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Snubber circuits are used with thyristors to:
- a)See that SCR turns ON at a voltage much less than its forward break over voltage
- b)To protect the gate circuit
- c)To limit the rate of rise of voltage dv/dt.
- d)To limit the rate of rise of current di/dt.
Correct answer is option 'C'. Can you explain this answer?
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Snubber circuits are used with thyristors to:a)See that SCR turns ON a...
dv/dt protection:
- When the SCR is forward biased, junctions J1 and J3 are forward biased and junction J2 is reverse biased. This reverse-biased junction J2 exhibits the characteristics of a capacitor.
- If the rate of the forward voltage applied is very high across the SCR, charging current flows through the junction J2 is high. This current is enough to turn ON the SCR even without any gate signal.
- This is called as dv/dt triggering of the SCR.
- dv/dt rating of thyristor indicates the maximum rate of rise of anode voltage that will not trigger the device without any gate signal. We use a snubber circuit to control this limit.
- A snubber circuit consists of a series combination of resistance Rs and capacitance Cs in parallel with the thyristor.
- False turn – ON of an SCR by large dv/dt, even without application of a gate signal can be prevented by using a snubber circuit.
- Snubber limits the dv/dt across the switching device during the turnoff of the device.
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Snubber circuits are used with thyristors to:a)See that SCR turns ON a...
Explanation:
Snubber circuits are used with thyristors to limit the rate of rise of voltage (dv/dt) across the thyristor during turn-off. This is crucial because a high rate of rise of voltage can cause voltage transients, also known as voltage spikes or ringing, which can damage the thyristor and other components in the circuit.
Importance of Limiting dv/dt:
The rate of rise of voltage (dv/dt) is directly proportional to the rate of rise of current (di/dt) through the inductance present in the circuit. When a thyristor turns off, the voltage across it rises rapidly. This rapid rise in voltage causes a high rate of rise of current, which can lead to high di/dt values. These high values of di/dt can result in voltage spikes and ringing, leading to potential damage to the thyristor.
Function of Snubber Circuits:
Snubber circuits are designed to limit the rate of change of voltage (dv/dt) across the thyristor during turn-off. They consist of a combination of resistors, capacitors, and/or inductors. The snubber circuit is connected in parallel with the thyristor.
When the thyristor turns off, the snubber circuit provides a discharge path for the energy stored in the inductance, limiting the rate of rise of voltage (dv/dt). The energy is dissipated in the snubber circuit components, preventing voltage spikes and ringing.
Types of Snubber Circuits:
There are two common types of snubber circuits used with thyristors:
1. RC Snubber Circuit: This type of snubber circuit consists of a resistor (R) and a capacitor (C) connected in parallel with the thyristor. The resistor limits the rate of rise of voltage, and the capacitor absorbs the energy stored in the inductance.
2. RCD Snubber Circuit: This type of snubber circuit consists of a resistor (R), a capacitor (C), and a diode (D) connected in parallel with the thyristor. The diode allows the energy stored in the inductance to be discharged more quickly, further reducing the rate of rise of voltage.
Conclusion:
Snubber circuits are used with thyristors to limit the rate of rise of voltage (dv/dt) during turn-off, preventing voltage spikes and ringing. This helps protect the thyristor and other components in the circuit from potential damage. The two common types of snubber circuits used are RC snubber circuits and RCD snubber circuits.
Snubber circuits are used with thyristors to limit the rate of rise of voltage (dv/dt) across the thyristor during turn-off. This is crucial because a high rate of rise of voltage can cause voltage transients, also known as voltage spikes or ringing, which can damage the thyristor and other components in the circuit.
Importance of Limiting dv/dt:
The rate of rise of voltage (dv/dt) is directly proportional to the rate of rise of current (di/dt) through the inductance present in the circuit. When a thyristor turns off, the voltage across it rises rapidly. This rapid rise in voltage causes a high rate of rise of current, which can lead to high di/dt values. These high values of di/dt can result in voltage spikes and ringing, leading to potential damage to the thyristor.
Function of Snubber Circuits:
Snubber circuits are designed to limit the rate of change of voltage (dv/dt) across the thyristor during turn-off. They consist of a combination of resistors, capacitors, and/or inductors. The snubber circuit is connected in parallel with the thyristor.
When the thyristor turns off, the snubber circuit provides a discharge path for the energy stored in the inductance, limiting the rate of rise of voltage (dv/dt). The energy is dissipated in the snubber circuit components, preventing voltage spikes and ringing.
Types of Snubber Circuits:
There are two common types of snubber circuits used with thyristors:
1. RC Snubber Circuit: This type of snubber circuit consists of a resistor (R) and a capacitor (C) connected in parallel with the thyristor. The resistor limits the rate of rise of voltage, and the capacitor absorbs the energy stored in the inductance.
2. RCD Snubber Circuit: This type of snubber circuit consists of a resistor (R), a capacitor (C), and a diode (D) connected in parallel with the thyristor. The diode allows the energy stored in the inductance to be discharged more quickly, further reducing the rate of rise of voltage.
Conclusion:
Snubber circuits are used with thyristors to limit the rate of rise of voltage (dv/dt) during turn-off, preventing voltage spikes and ringing. This helps protect the thyristor and other components in the circuit from potential damage. The two common types of snubber circuits used are RC snubber circuits and RCD snubber circuits.
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Snubber circuits are used with thyristors to:a)See that SCR turns ON at a voltage much less than its forward break over voltageb)To protect the gate circuitc)To limit the rate of rise of voltage dv/dt.d)To limit the rate of rise of current di/dt.Correct answer is option 'C'. Can you explain this answer?
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