For NMOS transistor which of the following is not true?
The threshold voltage is positive for NMOS.
Process transconductance parameter is directly proportional to
It is the product of the electronic mobility with the oxide capacitance (F/m2).
The SI Units of the Process transconductance Parameter (k’) is
k’ = μn Cox where μn is electronic mobility (m2/Vs) and Cox is oxide capacitance is (F/m2).
Aspect ratio of the MOSFET has the units of
It is the ratio of the induced channel width (w) to the induced channel length (l).
The MOSFET transconductance parameter is the product of
This statement only satisfies the mathematical expression.
With the potential difference between the source and the drain kept small (VDS is small), the MOSFET behaves as a resistance whose value varies __________ with the overdrive voltage
For small VDS, resistance r is given by
R = 1 / ((μn Cox)(w/l)(VOV)).
For a p channel MOSFET which of the following is not true?
The induced channel is p type region which is induced by applying a negative potential to the gate.
When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)
The voltage across the source will be VOV and the voltage will decrease linearly to VOV – VDS as we reach the drain end. The width of the induced channel is proportional to the voltage.
The saturation current of the MOSFET is the value of the current when
By definition of the MOSFET saturation current.
At channel pinch off
It is a characteristics of a channel pinch off.