Electrical Engineering (EE)
The completion time for multiplication time in baugh-wooley method is- a)n
- b)2n
- c)3n
- d)4n
Correct answer is option 'B'. Can you explain this answer?
The completion time for multiplication time in baugh-wooley method is
a)
n
b)
2n
c)
3n
d)
4n
Cstoppers Instructors answered • 53 minutes agoThe completion time for multiplication in Braun or Baugh-wooley is proportional to 2n where as completion time in Wallace tree method is proportional to log(base 2)(n).
The flux per pole in a synchronous motor with the field circuit ON and the stator disconnected from the supply is found to be 25 mWb. When the stator is connected to the rated supply with the field excitation unchanged, the flux per pole in the machine is found to be 20 mWb while the motor is running on no-load. Assuming no-load losses to be zero, the no-load current drawn by the motor from the supply- a)is zero
- b)lags the supply voltage
- c)is in phase with the supply voltage
- d)leads the supply voltage
Correct answer is option 'D'. Can you explain this answer?
The flux per pole in a synchronous motor with the field circuit ON and the stator disconnected from the supply is found to be 25 mWb. When the stator is connected to the rated supply with the field excitation unchanged, the flux per pole in the machine is found to be 20 mWb while the motor is running on no-load. Assuming no-load losses to be zero, the no-load current drawn by the motor from the supply
a)
is zero
b)
lags the supply voltage
c)
is in phase with the supply voltage
d)
leads the supply voltage
NANDAN SREERAMULU answered • 53 minutes agoSince after connecting the stator to supply, flux per pole is reduced to 20 mWb from initial value of 25 mWb, therefore effect of armature reaction is demagnetizing i.e. Ff > Fr Due to which motor is over-excited and runs at leading power factor.
KUMARI RENU asked • 22 minutes agoA highly sensitive galvanometer can detect a current as low as 0.1 nA. This galvanometer is used in a Wheatstone bridge as a detector as shown in figure below. The resistance of galvanometer is negligible.
Each arm of the bridge has a resistance of 1 kΩ and the input voltage applied to bridge is 20 V. Neglecting the resistance of the galvanometer as compared with the internal resistance of bridge, the smallest change in the resistance which can be detected is- a) 20 μΩ
- b)15 μΩ
- c)2 μΩ
- d)1 μΩ
Correct answer is option 'A'. Can you explain this answer?
A highly sensitive galvanometer can detect a current as low as 0.1 nA. This galvanometer is used in a Wheatstone bridge as a detector as shown in figure below. The resistance of galvanometer is negligible.
Each arm of the bridge has a resistance of 1 kΩ and the input voltage applied to bridge is 20 V. Neglecting the resistance of the galvanometer as compared with the internal resistance of bridge, the smallest change in the resistance which can be detected is
Each arm of the bridge has a resistance of 1 kΩ and the input voltage applied to bridge is 20 V. Neglecting the resistance of the galvanometer as compared with the internal resistance of bridge, the smallest change in the resistance which can be detected is
a)
20 μΩ
b)
15 μΩ
c)
2 μΩ
d)
1 μΩ
RTH = ?
- a)3 Ω
- b)12 Ω
- c)6 Ω
- d)∝
Correct answer is option 'C'. Can you explain this answer?
RTH = ?
a)
3 Ω
b)
12 Ω
c)
6 Ω
d)
∝
AYUSH GUPTA answered • 53 minutes agoAfter killing the source, RTH = 6 Ω
For a critical angle of 60 degree and the refractive index of the first medium is 1.732, the refractive index of the second medium is- a)1
- b)1.5
- c)2
- d)1.66
Correct answer is option 'B'. Can you explain this answer?
For a critical angle of 60 degree and the refractive index of the first medium is 1.732, the refractive index of the second medium is
a)
1
b)
1.5
c)
2
d)
1.66
PATEL VARUN answered • 53 minutes agoAnswer: b
Explanation: From the definition of Snell law, sin θc = n2/n1. To get n2, put n1 = 1.732 and θc = 60. Thus we get sin 60 = n2/1.732 and n2 = 1.5.
Explanation: From the definition of Snell law, sin θc = n2/n1. To get n2, put n1 = 1.732 and θc = 60. Thus we get sin 60 = n2/1.732 and n2 = 1.5.
A transistor with a = 0.9 and ICBO = 10 μA is biased so that IBQ = 90 μA. Then IEQ will be- a)5.15 mA
- b)5.2 mA
- c)5 mA
- d)990 mA
Correct answer is option 'D'. Can you explain this answer?
A transistor with
a
= 0.9 and ICBO = 10 μA is biased so that IBQ = 90 μA. Then IEQ will bea)
5.15 mA
b)
5.2 mA
c)
5 mA
d)
990 mA
ABHISHEK KUMAR answered • 54 minutes agoIEQ = ICQ + IBQ = 910 μA + 90 μA 
990 μA.
990 μA.
MEERA GOKUL asked • 38 minutes agoWhat is an electrical schedule?i. A list or a plan of a building providing information of number of points in each roomii. The list of all the electrical components required for a particular roomiii. The list all the electrical components along with their prices- a)Only i
- b)Only ii
- c)Both ii and iii
- d)None of these
Correct answer is option 'A'. Can you explain this answer?
What is an electrical schedule?
i. A list or a plan of a building providing information of number of points in each room
ii. The list of all the electrical components required for a particular room
iii. The list all the electrical components along with their prices
a)
Only i
b)
Only ii
c)
Both ii and iii
d)
None of these
Bronica Meena asked • 46 minutes agoA single-phase transformer when supplied from 220V, 50 Hz has eddy current loss of 50W. If the transformer is connected to a voltage of 330V, 50 Hz, the eddy current loss will be- a)168.75W
- b)112.5W
- c)75W
- d)50W
Correct answer is option 'B'. Can you explain this answer?
A single-phase transformer when supplied from 220V, 50 Hz has eddy current loss of 50W. If the transformer is connected to a voltage of 330V, 50 Hz, the eddy current loss will be
a)
168.75W
b)
112.5W
c)
75W
d)
50W
AYUSH GUPTA asked • 1 hour agoAssertion (A): Using a decoder could have advantages over using a multiplexer.
Reason (R): The decoder is more economical in cases where non-trivial, multiple-output expressions of the same input variables are required- a)Both A and R are true and R is the correct explanation of A.
- b)Both A and R are true but R is not the correct explanation of A.
- c)A is true but R is false!
- d)A is false but R is true.
Correct answer is option 'A'. Can you explain this answer?
Assertion (A): Using a decoder could have advantages over using a multiplexer.
Reason (R): The decoder is more economical in cases where non-trivial, multiple-output expressions of the same input variables are required
Reason (R): The decoder is more economical in cases where non-trivial, multiple-output expressions of the same input variables are required
a)
Both A and R are true and R is the correct explanation of A.
b)
Both A and R are true but R is not the correct explanation of A.
c)
A is true but R is false!
d)
A is false but R is true.
ROSHAN KUMAR asked • 1 hour agoAssertion (A): In design of circuit using BJT, a derating factor is used.Reason (R): As the ambient temperature increases, heat dissipation becomes slower.- a)Both A and R are true and R is correct explanation of A
- b)Both A and R are true but R is not a correct explanation of A
- c)A is true but R is false
- d)A is false but R is true
Correct answer is option 'A'. Can you explain this answer?
Assertion (A): In design of circuit using BJT, a derating factor is used.
Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
a)
Both A and R are true and R is correct explanation of A
b)
Both A and R are true but R is not a correct explanation of A
c)
A is true but R is false
d)
A is false but R is true
BHANU PRATAP asked • 1 hour agoWhich of the following isn’t true?- a)Both transformer and amplifier can provide voltage gain
- b)Both transformer and amplifier can provide current gain
- c)Both transformer and amplifier can provide power gain
- d)None of the mentioned
Correct answer is option 'C'. Can you explain this answer?
Which of the following isn’t true?
a)
Both transformer and amplifier can provide voltage gain
b)
Both transformer and amplifier can provide current gain
c)
Both transformer and amplifier can provide power gain
d)
None of the mentioned
Nishu Mahalwal asked • 2 hours agoConsider the following statements regarding a linear discrete-time system 
1. The system is stable.
2. The initial value h(0) of the impulse response is -4.
3. The steady-state output is zero for a sinusoidal discrete time input of frequency equal to one-fourth the sampling frequency.Which of these statements are correct?- a)1,2 and 3
- b)1 and 2
- c)1 and 3
- d)2 and 3
Correct answer is option 'C'. Can you explain this answer?
Consider the following statements regarding a linear discrete-time system
1. The system is stable.
2. The initial value h(0) of the impulse response is -4.
3. The steady-state output is zero for a sinusoidal discrete time input of frequency equal to one-fourth the sampling frequency.
2. The initial value h(0) of the impulse response is -4.
3. The steady-state output is zero for a sinusoidal discrete time input of frequency equal to one-fourth the sampling frequency.
Which of these statements are correct?
a)
1,2 and 3
b)
1 and 2
c)
1 and 3
d)
2 and 3
Shaik Abeedh asked • 3 hours agoConsider a piece of silicon (X) doped with both donor and acceptor impurities as:ND = 2 X 10^17/cm3 and NA = 10^17/cm3. Another piece of Silicon (Y) is doped with only donors ND = 10^17/cm3. Assume complete ionization of impurities. Which of the following statement is true. Electron concentration in sample X > sample Y Electron concentration in sample X < sample="" y="" electron="" concentration="" in="" sample="" x="" is="" approximately="" equal="" to="" sample="" y="" additional="" information="" is="" />
Tanya Satija asked • 3 hours agoConsider the following statements:
1. By increasing the rate of recombination and removal of minority carrier, reverse recovery period can be reduced.
2. In fast recovery diode, rate of recombination is decreased.
3. MOSFET and transistors are used in high power applications.
4. IGBT is having all the good properties of a transistors and MOSFET.Which of the statements given above are correct?- a)1 and 4
- b)1, 2, 3 and 4
- c)2 and 3
- d)1,2 and 3
Correct answer is option 'A'. Can you explain this answer?
Consider the following statements:
1. By increasing the rate of recombination and removal of minority carrier, reverse recovery period can be reduced.
2. In fast recovery diode, rate of recombination is decreased.
3. MOSFET and transistors are used in high power applications.
4. IGBT is having all the good properties of a transistors and MOSFET.
1. By increasing the rate of recombination and removal of minority carrier, reverse recovery period can be reduced.
2. In fast recovery diode, rate of recombination is decreased.
3. MOSFET and transistors are used in high power applications.
4. IGBT is having all the good properties of a transistors and MOSFET.
Which of the statements given above are correct?
a)
1 and 4
b)
1, 2, 3 and 4
c)
2 and 3
d)
1,2 and 3
Digvijay Kumar asked • 3 hours agoThe load currents in short-circuit calculation are neglected because
1. short-circuit currents are much larger than load currents.
2. short-circuit currents are greatly out of phase with load currents.
Which of these statement(s) is/are correct ?- a)neither 1 nor 2
- b)2 alone
- c)1 alone
- d)1 and 2
Correct answer is option 'C'. Can you explain this answer?
The load currents in short-circuit calculation are neglected because
1. short-circuit currents are much larger than load currents.
2. short-circuit currents are greatly out of phase with load currents.
Which of these statement(s) is/are correct ?
1. short-circuit currents are much larger than load currents.
2. short-circuit currents are greatly out of phase with load currents.
Which of these statement(s) is/are correct ?
a)
neither 1 nor 2
b)
2 alone
c)
1 alone
d)
1 and 2
K Ragini Rao asked • 3 hours ago In the forward bias condition, the resistance of point contact diode is_________- a)less than that of a general PN diode
- b)greater than that of a general PN diode
- c)equal to that of a general PN diode
- d)varies exponentially than that of a general PN diode
Correct answer is option 'A'. Can you explain this answer?
In the forward bias condition, the resistance of point contact diode is_________
a)
less than that of a general PN diode
b)
greater than that of a general PN diode
c)
equal to that of a general PN diode
d)
varies exponentially than that of a general PN diode
AKSHAY KUMAR asked • 3 hours agoA medium of relative permittivity εr2 = 2 forms an interface with free space. A point source of EM energy is located in the medium at a depth of 1 meter from the interface. Due to the total internal reflection, the transmitted beam has a circular cross-section over the interface. The area of the beam cross section at the interface is given by- a)2p m2
- b)p2 m2
- c)
m2 - d)p m2
Correct answer is option 'D'. Can you explain this answer?
A medium of relative permittivity εr2 = 2 forms an interface with free space. A point source of EM energy is located in the medium at a depth of 1 meter from the interface. Due to the total internal reflection, the transmitted beam has a circular cross-section over the interface. The area of the beam cross section at the interface is given by
a)
2
p
m2b)
p
2 m2c)
m2d)
p
m2 
SHUBHAM KUMAR asked • 3 hours agoThe n-well collector is formed by:- a)Lightly doped n-type epitaxial layer on p-Substrate
- b)Heavily doped n-type epitaxial layer on p-Substrate
- c)Lightly doped n-type diffused layer on p-Substrate
- d)Heavily doped n-type diffused layer on p-Substrate
Correct answer is option 'A'. Can you explain this answer?
The n-well collector is formed by:
a)
Lightly doped n-type epitaxial layer on p-Substrate
b)
Heavily doped n-type epitaxial layer on p-Substrate
c)
Lightly doped n-type diffused layer on p-Substrate
d)
Heavily doped n-type diffused layer on p-Substrate
KIRAN DEVI asked • 3 hours ago The technique used to quickly switch off a transistor is by_________- a)reverse biasing its emitter to collector junction
- b)reverse biasing its base to collector junction
- c)reverse biasing its base to emitter junction
- d)reverse biasing any junction
Correct answer is option 'C'. Can you explain this answer?
The technique used to quickly switch off a transistor is by_________
a)
reverse biasing its emitter to collector junction
b)
reverse biasing its base to collector junction
c)
reverse biasing its base to emitter junction
d)
reverse biasing any junction
Nishu Mahalwal asked • 4 hours agoMeasurement of hall coefficient enables the determination of- a)mobility of charge carriers
- b)type of conductivity and concentration of charge carriers
- c)temperature coefficient and concentration of charge carriers
- d)fermi level and forbidden energy gap
Correct answer is option 'B'. Can you explain this answer?
Measurement of hall coefficient enables the determination of
a)
mobility of charge carriers
b)
type of conductivity and concentration of charge carriers
c)
temperature coefficient and concentration of charge carriers
d)
fermi level and forbidden energy gap
Pinkesh Patel asked • 6 hours agoThe Voltage Source Inverter (VSI) shown in the figure below is switched to provide a 50Hz, square wave ac output voltage vo across an RL load. Reference polarity of vo and reference direction of the output current io are indicated in the figure. It is given that R = 3 ohms, L = 9.55mH.
Appropriate transition i.e., Zero Voltage Switching (ZVS) / Zero Current Switching (ZCS) of the IGBTs during turn-on / turn-off is- a)ZVS during turn off
- b)ZVS during turn-on
- c)ZCS during turn off
- d)ZCS during turn-on
Correct answer is option 'D'. Can you explain this answer?
The Voltage Source Inverter (VSI) shown in the figure below is switched to provide a 50Hz, square wave ac output voltage vo across an RL load. Reference polarity of vo and reference direction of the output current io are indicated in the figure. It is given that R = 3 ohms, L = 9.55mH.
Appropriate transition i.e., Zero Voltage Switching (ZVS) / Zero Current Switching (ZCS) of the IGBTs during turn-on / turn-off is
a)
ZVS during turn off
b)
ZVS during turn-on
c)
ZCS during turn off
d)
ZCS during turn-on
Aastha Wardwa asked • 6 hours agoA 3-phase wound rotor induction motor is controlled by a chopper-controlled resistance in its rotor circuit. A resistance of 2Ω is connected in the rotor circuit and a resistance of 4Ω is additionally connected during OFF periods of the chopper. The OFF period of the chopper is 4 ms. The average resistance in the rotor circuit for the chopper frequency of 200 Hz is - a)26/5Ω
- b)24/5Ω
- c)18/5Ω
- d)16/5Ω
Correct answer is option 'A'. Can you explain this answer?
A 3-phase wound rotor induction motor is controlled by a chopper-controlled resistance in its rotor circuit. A resistance of 2Ω is connected in the rotor circuit and a resistance of 4Ω is additionally connected during OFF periods of the chopper. The OFF period of the chopper is 4 ms. The average resistance in the rotor circuit for the chopper frequency of 200 Hz is
a)
26/5Ω
b)
24/5Ω
c)
18/5Ω
d)
16/5Ω
MAYANK AGGARWAL asked • 7 hours agoAn N-channe! JFET has IDSS = 8 mA and Vp = -5 V. The minimum values of VDS for pinch- off region and the drain current IDS for VGS= - 2V in the pinch-off region are respectively.- a)2 V and 1.8 mA
- b)3 V and 2.9 mA
- c)2 V and 2.9 mA
- d)3 V and 1.8 mA
Correct answer is option 'B'. Can you explain this answer?
An N-channe! JFET has IDSS = 8 mA and Vp = -5 V. The minimum values of VDS for pinch- off region and the drain current IDS for VGS= - 2V in the pinch-off region are respectively.
a)
2 V and 1.8 mA
b)
3 V and 2.9 mA
c)
2 V and 2.9 mA
d)
3 V and 1.8 mA
Manoj Pawar asked • 8 hours agoIn the optimum generator scheduling different power plants, the minimum fuel cost is obtained when- a)only the incremental fuel cost of each plant is the same
- b)the penalty factor of each plant is the same
- c)the ratio of the incremental fuel cost to the penalty factor of each plant is the same.
- d)the incremental fuel cost of each plant multiplied by its penalty factor is the same
Correct answer is option 'D'. Can you explain this answer?
In the optimum generator scheduling different power plants, the minimum fuel cost is obtained when
a)
only the incremental fuel cost of each plant is the same
b)
the penalty factor of each plant is the same
c)
the ratio of the incremental fuel cost to the penalty factor of each plant is the same.
d)
the incremental fuel cost of each plant multiplied by its penalty factor is the same
HIMANISH MUKHERJEE asked • 8 hours agoThe transfer matrix for the multi input-multi output (MIMO) system represented by the block diagram shown below is given by
Match List-I with List-II and select the correct answer using the codes given below the lists:
- a)a
- b)b
- c)c
- d)d
Correct answer is option 'B'. Can you explain this answer?
The transfer matrix for the multi input-multi output (MIMO) system represented by the block diagram shown below is given by
Match List-I with List-II and select the correct answer using the codes given below the lists:
Match List-I with List-II and select the correct answer using the codes given below the lists:
a)
a
b)
b
c)
c
d)
d
Balaji Suryawanshi asked • 8 hours ago If two induction motors A and B are identical except that the airgap of motor 'A' is 50% greater than that of motor 'B' then- a)the no-load power factor of A will be better than that of B.
- b)
the no-load power factor of A will be poorer than that of B. - c)the core losses of A will be more than those of B.
- d)the operating flux of A will be smaller than that of B.
Correct answer is option 'B'. Can you explain this answer?
If two induction motors A and B are identical except that the airgap of motor 'A' is 50% greater than that of motor 'B' then
a)
the no-load power factor of A will be better than that of B.
b)
the no-load power factor of A will be poorer than that of B.
c)
the core losses of A will be more than those of B.
d)
the operating flux of A will be smaller than that of B.
Kishan Pathak asked • 9 hours agoAs compared to full wave rectifier using two diodes, the four diode bridge rectifier has the dominant advantage of- a)higher current carrying capacity
- b)lower peak inverse voltage requirement
- c)lower ripple factor
- d)higher efficiency
Correct answer is option 'B'. Can you explain this answer?
As compared to full wave rectifier using two diodes, the four diode bridge rectifier has the dominant advantage of
a)
higher current carrying capacity
b)
lower peak inverse voltage requirement
c)
lower ripple factor
d)
higher efficiency
Harshit Ahir asked • 9 hours agoA 20 kVA, 2000/200V, 1-phase transformer has name-plate leakage impedance of 8%. Voltage required to be applied on the high-voltage side to circulate full-load current with the low-voltage winding short-circuited will be- a)16 V
- b)56.56 V
- c)160 V
- d)568.68 V
Correct answer is option 'C'. Can you explain this answer?
A 20 kVA, 2000/200V, 1-phase transformer has name-plate leakage impedance of 8%. Voltage required to be applied on the high-voltage side to circulate full-load current with the low-voltage winding short-circuited will be
a)
16 V
b)
56.56 V
c)
160 V
d)
568.68 V
SAURABH KUMAR asked • 9 hours ago Which of the following is true?- a)Monolithic IC amplifiers are directly coupled or dc amplifiers
- b)Televisions and radios use tuned amplifiers
- c)Audio amplifiers have coupling capacitor amplifier
- d)All of the mentioned
Correct answer is option 'D'. Can you explain this answer?
Which of the following is true?
a)
Monolithic IC amplifiers are directly coupled or dc amplifiers
b)
Televisions and radios use tuned amplifiers
c)
Audio amplifiers have coupling capacitor amplifier
d)
All of the mentioned
Yash Deep Singh asked • 9 hours agoAn incremental model of a solid state device is one which represents the- a)ac property of the device at desired operating point
- b)dc property of the device at all operating points
- c)complete ac and dc behaviour at all operating points
- d)ac property of the device at all operating points
Correct answer is option 'A'. Can you explain this answer?
An incremental model of a solid state device is one which represents the
a)
ac property of the device at desired operating point
b)
dc property of the device at all operating points
c)
complete ac and dc behaviour at all operating points
d)
ac property of the device at all operating points
Amit Parashar asked • 9 hours agoA 50 Hz, 11 kV, 3 phase alternator with earthed neutral having a reactance of 3 ohms per phase and is connected to a bus bar through a circuit breaker, if the distributed capacitance upto CB between the phase and neutral is 0.01 μ F.What is the peak re striking voltage?- a)18.36 kV
- b)17.96 kV
- c)15.96 kV
- d)12.65 kV
Correct answer is option 'B'. Can you explain this answer?
A 50 Hz, 11 kV, 3 phase alternator with earthed neutral having a reactance of 3 ohms per phase and is connected to a bus bar through a circuit breaker, if the distributed capacitance upto CB between the phase and neutral is 0.01 μ F.
What is the peak re striking voltage?
a)
18.36 kV
b)
17.96 kV
c)
15.96 kV
d)
12.65 kV
Fetching relevant content for you
Ask a question
Related Courses
Follow Us
