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# Test: MOSFETs Device Structure & Physical Operation

## 10 Questions MCQ Test Electronic Devices | Test: MOSFETs Device Structure & Physical Operation

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This mock test of Test: MOSFETs Device Structure & Physical Operation for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: MOSFETs Device Structure & Physical Operation (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: MOSFETs Device Structure & Physical Operation quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: MOSFETs Device Structure & Physical Operation exercise for a better result in the exam. You can find other Test: MOSFETs Device Structure & Physical Operation extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

### For NMOS transistor which of the following is not true?

Solution:

The threshold voltage is positive for NMOS.

QUESTION: 2

### Process transconductance parameter is directly proportional to

Solution:

It is the product of the electronic mobility with the oxide capacitance (F/m2).

QUESTION: 3

### The SI Units of the Process transconductance Parameter (k’) is

Solution:

k’ = μn Cox where μn is electronic mobility (m2/Vs) and Cox is oxide capacitance is (F/m2).

QUESTION: 4

Aspect ratio of the MOSFET has the units of

Solution:

It is the ratio of the induced channel width (w) to the induced channel length (l).

QUESTION: 5

The MOSFET transconductance parameter is the product of

Solution:

This statement only satisfies the mathematical expression.

QUESTION: 6

With the potential difference between the source and the drain kept small (VDS is small), the MOSFET behaves as a resistance whose value varies __________ with the overdrive voltage

Solution:

For small VDS, resistance r is given by
R = 1 / ((μn Cox)(w/l)(VOV)).

QUESTION: 7

For a p channel MOSFET which of the following is not true?

Solution:

The induced channel is p type region which is induced by applying a negative potential to the gate.

QUESTION: 8

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

Solution:

The voltage across the source will be VOV and the voltage will decrease linearly to VOV – VDS as we reach the drain end. The width of the induced channel is proportional to the voltage.

QUESTION: 9

The saturation current of the MOSFET is the value of the current when

Solution:

By definition of the MOSFET saturation current.

QUESTION: 10

At channel pinch off

Solution:

It is a characteristics of a channel pinch off.