Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Notes  >  Small Signals Modeling of BJT and Their Analysis (Part - 3)

Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE) PDF Download

h-Parameter Model vs. re Model 

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

  •  CB re vs. h-Parameter Model 

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Common-Base h-Parameters

 hib = re
hfb = -α ≌ -1

  • Small signal ac analysis includes determining the expressions for the following parameters in terms of Zi, Zo and AV in terms of – b

– re
– ro and – RB, RC

  •  Also, finding the phase relation between input and output
  • The values of β, ro are found in datasheet
  • The value of re must be determined in dc condition as re = 26mV / IE

 

Common Emitter Fixed bias configuration

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Removing DC effects of VCC and Capacitors

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

re model

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Small signal analysis – fixed bias Input impedance Zi: From the above re model, is,
Zi = [RB || βre] ohms
If RB > 10 βre, then,
[RB || βre] ≌ βre
Then,
Zi ≌ βre

Ouput impedance Zoi: Zo is the output impedance when Vi = 0. When V= 0, ib = 0, resulting in open circuit equivalence for the current source.

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Zo = [RC|| ro ] ohms

Voltage Gain Av:
Vo = - βIb( RC || ro)
From the re model, Ib = Vi / βre
thus, Vo = - β (V/ β re) ( RC || ro)
AV = Vo / Vi = - ( RC || ro) / re

If ro >10RC, AV = - ( RC / re)

Phase Shift: The negative sign in the gain expression indicates that there exists 180phase shift between the input and output.

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Problem: 

Common Emitter - Voltage-Divider Configuration

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Equivalent Circuit:

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

The re model is very similar to the fixed bias circuit except for RB is R1|| R 2 in the case of voltage divider bias.

Expression for AV remains the same.

Zi = R1 || R2 || β re

Zo = RC
:
Voltage Gain, AV:

From the re model,
Ib = Vi / β re
Vo = - Io ( RC || ro),
Io = β Ib
thus, Vo = -β (Vi / β re) ( RC || ro)
AV = V/ Vi = - ( RC || ro) / re
If ro >10RC,
AV = - ( RC / re)

 

Problem: Given: β = 210, ro = 50kΩ.
Determine: re, Zi, Zo, AV. For the network given:

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE) 

To perform DC analysis, we need to find out whether to choose exact analysis or approximate analysis.

This is done by checking whether βR> 10R2, if so, approximate analysis can be chosen.

Here, βRE = (210)(0.68k) = 142.8kΩ.

10R= (10)(10k) = 100k.

Thus, βRE > 10R2.

Therefore using approximate analysis, VB = VccR2 / (R1+R2)

= (16)(10k) / (90k+10k) = 1.6V

V= VB – 0.7 = 1.6 – 0.7 = 0.9V 

IE = VE / RE = 1.324mA

re = 26mV / 1.324mA = 19.64Ω

Effect of ro can be neglected if ro ≥ 10( RC). In the given circuit, 10RC is 22k, ro is 50K.

Thus effect of ro can be neglected.

Zi = ( R1||R2||βRE)

= [90k||10k||(210)(0.68k)]

= 8.47kΩ Zo = RC = 2.2 kΩ

 AV = - R/ RE = - 3.24

If the same circuit is with emitter resistor bypassed, Then value of re remains same.

Zi = ( R1||R2||βre) = 2.83 kΩ

Zo = RC = 2.2 kΩ

AV = - RC / re = - 112.02

Common Emitter Un bypassed Emitter - Fixed Bias Configuration

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

 Equivalent Circuit:

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Applying KVL to the input side:

Vi = Ibβre + IeRE
Vi = Ibβre +(β +1) IbRE

 Input impedance looking into the network to the right of RB is
Z= Vi / Ib = βre+ (β +1)RE

Sinceβ>>1,   (β +1) = β
Thus, Zb = Vi / I= β (re+RE)

Since RE is often much greater than re, Zb

= βRE, Zi
= RB||Zb

Zo is determined by setting Vi to zero, Ib = 0 and bIb can be replaced by open circuit equivalent. The
result is, We             Zo = R
know that                   Vo = - IoRC

= - bIβRC
= - β(Vi/Zb)RC
AV = Vo / Vi = -β(RC/Zb)
Z= β(re + RE)
AV = Vo / Vi = - β[RC /(re + RE)]
AV = Vo / Vi = - β[RC /RE]

Phase relation: The negative sign in the gain equation reveals a 180 o phase shift 
between input and output.

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)  Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

 Problem:

 Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Given: β = 120, ro = 40kΩ . Determine: re, Zi, Zo, AV.

To find re, it is required to perform DC analysis and find IE as re = 26mV / IE To find IE, it is required to find IB.
We know that,

IB = (VCC – VBE) / [RB + (β+1)RE]

IB = (20 – 0.7) / [470k + (120+1)0.56k] = 35.89μA

IE = (β+1)IB = 4.34mA
re = 26mV / IE = 5.99Ω

Effect of ro can be neglected,  if ro ≥ 10( RC + RE)

10( RC + RE) = 10( 2.2 kΩ + 0.56k) = 27.6 kΩ

and given that ro is 40 kΩ , thus effect of ro can be ignored.

Z i = RB|| [β ( re + RE)] = 470k || [120 ( 5.99 + 560 )] = 59.34Ω

Zo = RC = 2.2 kΩ

AV = - βRC / [β ( re + RE)] = - 3.89

Analyzing the above circuit with Emitter resistor bypassed i.e.,

Common Emitter Iβ = (VCC – VBE) / [RB + (β+1)RE]

IB = (20 – 0.7) / [470k + (120+1)0.56k] = 35.89mA

IE = (β+1)IB = 4.34mA

re = 26mV / IE = 5.99Ω

Z= RB|| [βre] = 717.70Ω

Zo = RC = 2.2 kΩ

A= - RC / re = - 367.28  ( a significant increase)

Emitter – follower

Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

re model

Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

Z= RB || Zb
Zb = βre+ (β +1)RE
Zb = β(re+ RE)

Since RE is often much greater than re, Zb = βRE

To find Zo, it is required to find output equivalent circuit of the emitter follower at its input terminal.

This can be done by writing the equation for the current Ib. Ib = Vi / Zb
Ie = (β +1)Ib
= (β +1) (Vi / Zb)

We know that,

Zb = βre+ (β +1)RE 
substituting this in the equation for Ie we get, Ie = (β +1) (Vi / Zb) = (β +1) (Vi / βre+ (β +1)RE )

dividing by (β +1), we get,

Ie = Vi / [βre/ (β +1)] + RE

Since (β +1) = β,

Ie = Vi / [re+ RE]

Using the equation Ie = Vi / [re+ RE], we can write the output equivalent circuit as,

Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

As per the equivalent circuit,
Z= RE||re
Since RE is typically much greater than re,
Zo ≌ re

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FAQs on Small Signals Modeling of BJT and Their Analysis (Part - 3) - Electrical Engineering (EE)

1. What is small signal modeling of BJT?
Ans. Small signal modeling of BJT refers to the process of representing the behavior of a bipolar junction transistor (BJT) using small variations or signals around its operating point. This modeling technique is used to analyze the transistor's response to small perturbations and is essential for designing amplifiers and other electronic circuits.
2. How is small signal modeling different from large signal modeling?
Ans. Small signal modeling focuses on analyzing the linear behavior of a BJT around its operating point, while large signal modeling considers the transistor's behavior under large variations of input signals that can cause the transistor to operate in non-linear regions. Small signal modeling is useful for analyzing signal amplification and frequency response, while large signal modeling is necessary for analyzing distortion and power handling capabilities.
3. What are the key components of a small signal model for a BJT?
Ans. The key components of a small signal model for a BJT include the transconductance (gm), the output conductance (go), the input resistance (ri), the output resistance (ro), and the current gain (hfe or β). These parameters represent the small-signal behavior of the BJT and are used to analyze its amplification properties and frequency response.
4. How are the small signal parameters of a BJT determined?
Ans. The small signal parameters of a BJT can be determined through various methods, including experimental measurements and mathematical modeling. One common approach is to measure the transistor's characteristics using a test setup and extract the small signal parameters from the measured data. Alternatively, mathematical models based on the physical structure and characteristics of the transistor can be used to determine the small signal parameters.
5. What are the applications of small signal modeling in electronic circuits?
Ans. Small signal modeling is widely used in the design and analysis of electronic circuits, particularly in amplifiers. It helps in understanding the gain, frequency response, and stability of the amplifiers. Small signal models are also used in the design of oscillators, filters, and other circuits where the linear behavior of the transistor is crucial. Additionally, small signal modeling is essential for analyzing and optimizing the performance of integrated circuits that utilize BJTs.
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