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Test: Power Transistors


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20 Questions MCQ Test Power Electronics | Test: Power Transistors

Test: Power Transistors for Electrical Engineering (EE) 2023 is part of Power Electronics preparation. The Test: Power Transistors questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Power Transistors MCQs are made for Electrical Engineering (EE) 2023 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Power Transistors below.
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Test: Power Transistors - Question 1

Which of the following devices does not belong to the transistor family?

Detailed Solution for Test: Power Transistors - Question 1

GTO is gate turn off transistor, it belongs to the Thyristor family. All the other devices belong to the transistor family.

Test: Power Transistors - Question 2

 A power transistor is a

Detailed Solution for Test: Power Transistors - Question 2

 It has three layers p-n-p or n-p-n forming two p-n junctions.

Test: Power Transistors - Question 3

In a power transistor, ____ is the controlled parameter.

Detailed Solution for Test: Power Transistors - Question 3

The collector current is the controlled parameter.

Test: Power Transistors - Question 4

A power transistor is a _________ device.

Detailed Solution for Test: Power Transistors - Question 4

 Power transistor is simply many BJT’s connected in series parallel on a single silicon chip for power applications. It is a three terminal, bipolar, current controlled device.

Test: Power Transistors - Question 5

 In a power transistor, _________ is the controlling parameter.

Detailed Solution for Test: Power Transistors - Question 5

The base current controls the collector current. Hence, the base current Ib is the controlling parameter.

Test: Power Transistors - Question 6

In a power transistor, the IB vs VBE curve is

Detailed Solution for Test: Power Transistors - Question 6

The B-E junction of a BJT resembles a p-n junction diode, hence the curve.

Test: Power Transistors - Question 7

For a power transistor, if the base current IB is increased keeping VCE constant, then

Detailed Solution for Test: Power Transistors - Question 7

Ic is directly proportional to Ic.

Test: Power Transistors - Question 8

The forward current gain α is given by

Detailed Solution for Test: Power Transistors - Question 8

Collector current by emitter current is the current gain, its value is close to one but never greater than.

Test: Power Transistors - Question 9

The value of β is given by the expression

Detailed Solution for Test: Power Transistors - Question 9

Collector current by the base current is beta, its value is in the range 50 to 300.

Test: Power Transistors - Question 10

A power BJT is used as a power control switch by biasing it in the cut off region (off state) or in the saturation region (on state). In the on state

Detailed Solution for Test: Power Transistors - Question 10

When base-emitter & base-collector junctions are forward biased only than both the p-n junctions are forward biased and the device is on.

Test: Power Transistors - Question 11

 For a power transistor, if the forward current gain α = 0.97, then β = ?

Detailed Solution for Test: Power Transistors - Question 11

 Use the relation α = β/(β+1).

Test: Power Transistors - Question 12

The power electronics devices have a very high efficiency because

Detailed Solution for Test: Power Transistors - Question 12

They are efficient due to their higher transition speeds.

Test: Power Transistors - Question 13

For a power transistor, which of the following relations is true?

Detailed Solution for Test: Power Transistors - Question 13

 Practically speaking Ie = Ib+Ic. Ie is the highest as it is the sum of the collector and base currents. The base current is the smallest.

Test: Power Transistors - Question 14

High frequency operation of any device is limited by the

Detailed Solution for Test: Power Transistors - Question 14

Lower the switching losses higher the frequency of operation of the device.

Test: Power Transistors - Question 15

The instantaneous power loss during the delay time of a transistor is given by

Detailed Solution for Test: Power Transistors - Question 15

 During the delay time only the collector current flows & base to emitter voltage is zero.

Test: Power Transistors - Question 16

For a power transistor, the average power loss during the delay time can be given by the equation

Detailed Solution for Test: Power Transistors - Question 16

During the delay time only, the collector current flows & base to emitter voltage is zero. Hence the average power can be found, simply by integrating it over the total delay time & dividing by the base time period.

Test: Power Transistors - Question 17

A 1mv of i/p gives an output of 1V, the voltage gain as such would be

Detailed Solution for Test: Power Transistors - Question 17

1V/1mv = 1000.

Test: Power Transistors - Question 18

Which of the following relations is true for a BJT?

Detailed Solution for Test: Power Transistors - Question 18

The collector & emitter current differ only by the base current, which is very very small.

Test: Power Transistors - Question 19

Choose the correct statement

Detailed Solution for Test: Power Transistors - Question 19

Unlike the thyristor devices, all the transistor family devices remain in the conducting state as long as the firing pulses are applied. This is a very important property of the transistor devices.

Test: Power Transistors - Question 20

 Let’s say that a transistor is operating at the middle of the load line, then a decrease in the current gain would

Detailed Solution for Test: Power Transistors - Question 20

The current gain would decreases the collector current, shifting the Q point below.

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