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# Test: The Body Effect

## 10 Questions MCQ Test Electronic Devices | Test: The Body Effect

Description
This mock test of Test: The Body Effect for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: The Body Effect (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: The Body Effect quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: The Body Effect exercise for a better result in the exam. You can find other Test: The Body Effect extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

### The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.

Solution:

The voltage difference between the source and the bulk, VBS changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in the depletion region. This results in a difference in threshold voltage which equals the difference in charge in the depletion region divided by the oxide capacitance.

QUESTION: 2

### The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the _________________ as a function of the source-to-drain voltage.

Solution:

The change in threshold current is directly proportional to the square root of the drain current. For further assistance check the mathematical expression for the same.

QUESTION: 3

### The SI units of the body effect parameter is

Solution:

Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. In this expression k is the body effect parameter hence its units can be determined.

QUESTION: 4

An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.

Solution:

Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. use this expression to obtain the desired result.

QUESTION: 5

The threshold voltage is

Solution:

The threshold voltage depends only on the temperature and it decreases by roughly 2 mV for every degree Celsius increase in the temperature.

QUESTION: 6

As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown known as

Solution:

As the voltage on the drain is increased, a value is reached at which the pn junction between the drain region and substrate suffers avalanche breakdown. This breakdown usually occurs at voltages of 20 V to 150 V and results in a somewhat rapid increase in current (known as a weak avalanche).

QUESTION: 7

A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is

Solution:

Punch-through occurs in devices with relatively short channels when the drain voltage is increased to the point that the depletion region surrounding the drain region extends through the channel to the source. The drain current then increases rapidly. Normally, punch-through does not result in permanent damage to the device.

QUESTION: 8

At ______________ the drain current is no longer related to the Vgs by square law relationship.

Solution:

At velocity saturation the current depends linearly on the Vgs.

QUESTION: 9

In MOSFETs a breakdown may occur at around 30 V. This is due to

Solution:

The breakdown of the oxide at the gate may occur when the voltage is around 30 V. This may also permanently damage the device.

QUESTION: 10

Which of the below issues may not be experienced when using MOSFETs?

Solution:

All of the mentioned are some of the common issues that one may face while dealing with MOSFETs.