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Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Tests  >  Test: GTOs - Electrical Engineering (EE) MCQ

Test: GTOs - Electrical Engineering (EE) MCQ


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10 Questions MCQ Test - Test: GTOs

Test: GTOs for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: GTOs questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: GTOs MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: GTOs below.
Solutions of Test: GTOs questions in English are available as part of our course for Electrical Engineering (EE) & Test: GTOs solutions in Hindi for Electrical Engineering (EE) course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: GTOs | 10 questions in 10 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study for Electrical Engineering (EE) Exam | Download free PDF with solutions
Test: GTOs - Question 1
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The GTO (gate turn-off thyristor) is a

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Just like a SCR, the GTO is a four layer p-n-p-n device.

Test: GTOs - Question 2
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The GTO can be turned off

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The GTO can be turned off by applying a negative gate pulse to the gate terminal.

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Test: GTOs - Question 3
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 The anode current is ideally limited by the

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The SCR or any device is connected through the load, hence the magnitude of the anode current (same as load current) will depend on the supply voltage and load impedance.

Test: GTOs - Question 4
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In a GTO the n+ layer forms the
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The bottom n+ layer forms the cathode.

Test: GTOs - Question 5
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The turn-off gain βoff of the GTO is given by
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 βoff = (anode current/gate current).

Test: GTOs - Question 6
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A GTO can be represented by two transistors T1 & T2. The current gain of both transistors are α1 and α2 respectively. A low value of gate current requires
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 In order that the gate current for turning-off the device is low, α2 should be made as nearer to unity as possible whereas α1 should be small.

Test: GTOs - Question 7
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Gold doped GTOs have _____________ as compared to the conventional GTOs
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Gold doping reduces the negative gate current requirements, different kinds of dopings have different advantages over the others.

Test: GTOs - Question 8
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 Latching current for the GTOs is ________ as compared to CTs (Conventional thyristors).
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Latching current of GTOs is 2-4A as compared to 200 to 400 mA in case of CT’s.

Test: GTOs - Question 9
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In case of the two-transistor model (T1 & T2) of GTO with anode-short, the anode-short is placed between the
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Draw the model. The anode-short resistor is connected between emitter (Anode A of GTO) with base of T1 transistor.

Test: GTOs - Question 10
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Choose the correct statement:GTOs have _________ as compared to the CTs.
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GTOs have less turn-on and turn-off time, making it efficient for high frequency applications.

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Important Questions for GTOs

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GTOs MCQs with Answers

Prepare for the GTOs within the Electrical Engineering (EE) exam with comprehensive MCQs and answers at EduRev. Our platform offers a wide range of practice papers, question papers, and mock tests to familiarize you with the exam pattern and syllabus. Access the best books, study materials, and notes curated by toppers to enhance your preparation. Stay updated with the exam date and receive expert preparation tips and paper analysis. Visit EduRev's official website today and access a wealth of videos and coaching resources to excel in your exam.

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