Test: Flash Memory - Electrical Engineering (EE) MCQ

Flash memory is a electronic, solid state, non-volatile memory storage device which can be electrically erased and reprogrammed.

NOR type flash allows a single machine word that is one byte to be written to an erased location or read independently.

NAND type flash memories operates primarily in memory cards, USB flash drives and solid state drivers.

Flash memory has fast read access time, but static RAM or ROM are comparatively faster than flash memory.

Floating gate transistor in flash memory has two gates. These two gates are – floating gate and control gate.

In NOR type flash memory, each cell has one end connected directly to ground and other end connected to the bit line.

 In NOR type flash memory the data can be erased only blockwise basis. all the cells in an erase segment must be erased together.

The NAND type flash memory also uses floating gate transistors and it is connected to form NAND gate. The transistors are connected in series.

In NAND type flash, memory can be addressed by word, page or even bit wise. In NOR type flash, memory can be addressedby page then word.

One disadvantage of flash memory is that it has finite number of program-erase cycles. This limits the usage of flash memory.