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Electronics and Communication Engineering (ECE) Exam  >  Electronics and Communication Engineering (ECE) Test  >  Topicwise Question Bank for Electronics Engineering  >  Test: MOSFET - Electronics and Communication Engineering (ECE) MCQ

MOSFET - Free MCQ Practice Test with solutions, GATE ECE Engineering (ECE)


MCQ Practice Test & Solutions: Test: MOSFET (20 Questions)

You can prepare effectively for Electronics and Communication Engineering (ECE) Topicwise Question Bank for Electronics Engineering with this dedicated MCQ Practice Test (available with solutions) on the important topic of "Test: MOSFET". These 20 questions have been designed by the experts with the latest curriculum of Electronics and Communication Engineering (ECE) 2026, to help you master the concept.

Test Highlights:

  • - Format: Multiple Choice Questions (MCQ)
  • - Duration: 20 minutes
  • - Number of Questions: 20

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Test: MOSFET - Question 1
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The MOSFET combines the areas of _______ & _________

Detailed Solution: Question 1

 It is an enhancement of the FET devices (field effect) using MOS technology.

Test: MOSFET - Question 2
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Which of the following terminals does not belong to the MOSFET?

Detailed Solution: Question 2

MOSFET is a three terminal device D, G & S.

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Test: MOSFET - Question 3
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Choose the correct statement

Detailed Solution: Question 3

It is a voltage controlled device.

Test: MOSFET - Question 4
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Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT

Detailed Solution: Question 4

MOSFET requires gate signals with lower amplitude as compared to BJTs & has lower switching losses.

Test: MOSFET - Question 5
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Choose the correct statement

Detailed Solution: Question 5

MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled unlike the BJT & only electron current flows.

Test: MOSFET - Question 6
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The arrow on the symbol of MOSFET indicates

Detailed Solution: Question 6

The arrow is to indicate the direction of electrons (opposite to the direction of conventional current flow).

Test: MOSFET - Question 7
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The controlling parameter in MOSFET is

Detailed Solution: Question 7

Correct Answer :- b

Explanation : The gate to source voltage is the controlling parameter in a MOSFET.

Test: MOSFET - Question 8
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In the internal structure of a MOSFET, a parasitic BJT exists between the

Detailed Solution: Question 8

Examine the internal structure of a MOSFET, notice the n-p-n structure between the drain & source. A p-channel MOSFET will have a p-n-p structure.

Test: MOSFET - Question 9
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 In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the

Detailed Solution: Question 9

It is the minimum voltage to induce a n-channel/p-channel which will allow the device to conduct electrically through its length.

Test: MOSFET - Question 10
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The output characteristics of a MOSFET, is a plot of

Detailed Solution: Question 10

 It is Id vs Vds which are plotted for different values of Vgs (gate to source voltage).

Test: MOSFET - Question 11
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In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is

Detailed Solution: Question 11

 The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.

Test: MOSFET - Question 12
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At turn-on the initial delay or turn on delay is the time required for the

Detailed Solution: Question 12

 It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.

Test: MOSFET - Question 13
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 Choose the correct statement

Detailed Solution: Question 13

MOSFET has lower switching losses due to its unipolar nature & less turn off time. All of the other statements are false.

Test: MOSFET - Question 14
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Which among the following devices is the most suited for high frequency applications?

Detailed Solution: Question 14

MOSFET has the least switching losses among the rest of the devices.

Test: MOSFET - Question 15
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Choose the correct statement

Detailed Solution: Question 15

MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.

Test: MOSFET - Question 16
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Consider an ideal MOSFET. If Vgs = 0V, then Id = ?

Detailed Solution: Question 16

Gate current = 0 so device is off (ideally).

Test: MOSFET - Question 17
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 For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp

Detailed Solution: Question 17

Use Id = Idd x [1-Vgs/Vp]2.

Test: MOSFET - Question 18
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How does the MOSFET differ from the JFET?

Test: MOSFET - Question 19
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The basic advantage of the CMOS technology is that

Detailed Solution: Question 19

 Complementary MOS consumes very less power as compared to all the earlier devices.

Test: MOSFET - Question 20
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The N-channel MOSFET is considered better than the P-channel MOSFET due to its

Detailed Solution: Question 20

The N-channel are faster than the P-channel type.

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About this Electronics and Communication Engineering (ECE) Practice Test

This test contains 20 MCQs on MOSFET with detailed solutions for each question. It is part of the Topicwise Question Bank for Electronics Engineering course on EduRev, designed to align with the current Electronics and Communication Engineering (ECE) syllabus. Each solution explains not just the correct answer but also gives you an understanding of the topic — not just to attempt the question but also help you prepare for the exam with practice.

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If you found this MOSFET MCQ Test helpful, you can further enhance your Electronics and Communication Engineering (ECE) preparation with in-depth courses on EduRev, for all the subjects and topics available in Topicwise Question Bank for Electronics Engineering course. The course offers:
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