For silicon the critical electric field at breakdown is approximately Ecrit  = 4 x 10V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n  - junction is
  • a)
    2 x 1016 cm-3
  • b)
    4 x 1016 cm-3
  • c)
    2 x 1018 cm-3
  • d)
    4 x 1018 cm-3
Correct answer is option 'A'. Can you explain this answer?

Can you answer this doubt?

People are searching for an answer to this question.
This discussion on For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? is done on EduRev Study Group by Electronics and Communication Engineering (ECE) Students. The Questions and Answers of For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? are solved by group of students and teacher of Electronics and Communication Engineering (ECE), which is also the largest student community of Electronics and Communication Engineering (ECE). If the answer is not available please wait for a while and a community member will probably answer this soon. You can study other questions, MCQs, videos and tests for Electronics and Communication Engineering (ECE) on EduRev and even discuss your questions like For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? over here on EduRev! Apart from being the largest Electronics and Communication Engineering (ECE) community, EduRev has the largest solved Question bank for Electronics and Communication Engineering (ECE).
This discussion on For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? is done on EduRev Study Group by Electronics and Communication Engineering (ECE) Students. The Questions and Answers of For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? are solved by group of students and teacher of Electronics and Communication Engineering (ECE), which is also the largest student community of Electronics and Communication Engineering (ECE). If the answer is not available please wait for a while and a community member will probably answer this soon. You can study other questions, MCQs, videos and tests for Electronics and Communication Engineering (ECE) on EduRev and even discuss your questions like For silicon the critical electric field at breakdown is approximately Ecrit= 4 x105V cm. For the breakdown voltage of 25 V, the maximum n - type doping concentration in an abrupt p+ n - junction isa)2 x 1016cm-3b)4 x 1016cm-3c)2 x 1018cm-3d)4 x 1018cm-3Correct answer is option 'A'. Can you explain this answer? over here on EduRev! Apart from being the largest Electronics and Communication Engineering (ECE) community, EduRev has the largest solved Question bank for Electronics and Communication Engineering (ECE).