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Test: MOS Circuits Area Capacitance And Delay Unit - Electrical Engineering (EE) MCQ


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15 Questions MCQ Test - Test: MOS Circuits Area Capacitance And Delay Unit

Test: MOS Circuits Area Capacitance And Delay Unit for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: MOS Circuits Area Capacitance And Delay Unit questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: MOS Circuits Area Capacitance And Delay Unit MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: MOS Circuits Area Capacitance And Delay Unit below.
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Test: MOS Circuits Area Capacitance And Delay Unit - Question 1

Which of the following mainly constitutes the output node capacitance:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 1

Output node capacitance mainly consists of junction parasitic capacitance.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 2

The junction parasitic capacitance are produced due to:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 2

The junction parasitic capacitance are produced due to drain diffusion capacitance.

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Test: MOS Circuits Area Capacitance And Delay Unit - Question 3

The amount of parasitic capacitance at the output node is determined by:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 3

The amount of parasitic capacitance is a linear function of drain diffusion area.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 4

The dominant component of the total output capacitance in submicron technology is:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 4

Interconnect capacitance becomes dominant component in submicron technology.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 5

Which of the following is dominant component in input capacitance?

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 5

For input capacitance, gate oxide capacitance is the main component.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 6

The total load capacitance is calculated as the sum of:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 6

Total load capacitance = Drain capacitance + interconnect capacitance +input capacitance.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 7

The interconnect capacitance is formed by:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 7

 Interconnect line between the gates form interconnect capacitance.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 8

The amount of gate oxide capacitance is determined by:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 8

The amount of gate oxide capacitance is determined by the area of the gate.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 9

By what amount is Sidewall doping larger than substrate doping concentration.

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 9

The sidewall doping is 10 times larger.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 10

Zero bias depletion capacitance per unit length at sidewall junctions is given by, (Cj is the zero bias depletion capacitance per unit are

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 10

Since the doping concentration is 10 times larger.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 11

The typical value of capacitance in pF x 10¯⁴/µm² for gate to channel in λ based design is:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 11

The gate to channel capacitance in λ based design is 4 pF x 10¯⁴/µm².

Test: MOS Circuits Area Capacitance And Delay Unit - Question 12

The active capacitance is also called as:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 12

 Diffusion capacitance is also called as active capacitance.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 13

The value of diffusion capacitance in pF x 10¯⁴/µm² in 2 µm design is:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 13

Diffusion capacitance has a value of 8 pF x 10¯⁴/µm².

Test: MOS Circuits Area Capacitance And Delay Unit - Question 14

The value of standard unit of capacitance is:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 14

The value of standard unit of capacitance depends on the design style used.

Test: MOS Circuits Area Capacitance And Delay Unit - Question 15

The standard unit of capacitance is defined as:

Detailed Solution for Test: MOS Circuits Area Capacitance And Delay Unit - Question 15

Standard capacitance is capacitance of gate to channel with standard area.

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