs = Vgs sin ω t in Eq.(5.43). Using the trigonometric identity show that the ratio of the signal at frequency 2ω to that at frequency ω , expressed as a percentage (known as the second-harmonic distortion) is

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QUESTION: 4

If in a particular application Vgs is 10 mV, find the minimum overdrive voltage at which the transistor should be operated so that the second-harmonic distortion is kept to less than 1%.

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QUESTION: 5

(Q.5-Q.7) An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor.

If a gain of at least 5 V/V is needed, what value of gm is required?

Solution:

gmRd = 5 or gm= 5/50 mA/V.

QUESTION: 6

Using a dc supply of 3 V, what values of ID and VOV would you choose?

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QUESTION: 7

What W/L ratio is required if μnCox = 200 μA/V2?

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QUESTION: 8

(Q.8-Q.9) For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm).

Q. Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

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QUESTION: 9

Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

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QUESTION: 10

The overdrive voltage at which each device must be operating is

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