Test: BiCMOS Logic Gates - Electrical Engineering (EE) MCQ

Switching speed is more compared to CMOS

Sensitivity is less with respect to load capacitance

High current drive capability

All of the mentioned

BJT

MOSFET

Both BJT and MOSFETs

JFET

NMOS in saturation mode

PMOS in saturation mode

CMOS

BJT

Only Npn BJT

Only Pnp BJT

Both npn and pnp BJT

Multi emitter npn BJT

Sensitivity is less load capacitance

Bipolar transistors are used for driving current to the load capacitance but not for the logic operations

Increased fabrication Complexity

All of the mentioned

Same substrate of nMOS

N-well in p Substrate

P-well in n Substrate

Same substrate of pMOS

Substrate

Collector

Emitter

None of the mentioned

Lightly doped n-type epitaxial layer on p-Substrate

Heavily doped n-type epitaxial layer on p-Substrate

Lightly doped n-type diffused layer on p-Substrate

Heavily doped n-type diffused layer on p-Substrate

It creates a depletion region at the contact surface

It creates a low conductivity path between collector region and contact

It reduces a contact resistance

It can withstand high voltages as compared to collector region

A = Collector, B = Base, C = Source, D = Drain

A = Emitter, B = Base, C = Drain, D = Source

A = Emitter, B = Collector, C = Source, D = Drain

A = Collector, B = Emitter , C = Drain, D = Source

Current controlled Voltage source

Voltage controlled Current source

Current controlled current source

Voltage controlled current source

RC Model

Emitter resister model

Ebers Moll Model

Hybrid model

None of the mentioned

None of the mentioned