Test: P-i-n Diode And Its Characteristics


10 Questions MCQ Test Electronic Devices | Test: P-i-n Diode And Its Characteristics


Description
This mock test of Test: P-i-n Diode And Its Characteristics for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: P-i-n Diode And Its Characteristics (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: P-i-n Diode And Its Characteristics quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: P-i-n Diode And Its Characteristics exercise for a better result in the exam. You can find other Test: P-i-n Diode And Its Characteristics extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

PIN diode is a photosensitive diode because of _______

Solution:

 An intrinsic layer that is sandwiched between p and n layers. This gives a larger surface area making it compatible for photosensitivity. Reverse bias causes an increased depleted region in a PIN diode.

QUESTION: 2

 During forward bias, the PIN diode acts as _______

Solution:

In forward bias, the forward resistance decreases and acts as a variable resistor. The low frequency model of a PIN diode neglects the input capacitive values.

QUESTION: 3

During reverse bias, the PIN diode acts as _______

Solution:

In reverse bias, the intrinsic layer is completely covered by depletion layer. The stored charges vanishes acting like a variable capacitor. The high frequency model of a PIN diode neglects the input resistances.

QUESTION: 4

When the p and n regions are used for high resistivity, the depletion region at the respective places is called _________

Solution:

When p region is used for high resistance, the depletion layer is high at p side.When n side is used the depletion layer is high at n side. They are called as π and ϒ regions respectively.

QUESTION: 5

The applications for PIN diode are __________

Solution:

Being employed at 300Hz, the swept voltage is attained at π region.Then it’s used as a microwave switch. Swept voltage is nothing but, the voltage at which the complete intrinsic layer is swept out as a depleted one.

QUESTION: 6

In high frequency model, the values of resistance ‘R’ and capacitance ‘C’ are _______

Solution:

 At high frequency, the applied values for resistance and capacitance is 0.1 to 10KΩ and 0.02 to 2pF respectively. At high frequencies, it almost acts as a perfect resistor.

QUESTION: 7

What happens in PIN diode for low frequency model?

Solution:

In a low frequency model, the resistance decreases and reactance increases.Here the variable resistance is neglected. At low frequencies, the charge can be removed and the diode can be turned off.

QUESTION: 8

 Which of the following is true about a PIN diode?

Solution:

Due to increased depletion region, the covalent bonds break and increase the surface area for photosensitivity. This property is used in fields of light sensors, image scanners, artificial retina systems.

QUESTION: 9

 In the application of frequency models, the value of forward current is _____

Solution:

The forward current depends on mobility and carrier concentration. In frequency models, the value of forward current is IF = A*(µPP + µNN)q. Where, µP and µNare the mobility of p and n type charge carriers respectively.

QUESTION: 10

The forward resistance for a PIN diode is given by ________

Solution:

Forward resistance for a PIN diode depends on the width, current density and positive carrier concentration of the diode. No diode is perfectly ideal. In practise, a diode offers a small resistance in forward bias which is called as forward resistance.