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# Test: MOSFET

## 20 Questions MCQ Test Power Electronics | Test: MOSFET

Description
Attempt Test: MOSFET | 20 questions in 20 minutes | Mock test for Electronics and Communication Engineering (ECE) preparation | Free important questions MCQ to study Power Electronics for Electronics and Communication Engineering (ECE) Exam | Download free PDF with solutions
QUESTION: 1

### The MOSFET combines the areas of _______ & _________

Solution:

It is an enhancement of the FET devices (field effect) using MOS technology.

QUESTION: 2

### Which of the following terminals does not belong to the MOSFET?

Solution:

MOSFET is a three terminal device D, G & S.

QUESTION: 3

### Choose the correct statement

Solution:

It is a voltage controlled device.

QUESTION: 4

Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT

Solution:

MOSFET requires gate signals with lower amplitude as compared to BJTs & has lower switching losses.

QUESTION: 5

Choose the correct statement

Solution:

MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled unlike the BJT & only electron current flows.

QUESTION: 6

The arrow on the symbol of MOSFET indicates

Solution:

The arrow is to indicate the direction of electrons (opposite to the direction of conventional current flow).

QUESTION: 7

The controlling parameter in MOSFET is

Solution:

Explanation : The gate to source voltage is the controlling parameter in a MOSFET.

QUESTION: 8

In the internal structure of a MOSFET, a parasitic BJT exists between the

Solution:

Examine the internal structure of a MOSFET, notice the n-p-n structure between the drain & source. A p-channel MOSFET will have a p-n-p structure.

QUESTION: 9

In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the

Solution:

It is the minimum voltage to induce a n-channel/p-channel which will allow the device to conduct electrically through its length.

QUESTION: 10

The output characteristics of a MOSFET, is a plot of

Solution:

It is Id vs Vds which are plotted for different values of Vgs (gate to source voltage).

QUESTION: 11

In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is

Solution:

The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.

QUESTION: 12

At turn-on the initial delay or turn on delay is the time required for the

Solution:

It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.

QUESTION: 13

Choose the correct statement

Solution:

MOSFET has lower switching losses due to its unipolar nature & less turn off time. All of the other statements are false.

QUESTION: 14

Which among the following devices is the most suited for high frequency applications?

Solution:

MOSFET has the least switching losses among the rest of the devices.

QUESTION: 15

Choose the correct statement

Solution:

MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.

QUESTION: 16

Consider an ideal MOSFET. If Vgs = 0V, then Id = ?

Solution:

Gate current = 0 so device is off (ideally).

QUESTION: 17

For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp

Solution:

Use Id = Idd x [1-Vgs/Vp]2.

QUESTION: 18

How does the MOSFET differ from the JFET?

Solution:
QUESTION: 19

The basic advantage of the CMOS technology is that

Solution:

Complementary MOS consumes very less power as compared to all the earlier devices.

QUESTION: 20

The N-channel MOSFET is considered better than the P-channel MOSFET due to its

Solution:

The N-channel are faster than the P-channel type.

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