Test: Metal Oxide Semiconductor (MOS) Transistor - Electrical Engineering (EE) MCQ

Introducing Dopants (impurities)

Increasing Pressure

Decreasing Temperature

Deformation of Lattice

Holes

Negative ions

Electrons

Positive ions

Holes

Negative ions

Electrons

Positive ions

N-type source, n-type drain and p-type bulk

N-type source, p-type drain and p-type bulk

P-type source, n-type drain and n-type bulk

P- type source, p-type drain and n-type bulk

None of the mentioned

Metal oxide

Silicon dioxide

Poly Silicon oxide

Oxides of Non metals

Gate to source voltage

Gate current

Source Voltage

None of the mentioned

Channel of negative carriers

Channel is not formed

Channel is clipped

Channel of positive carriers

Gate is applied with positive voltage

Gate is grounded

Gate is applied with negative voltage

Gate is connected to source

Vgs > Vtreshold, Vds=0

Vgd < Vtreshold, Vds=0

Vgs > Vtreshold, Vds>0

Vgd > Vtreshold, Vds<0

Vdsp > Vgsp – Vtp

Vgsp < Vdsp –Vtp

Vgsp > Vtp

Vdsp < Vgsp – Vtp

Vdsp > Vgsp – Vtp

Vgsp < Vdsp –Vtp

Vgsp > Vtp

Vdsp < Vgsp – Vtp

φfp = (kT/q)ln(ND/NA)

φfp = (kT/q)ln(NA/ND)

φfp = (kT/q)ln(NA/ ni)

φfp = (kT/q)ln(ni/NA)

Control the conduction of current between the source and the drain, using the potential difference applied at the gate voltage as a control variable

Control the current conduction between the source and the gate, using the electric field applied at the drain voltage as a control variable

Control the current conduction between the PN junction, using the electric field generated by the bias voltage as a control variable

Control the current conduction between the PN junctions, using the electric potential generated by the gate voltage as a control variable