Electronics and Communication Engineering (EC) 2004 GATE Paper without solution

# Electronics and Communication Engineering (EC) 2004 GATE Paper without solution PDF Download

``` Page 1

GATE EC - 2004
Q.1 – Q.30 Carry One Mark Each
1. Consider the network graph shown in figure. Which one of the following is NOT a
‘tree’ of this graph?
(a) (b)
(c) (d)
2. The equivalent inductance measured between the terminals 1 and 2 for the
circuit shown in figure, is
(a)
1 2
L L M + + (b)
1 2
L L M + - (c)
1 2
2 L L M + + (d)
1 2
2 L L M + -
3. The circuit shown in Fig.Q.3, with R =
1 1
, , 3
3 4
L H C F W = = has input voltage
() sin2 . v t t = The resulting current i(t) is
(a)
( )
5sin 2 53.1
o
t +
(b)
( )
5sin 2 53.1
o
t -
(c)
( )
25sin 2 53.1
o
t +
(d)
( )
25sin 2 53.1
o
t -
L 1
L 2
1
M
2
C
L
R
i(t)
v(t)
Page 2

GATE EC - 2004
Q.1 – Q.30 Carry One Mark Each
1. Consider the network graph shown in figure. Which one of the following is NOT a
‘tree’ of this graph?
(a) (b)
(c) (d)
2. The equivalent inductance measured between the terminals 1 and 2 for the
circuit shown in figure, is
(a)
1 2
L L M + + (b)
1 2
L L M + - (c)
1 2
2 L L M + + (d)
1 2
2 L L M + -
3. The circuit shown in Fig.Q.3, with R =
1 1
, , 3
3 4
L H C F W = = has input voltage
() sin2 . v t t = The resulting current i(t) is
(a)
( )
5sin 2 53.1
o
t +
(b)
( )
5sin 2 53.1
o
t -
(c)
( )
25sin 2 53.1
o
t +
(d)
( )
25sin 2 53.1
o
t -
L 1
L 2
1
M
2
C
L
R
i(t)
v(t)
GATE EC - 2004

4. For the circuit shown in Fig.Q.4, the time constant RC = 1ms. The input voltage
is ( )
3
2 sin10 .
i
v t t = The output voltage ()
0
v t is equal to
(a)
( )
3
sin 10 45
o
t -
(b)
( )
3
sin 10 45
o
t +
(c)
( )
3
sin 10 53
o
t -
(d)
( )
3
sin 10 53
o
t +
5. For the R-L circuit shown in Fig.Q.5, the input voltage ( ) ().
i
v t u t = The current
i(t) is
(a) (b)
(c) (d)
6. The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
(a) Gallium (b) Indium (c) Boron (d) Phosphorus
C
R
V 1(t)
V 0(t)
1H
2O
i(t)
v i(t)
0.5
0.31
2 t(sec)
i(t)
1
0.63
1/2 t(sec)
i(t)
0.5
0.31
1/2 t(sec)
i(t)
1
0.63
2
t(sec)
i(t)
Page 3

GATE EC - 2004
Q.1 – Q.30 Carry One Mark Each
1. Consider the network graph shown in figure. Which one of the following is NOT a
‘tree’ of this graph?
(a) (b)
(c) (d)
2. The equivalent inductance measured between the terminals 1 and 2 for the
circuit shown in figure, is
(a)
1 2
L L M + + (b)
1 2
L L M + - (c)
1 2
2 L L M + + (d)
1 2
2 L L M + -
3. The circuit shown in Fig.Q.3, with R =
1 1
, , 3
3 4
L H C F W = = has input voltage
() sin2 . v t t = The resulting current i(t) is
(a)
( )
5sin 2 53.1
o
t +
(b)
( )
5sin 2 53.1
o
t -
(c)
( )
25sin 2 53.1
o
t +
(d)
( )
25sin 2 53.1
o
t -
L 1
L 2
1
M
2
C
L
R
i(t)
v(t)
GATE EC - 2004

4. For the circuit shown in Fig.Q.4, the time constant RC = 1ms. The input voltage
is ( )
3
2 sin10 .
i
v t t = The output voltage ()
0
v t is equal to
(a)
( )
3
sin 10 45
o
t -
(b)
( )
3
sin 10 45
o
t +
(c)
( )
3
sin 10 53
o
t -
(d)
( )
3
sin 10 53
o
t +
5. For the R-L circuit shown in Fig.Q.5, the input voltage ( ) ().
i
v t u t = The current
i(t) is
(a) (b)
(c) (d)
6. The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
(a) Gallium (b) Indium (c) Boron (d) Phosphorus
C
R
V 1(t)
V 0(t)
1H
2O
i(t)
v i(t)
0.5
0.31
2 t(sec)
i(t)
1
0.63
1/2 t(sec)
i(t)
0.5
0.31
1/2 t(sec)
i(t)
1
0.63
2
t(sec)
i(t)
GATE EC - 2004

7. If for a silicon n-p-n transistor, the base-to-emitter voltage (V
BE
) is 0.7V and the
collector-to-base voltage (V
CB
) is 0.2V, then the transistor is operating in the
(a) normal active mode (b) saturation mode
(c) inverse active mode (d) cutoff mode
8. Consider the following statements S
1
and S
2
.
S
1
: The ß of a bipolar transistor reduces if the base width is increased.
S
2
: The ß of a bipolar transistor increases if the doping concentration in the base
in increased
Which one of the following is correct?
(a) S
1
is FALSE and S
2
is TRUE (b) both S
1
and S
2
are TRUE
(c) both S
1
and S
2
are FALSE (d) S
1
is TRUE and S
2
is FALSE
9. An ideal op-amp is an ideal
(a) voltage controlled current source (b) voltage controlled voltage source
(c) current controlled current source (d) current controlled voltage source
10. Voltage series feedback (also called series shunt feedback) results in
(a) increase in both input and output impedances
(b) decrease in both input and output impedances
(c) increase in input impedance and decrease in output impedance
(d) decrease in input impedance and increase in output impedance
11. The circuit in Figure is a
(a) low-pass filter (b) high-pass filter
(c) band-pass filter (d) band-reject filter
R
+
-
C
V
out
R
C
V
in
Page 4

GATE EC - 2004
Q.1 – Q.30 Carry One Mark Each
1. Consider the network graph shown in figure. Which one of the following is NOT a
‘tree’ of this graph?
(a) (b)
(c) (d)
2. The equivalent inductance measured between the terminals 1 and 2 for the
circuit shown in figure, is
(a)
1 2
L L M + + (b)
1 2
L L M + - (c)
1 2
2 L L M + + (d)
1 2
2 L L M + -
3. The circuit shown in Fig.Q.3, with R =
1 1
, , 3
3 4
L H C F W = = has input voltage
() sin2 . v t t = The resulting current i(t) is
(a)
( )
5sin 2 53.1
o
t +
(b)
( )
5sin 2 53.1
o
t -
(c)
( )
25sin 2 53.1
o
t +
(d)
( )
25sin 2 53.1
o
t -
L 1
L 2
1
M
2
C
L
R
i(t)
v(t)
GATE EC - 2004

4. For the circuit shown in Fig.Q.4, the time constant RC = 1ms. The input voltage
is ( )
3
2 sin10 .
i
v t t = The output voltage ()
0
v t is equal to
(a)
( )
3
sin 10 45
o
t -
(b)
( )
3
sin 10 45
o
t +
(c)
( )
3
sin 10 53
o
t -
(d)
( )
3
sin 10 53
o
t +
5. For the R-L circuit shown in Fig.Q.5, the input voltage ( ) ().
i
v t u t = The current
i(t) is
(a) (b)
(c) (d)
6. The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
(a) Gallium (b) Indium (c) Boron (d) Phosphorus
C
R
V 1(t)
V 0(t)
1H
2O
i(t)
v i(t)
0.5
0.31
2 t(sec)
i(t)
1
0.63
1/2 t(sec)
i(t)
0.5
0.31
1/2 t(sec)
i(t)
1
0.63
2
t(sec)
i(t)
GATE EC - 2004

7. If for a silicon n-p-n transistor, the base-to-emitter voltage (V
BE
) is 0.7V and the
collector-to-base voltage (V
CB
) is 0.2V, then the transistor is operating in the
(a) normal active mode (b) saturation mode
(c) inverse active mode (d) cutoff mode
8. Consider the following statements S
1
and S
2
.
S
1
: The ß of a bipolar transistor reduces if the base width is increased.
S
2
: The ß of a bipolar transistor increases if the doping concentration in the base
in increased
Which one of the following is correct?
(a) S
1
is FALSE and S
2
is TRUE (b) both S
1
and S
2
are TRUE
(c) both S
1
and S
2
are FALSE (d) S
1
is TRUE and S
2
is FALSE
9. An ideal op-amp is an ideal
(a) voltage controlled current source (b) voltage controlled voltage source
(c) current controlled current source (d) current controlled voltage source
10. Voltage series feedback (also called series shunt feedback) results in
(a) increase in both input and output impedances
(b) decrease in both input and output impedances
(c) increase in input impedance and decrease in output impedance
(d) decrease in input impedance and increase in output impedance
11. The circuit in Figure is a
(a) low-pass filter (b) high-pass filter
(c) band-pass filter (d) band-reject filter
R
+
-
C
V
out
R
C
V
in
GATE EC - 2004

12. Assuming V
Cesat
=0.2V and ß = 50, the minimum base current (I
B
) required to
drive the transistor in Fig.Q.12 to saturation is
(a) 56 µA
(b) 140 mA
(c) 60 µA
(d) 3 mA
13. A master slave flip-flop has the characteristic that
(a) change in the input immediately reflected in the output
(b) change in the output occurs when the state of the master is affected
(c) change in the output occurs when the state of the slave is affected
(d) both the master and the slave states are affected at the same time
14. The range of signed decimal numbers that can be represented by 6-bite 1’s
complement number is
(a) -31 to +31 (b) -63 to +64 (c) -64 to +63 (d) -32 to +31
15. A digital system is required to amplify a binary-encoded audio signal. The user
should be able to control the gain of the amplifier from a minimum to a maximum
in 100 increments. The minimum number of bits required to encode, in straight
binary is
(a) 8 (b) 6 (c) 5 (d) 7
16. Choose the correct one from among the alternatives A,B,C,D after matching an
item from Group 1 with the most appropriate item in Group 2.
Group 1 Group 2
P. Shift register 1. Frequency division
Q. Counter 2. Addressing in memory chips
R. Decoder 3. Serial to parallel data conversion
(a) P – 3  Q – 2  R - 1  (b) P – 3  Q – 1  R - 2
(c) P – 2  Q – 1  R – 3 (d) P – 1  Q – 2  R - 2
I C
1kO
3V
I B
Page 5

GATE EC - 2004
Q.1 – Q.30 Carry One Mark Each
1. Consider the network graph shown in figure. Which one of the following is NOT a
‘tree’ of this graph?
(a) (b)
(c) (d)
2. The equivalent inductance measured between the terminals 1 and 2 for the
circuit shown in figure, is
(a)
1 2
L L M + + (b)
1 2
L L M + - (c)
1 2
2 L L M + + (d)
1 2
2 L L M + -
3. The circuit shown in Fig.Q.3, with R =
1 1
, , 3
3 4
L H C F W = = has input voltage
() sin2 . v t t = The resulting current i(t) is
(a)
( )
5sin 2 53.1
o
t +
(b)
( )
5sin 2 53.1
o
t -
(c)
( )
25sin 2 53.1
o
t +
(d)
( )
25sin 2 53.1
o
t -
L 1
L 2
1
M
2
C
L
R
i(t)
v(t)
GATE EC - 2004

4. For the circuit shown in Fig.Q.4, the time constant RC = 1ms. The input voltage
is ( )
3
2 sin10 .
i
v t t = The output voltage ()
0
v t is equal to
(a)
( )
3
sin 10 45
o
t -
(b)
( )
3
sin 10 45
o
t +
(c)
( )
3
sin 10 53
o
t -
(d)
( )
3
sin 10 53
o
t +
5. For the R-L circuit shown in Fig.Q.5, the input voltage ( ) ().
i
v t u t = The current
i(t) is
(a) (b)
(c) (d)
6. The impurity commonly used for realizing the base region of a silicon n-p-n
transistor is
(a) Gallium (b) Indium (c) Boron (d) Phosphorus
C
R
V 1(t)
V 0(t)
1H
2O
i(t)
v i(t)
0.5
0.31
2 t(sec)
i(t)
1
0.63
1/2 t(sec)
i(t)
0.5
0.31
1/2 t(sec)
i(t)
1
0.63
2
t(sec)
i(t)
GATE EC - 2004

7. If for a silicon n-p-n transistor, the base-to-emitter voltage (V
BE
) is 0.7V and the
collector-to-base voltage (V
CB
) is 0.2V, then the transistor is operating in the
(a) normal active mode (b) saturation mode
(c) inverse active mode (d) cutoff mode
8. Consider the following statements S
1
and S
2
.
S
1
: The ß of a bipolar transistor reduces if the base width is increased.
S
2
: The ß of a bipolar transistor increases if the doping concentration in the base
in increased
Which one of the following is correct?
(a) S
1
is FALSE and S
2
is TRUE (b) both S
1
and S
2
are TRUE
(c) both S
1
and S
2
are FALSE (d) S
1
is TRUE and S
2
is FALSE
9. An ideal op-amp is an ideal
(a) voltage controlled current source (b) voltage controlled voltage source
(c) current controlled current source (d) current controlled voltage source
10. Voltage series feedback (also called series shunt feedback) results in
(a) increase in both input and output impedances
(b) decrease in both input and output impedances
(c) increase in input impedance and decrease in output impedance
(d) decrease in input impedance and increase in output impedance
11. The circuit in Figure is a
(a) low-pass filter (b) high-pass filter
(c) band-pass filter (d) band-reject filter
R
+
-
C
V
out
R
C
V
in
GATE EC - 2004

12. Assuming V
Cesat
=0.2V and ß = 50, the minimum base current (I
B
) required to
drive the transistor in Fig.Q.12 to saturation is
(a) 56 µA
(b) 140 mA
(c) 60 µA
(d) 3 mA
13. A master slave flip-flop has the characteristic that
(a) change in the input immediately reflected in the output
(b) change in the output occurs when the state of the master is affected
(c) change in the output occurs when the state of the slave is affected
(d) both the master and the slave states are affected at the same time
14. The range of signed decimal numbers that can be represented by 6-bite 1’s
complement number is
(a) -31 to +31 (b) -63 to +64 (c) -64 to +63 (d) -32 to +31
15. A digital system is required to amplify a binary-encoded audio signal. The user
should be able to control the gain of the amplifier from a minimum to a maximum
in 100 increments. The minimum number of bits required to encode, in straight
binary is
(a) 8 (b) 6 (c) 5 (d) 7
16. Choose the correct one from among the alternatives A,B,C,D after matching an
item from Group 1 with the most appropriate item in Group 2.
Group 1 Group 2
P. Shift register 1. Frequency division
Q. Counter 2. Addressing in memory chips
R. Decoder 3. Serial to parallel data conversion
(a) P – 3  Q – 2  R - 1  (b) P – 3  Q – 1  R - 2
(c) P – 2  Q – 1  R – 3 (d) P – 1  Q – 2  R - 2
I C
1kO
3V
I B
GATE EC - 2004

1.0
0.55
0.25
F
x
(x)
-2 0 1 3
x
17. Figure shows the internal schematic of a TTL AND-OR-Invert (AOI) gate. For the
inputs shown in Figure, the output Y is
(a) 0
(b) 1
(c) AB
(d) AB
18. Figure is the voltage transfer characteristic of
(a) an NMOS inverter with enhancement mode
(b) an NMOS inverter with depletion mode transistor
(c) A CMOS inverter
(d) A BJT inverter
19. The impulse response h[n] of a linear time-invariant system is given by
[ ] [ ] [ ] [ ] 3 2 2 7 h n u n u n u n = + + - - -
where u[n] is the unit step sequence. The above system is
(a) stable but not causal (b) stable and causal
(c) causal but unstable (d) unstable and not causal
20. The distribution function ( )
x
f x of a random variable X is shown in Fig.Q.20. the
probability that X = 1 is
(a) zero (b) 0.25 (c) 0.55 (d) 0.30
A
B
Y
Inputs are
floating
0
V in
V out
```

## FAQs on Electronics and Communication Engineering (EC) 2004 GATE Paper without solution

 1. What is Electronics and Communication Engineering?
Ans. Electronics and Communication Engineering (EC) is a field of engineering that focuses on the design, development, and application of electronic devices, systems, and communication technologies. It involves the study of subjects such as electronic circuits, digital systems, communication systems, signal processing, and networking.
 2. What is the significance of Electronics and Communication Engineering in today's world?
Ans. Electronics and Communication Engineering plays a crucial role in today's world as it is the backbone of modern technology and communication systems. It enables the development of advanced electronic devices, telecommunications networks, wireless communication systems, satellite systems, and various other technologies that are integral to our daily lives.
 3. What are the career prospects for Electronics and Communication Engineering graduates?
Ans. Electronics and Communication Engineering graduates have a wide range of career opportunities in various industries. They can work in sectors such as telecommunications, information technology, electronics manufacturing, research and development, aerospace, defense, and government organizations. Job roles may include electronics engineer, communication engineer, network engineer, system analyst, research scientist, and project manager.
 4. How can one prepare for the GATE exam in Electronics and Communication Engineering?
Ans. To prepare for the GATE exam in Electronics and Communication Engineering, one should start by understanding the exam pattern and syllabus. It is essential to study the core subjects thoroughly, revise the fundamental concepts, and solve previous year question papers. Joining a reputable coaching institute or online platform for guidance and taking mock tests can also be beneficial in improving time management and identifying areas that need further study.
 5. What are some popular postgraduate programs available after completing Electronics and Communication Engineering?
Ans. After completing Electronics and Communication Engineering, one can pursue various postgraduate programs that offer specialization in specific areas. Some popular choices include Master of Technology (M.Tech) in Communication Systems, VLSI Design, Signal Processing, Embedded Systems, and Wireless Communication. Additionally, one can also pursue an MBA or research-based programs like a Ph.D. in Electronics and Communication Engineering.
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