Test: MOSFET
20 Questions MCQ Test Power Electronics | Test: MOSFET
| 1 Crore+ students have signed up on EduRev. Have you? |
It is an enhancement of the FET devices (field effect) using MOS technology.
MOSFET is a three terminal device D, G & S.
It is a voltage controlled device.
Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
MOSFET requires gate signals with lower amplitude as compared to BJTs & has lower switching losses.
MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled unlike the BJT & only electron current flows.
The arrow is to indicate the direction of electrons (opposite to the direction of conventional current flow).
Correct Answer :- b
Explanation : The gate to source voltage is the controlling parameter in a MOSFET.
In the internal structure of a MOSFET, a parasitic BJT exists between the
Examine the internal structure of a MOSFET, notice the n-p-n structure between the drain & source. A p-channel MOSFET will have a p-n-p structure.
In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the
It is the minimum voltage to induce a n-channel/p-channel which will allow the device to conduct electrically through its length.
It is Id vs Vds which are plotted for different values of Vgs (gate to source voltage).
In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is
The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.
At turn-on the initial delay or turn on delay is the time required for the
It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.
MOSFET has lower switching losses due to its unipolar nature & less turn off time. All of the other statements are false.
Which among the following devices is the most suited for high frequency applications?
MOSFET has the least switching losses among the rest of the devices.
MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.
Gate current = 0 so device is off (ideally).
For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp
Use Id = Idd x [1-Vgs/Vp]2.
Complementary MOS consumes very less power as compared to all the earlier devices.
The N-channel MOSFET is considered better than the P-channel MOSFET due to its
The N-channel are faster than the P-channel type.
|
5 videos|39 docs|63 tests
|
|
Use Code STAYHOME200 and get INR 200 additional OFF
|
Use Coupon Code |
|
5 videos|39 docs|63 tests
|
Download free EduRev App
Related content with Test: MOSFET
|
|
|
Related tests with Test: MOSFET
|
|
|
|
|
|
© EduRev
|
Education Revolution
|
Follow Us
|
