Test: Transistor Switching Times


10 Questions MCQ Test Electronic Devices | Test: Transistor Switching Times


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This mock test of Test: Transistor Switching Times for Electrical Engineering (EE) helps you for every Electrical Engineering (EE) entrance exam. This contains 10 Multiple Choice Questions for Electrical Engineering (EE) Test: Transistor Switching Times (mcq) to study with solutions a complete question bank. The solved questions answers in this Test: Transistor Switching Times quiz give you a good mix of easy questions and tough questions. Electrical Engineering (EE) students definitely take this Test: Transistor Switching Times exercise for a better result in the exam. You can find other Test: Transistor Switching Times extra questions, long questions & short questions for Electrical Engineering (EE) on EduRev as well by searching above.
QUESTION: 1

The collector current will not reach the steady state value instantaneously because of_________

Solution:

When a pulse is given, the collector current will not reach the steady state value instantaneously because of stray capacitances. The charging and discharging of capacitance makes the current to reach a steady state value after a given time constant.

QUESTION: 2

For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch is initially closed. At t=0, it is opened. At which time the BJT leaves the active region?

Solution:

 At t < 0, the BJT is OFF in cut off region. IB=0 as β=∞, so IC=IE. When t > 0, switch opens and BJT is ON. The voltage across capacitor increases. From the input loop, -5-VBE-I(4.3K)+10=0 and gives I=1mA. IC1=1-0.5=0.5mA. VC1=0.7+4.3+10=-5V. IC1=C1dVC1/dt. From this equation, we get t=50ms.

QUESTION: 3

 The technique used to quickly switch off a transistor is by_________

Solution:

The technique used to quickly switch off a transistor is by reverse biasing its base to collector junction. It is demonstrated in a high voltage switching circuit. The advantage of this circuit is that it is not necessary to have high voltage control signal.

QUESTION: 4

The disadvantage of using the method of reverse biasing base emitter junction is_________

Solution:

This method is used to quickly switch off a transistor is by reverse biasing its base to collector junction. It is demonstrated in a high voltage switching circuit. The disadvantage of using the method of reverse biasing base emitter junction is that the output does not switch completely to GND due to forward voltage drop of the diode.

QUESTION: 5

Which of the following circuits helps in the applications of switching times?

Solution:

This is an inverter, in which the transistor in the circuit is switched between cut off and saturation. The load, for example, can be a motor or a light emitting diode or any other electrical device.

QUESTION: 6

Which of the following helps in reducing the switching time of a transistor?

Solution:

Connecting a resistor connected from base of a transistor to ground/negative voltage helps in reducing the switching the switching time of the transistor. When transistor saturate, there is stored charge in the base that must be removed before it turns off.

QUESTION: 7

 The time taken for a transistor to turn from saturation to cut off is _________

Solution:

When sufficient charge carriers exist, the transistor goes into saturation. When the switch is turned off, in order to go into cut off, the charge carriers in the base region need to leave. The longer it takes to leave, the longer it takes for a transistor to turn from saturation to cut off.

QUESTION: 8

The switching of power with a PNP transistor is called _________

Solution:

Sometimes DC current gain of a bipolar transistor is too low to directly switch the load current or voltage, so multiple switching transistors is used. The load is connected to ground and the transistor switches the power to it.

QUESTION: 9

The base emitter voltage in a cut off region is _________

Solution:

From the cut off characteristics, the base emitter voltage (VBE) in a cut off region is less than 0.7V. The cut off region can be considered as ‘off mode’. Here, VBE < 0.7 and IC=0. For a PNP transistor, the emitter potential must be negative with respect to the base.

QUESTION: 10

Switching speed of P+ junction depends on _________

Solution:

Switching leads to move holes in P region to N region as minority carriers. Removal of this accumulation determines switching speed. P+ regards to a diode in which the p type is doped excessively.

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