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The GTO (gate turn-off thyristor) is a
Just like a SCR, the GTO is a four layer p-n-p-n device.
The GTO can be turned off
The GTO can be turned off by applying a negative gate pulse to the gate terminal.
The anode current is ideally limited by the
The SCR or any device is connected through the load, hence the magnitude of the anode current (same as load current) will depend on the supply voltage and load impedance.
In a GTO the n+ layer forms the
The bottom n+ layer forms the cathode.
The turn-off gain βoff of the GTO is given by
βoff = (anode current/gate current).
A GTO can be represented by two transistors T1 & T2. The current gain of both transistors are α1 and α2 respectively. A low value of gate current requires
In order that the gate current for turning-off the device is low, α2 should be made as nearer to unity as possible whereas α1 should be small.
Gold doped GTOs have _____________ as compared to the conventional GTOs
Gold doping reduces the negative gate current requirements, different kinds of dopings have different advantages over the others.
Latching current for the GTOs is ________ as compared to CTs (Conventional thyristors).
Latching current of GTOs is 2-4A as compared to 200 to 400 mA in case of CT’s.
In case of the two-transistor model (T1 & T2) of GTO with anode-short, the anode-short is placed between the
Draw the model. The anode-short resistor is connected between emitter (Anode A of GTO) with base of T1 transistor.
Choose the correct statement:GTOs have _________ as compared to the CTs.
GTOs have less turn-on and turn-off time, making it efficient for high frequency applications.