31 Year NEET Previous Year Questions: Semiconductor Electronics - 1

Question 1

Sodium has body-centered packing. The distance between the two nearest atoms is 3.7 Å. The lattice parameter is:
[2009]

Accepted Answer

4.3 &Aring;

Answer

3.0 &Aring;

Answer

8.6 &Aring;

Answer

6.8 &Aring;

Question 2

Which one of the following statements is false?
[2010]

Accepted Answer

The majority carriers in an n-type semiconductor are holes.

Answer

Pure Si doped with trivalent impurities gives a p-type semiconductor.

Answer

Minority carriers in a p-type semiconductor are electrons.

Answer

The resistance of intrinsic semiconductors decreases with an increase in temperature.

Question 3

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has a high melting point?
[2010]

Accepted Answer

Metallic bonding

Answer

Van der Waal's bonding

Answer

Ionic bonding

Answer

Covalent bonding

Question 4

The device that can act as a complete electronic circuit is:
[2010]

Accepted Answer

Integrated circuit

Answer

Junction diode

Answer

Junction transistor

Answer

Zener diode

Question 5

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:
[2010]

Accepted Answer

1250

Answer

500

Answer

1000

Answer

50

Question 6

To get an output Y = 1 from the circuit shown below, the input must be:
[2010]

Accepted Answer

a and c

Answer

a and b

Answer

b and c

Answer

c and d

Question 7

For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The emitter-base junction is forward biased and the base-collector junction is reverse biased.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.

Accepted Answer

(2), (3)

Answer

(3), (4)

Answer

(4), (1)

Answer

(1), (2)

Question 8

The following Figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are given:

The logic gate is:

Accepted Answer

NAND gate

Answer

NOR gate

Answer

OR gate

Answer

AND gate

Question 9

A transistor is operated in common emitter configuration at VC = 2V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is:
[2011]

Accepted Answer

50

Answer

75

Answer

100

Answer

25

Question 10

In forward biasing of the p–n junction:
[2011]

Accepted Answer

The positive terminal of the battery is connected to the p–side and the depletion region becomes thin.

Answer

The positive terminal of the battery is connected to the p–side and the depletion region becomes thick.

Answer

The positive terminal of the battery is connected to the n–side and the depletion region becomes thin.

Answer

The positive terminal of the battery is connected to the n–side and the depletion region becomes thick.

Question 11

Symbolic representation of four logic gate are shown as: [2011]
(i)

(ii)

(iii)

(iv)
Pick out which ones are for AND, NAND and NOT gates, respectively.

Accepted Answer

(ii), (iv) and (iii)

Answer

(ii), (iii) and (iv)

Answer

(iii), (ii) and (i)

Answer

(i), (iii) and (iv)

Question 12

If a small amount of antimony is added to germanium crystal then:
[2011]

Accepted Answer

There will be more free electrons than holes in the semiconductor.

Answer

It becomes a p–type semiconductor.

Answer

The antimony becomes an acceptor atom.

Answer

Its resistance is increased.

Question 13

In the following figure, the diodes which are forward biased are:
[2011M]

(i)

(ii)

(iii)

(iv)

Accepted Answer

(C) and (A)

Answer

(C) only

Answer

(B) and (D)

Answer

(A), (B) and (D)

Question 14

Pure Si at 500K has an equal number of electrons (n_e) and hole (n_h) concentrations of 1.5 × 10¹⁶ m^–3. Doping by indium increases n_hto 4.5 × 10²² m^–3. The doped semiconductor is of:
[2011M]

Accepted Answer

p-type having electron concentration, n_e = 5 × 10⁹ m^–3

Answer

n-type with electron concentration, n_e = 5 × 10²² m^–3

Answer

p-type with electron concentration, n_e = 2.5 ×10¹⁰ m^–3

Answer

n-type with electron concentration, n_e = 2.5 × 10²³ m^–3

Question 15

A Zener diode, having a breakdown voltage equal to 15V, is used in a voltage regulator circuit shown in the figure. The current through the diode is:
[2011M]

Accepted Answer

5 mA

Answer

10 mA

Answer

15 mA

Answer

20 mA

Question 16

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:

Accepted Answer

0.5 A

Answer

0.75 A

Answer

Zero

Answer

0.25 A

Question 17

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 2V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is:
[2012]

Accepted Answer

10 mV

Answer

0.1 V

Answer

1.0 V

Answer

1 mV

Question 18

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:
[2012]

Accepted Answer

The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.

Answer

In case of C, the valence band is not completely filled at absolute zero temperature.

Answer

In case of C, the conduction band is partly filled even at absolute zero temperature.

Answer

The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.

Question 19

Transfer characteristics [output voltage (V₀) vs input voltage (V₁)] for a base biased transistor in CE configuration is as shown in the figure. For using a transistor as a switch, it is used:
[2012]

Accepted Answer

In both region I and III

Answer

In region III

Answer

In region II

Answer

In region I

Question 20

The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B and C are given. The logic circuit gate is:
[2012]

Accepted Answer

OR gate

Answer

NOR gate

Answer

AND gate

Answer

NAND gate

Question 21

The input resistance of a silicon transistor is100 Ω. Base current is changed by 40 μA which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
[2012M]

Accepted Answer

2000

Answer

3000

Answer

4000

Answer

1000

Question 22

To get an output Y = 1 in the given circuit which of the following input will be correct:
[2012M]

Accepted Answer

b

Answer

a

Answer

c

Answer

d

Question 23

In an n-type semiconductor, which of the following statement is true?
[2013]

Accepted Answer

Holes are minority carriers and pentavalent atoms are dopants.

Answer

Electrons are minority carriers and pentavalent atoms are dopants.

Answer

Holes are majority carriers and trivalent atoms are dopants.

Answer

Electrons are majority carriers and trivalent atoms are dopants.

Question 24

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and a current gain of 25. If the above transistor is replaced with another one with transconductance 0.02 mho and a current gain of 20, the voltage gain will be:
[2013]

Accepted Answer

2/3 G

Answer

1.5 G

Answer

1/3 G

Answer

5/4 G

Question 25

The output (X) of the logic circuit shown in figure will be:

Accepted Answer

X = A.B

Answer

Answer

Answer

31 Year NEET Previous Questions: Semiconductor Electronics - 1 Free MCQ

MCQ Practice Test & Solutions: 31 Year NEET Previous Year Questions: Semiconductor Electronics - 1 (25 Questions)

Sodium has body-centered packing. The distance between the two nearest atoms is 3.7 Å. The lattice parameter is:
[2009]

Which one of the following statements is false?
[2010]

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has a high melting point?
[2010]

The device that can act as a complete electronic circuit is:
[2010]

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:
[2010]

To get an output Y = 1 from the circuit shown below, the input must be:
[2010]

The following Figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are given:
The logic gate is:

A transistor is operated in common emitter configuration at VC = 2V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is:
[2011]

In forward biasing of the p–n junction:
[2011]

Symbolic representation of four logic gate are shown as: [2011]
(i)
(ii)
(iii)
(iv)
Pick out which ones are for AND, NAND and NOT gates, respectively.

If a small amount of antimony is added to germanium crystal then:
[2011]

In the following figure, the diodes which are forward biased are:
[2011M]
(i)
(ii)
(iii)
(iv)

Pure Si at 500K has an equal number of electrons (n_e) and hole (n_h) concentrations of 1.5 × 10¹⁶ m^–3. Doping by indium increases n_hto 4.5 × 10²² m^–3. The doped semiconductor is of:
[2011M]

A Zener diode, having a breakdown voltage equal to 15V, is used in a voltage regulator circuit shown in the figure. The current through the diode is:
[2011M]

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 2V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is:
[2012]

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:
[2012]

Transfer characteristics [output voltage (V₀) vs input voltage (V₁)] for a base biased transistor in CE configuration is as shown in the figure. For using a transistor as a switch, it is used:
[2012]

The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B and C are given. The logic circuit gate is:
[2012]

The input resistance of a silicon transistor is100 Ω. Base current is changed by 40 μA which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
[2012M]

To get an output Y = 1 in the given circuit which of the following input will be correct:
[2012M]

In an n-type semiconductor, which of the following statement is true?
[2013]

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and a current gain of 25. If the above transistor is replaced with another one with transconductance 0.02 mho and a current gain of 20, the voltage gain will be:
[2013]

The output (X) of the logic circuit shown in figure will be:

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31 Year NEET Previous Questions: Semiconductor Electronics - 1 Free MCQ

MCQ Practice Test & Solutions: 31 Year NEET Previous Year Questions: Semiconductor Electronics - 1 (25 Questions)

Sodium has body-centered packing. The distance between the two nearest atoms is 3.7 Å. The lattice parameter is: [2009]

Which one of the following statements is false? [2010]

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has a high melting point? [2010]

The device that can act as a complete electronic circuit is: [2010]

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is: [2010]

To get an output Y = 1 from the circuit shown below, the input must be: [2010]

The following Figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are given:The logic gate is:

A transistor is operated in common emitter configuration at VC = 2V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is: [2011]

In forward biasing of the p–n junction: [2011]

Symbolic representation of four logic gate are shown as: [2011] (i)(ii)(iii)(iv) Pick out which ones are for AND, NAND and NOT gates, respectively.

If a small amount of antimony is added to germanium crystal then: [2011]

In the following figure, the diodes which are forward biased are: [2011M](i)(ii)(iii)(iv)

Pure Si at 500K has an equal number of electrons (ne) and hole (nh) concentrations of 1.5 × 1016 m–3. Doping by indium increases nh to 4.5 × 1022 m–3. The doped semiconductor is of: [2011M]

A Zener diode, having a breakdown voltage equal to 15V, is used in a voltage regulator circuit shown in the figure. The current through the diode is: [2011M]

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 2V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is: [2012]

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because: [2012]

Transfer characteristics [output voltage (V0) vs input voltage (V1)] for a base biased transistor in CE configuration is as shown in the figure. For using a transistor as a switch, it is used: [2012]

The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B and C are given. The logic circuit gate is: [2012]

The input resistance of a silicon transistor is100 Ω. Base current is changed by 40 μA which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is: [2012M]

To get an output Y = 1 in the given circuit which of the following input will be correct: [2012M]

In an n-type semiconductor, which of the following statement is true? [2013]

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and a current gain of 25. If the above transistor is replaced with another one with transconductance 0.02 mho and a current gain of 20, the voltage gain will be: [2013]

The output (X) of the logic circuit shown in figure will be:

Physics Class 12

Physics Class 12

Top Courses for NEET

About this NEET Practice Test

Explore more NEET Study Resources

Sodium has body-centered packing. The distance between the two nearest atoms is 3.7 Å. The lattice parameter is:
[2009]

Which one of the following statements is false?
[2010]

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has a high melting point?
[2010]

The device that can act as a complete electronic circuit is:
[2010]

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain of the amplifier is:
[2010]

To get an output Y = 1 from the circuit shown below, the input must be:
[2010]

The following Figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are given:
The logic gate is:

A transistor is operated in common emitter configuration at VC = 2V such that a change in the base current from 100 μA to 300 μA produces a change in the collector current from 10 mA to 20 mA. The current gain is:
[2011]

In forward biasing of the p–n junction:
[2011]

Symbolic representation of four logic gate are shown as: [2011]
(i)
(ii)
(iii)
(iv)
Pick out which ones are for AND, NAND and NOT gates, respectively.

If a small amount of antimony is added to germanium crystal then:
[2011]

In the following figure, the diodes which are forward biased are:
[2011M]
(i)
(ii)
(iii)
(iv)

Pure Si at 500K has an equal number of electrons (n_e) and hole (n_h) concentrations of 1.5 × 10¹⁶ m^–3. Doping by indium increases n_hto 4.5 × 10²² m^–3. The doped semiconductor is of:
[2011M]

A Zener diode, having a breakdown voltage equal to 15V, is used in a voltage regulator circuit shown in the figure. The current through the diode is:
[2011M]

In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 2V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is:
[2012]

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:
[2012]

Transfer characteristics [output voltage (V₀) vs input voltage (V₁)] for a base biased transistor in CE configuration is as shown in the figure. For using a transistor as a switch, it is used:
[2012]

The figure shows a logic circuit with two inputs A and B and the output C. The voltage waveforms across A, B and C are given. The logic circuit gate is:
[2012]

The input resistance of a silicon transistor is100 Ω. Base current is changed by 40 μA which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
[2012M]

To get an output Y = 1 in the given circuit which of the following input will be correct:
[2012M]

In an n-type semiconductor, which of the following statement is true?
[2013]

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and a current gain of 25. If the above transistor is replaced with another one with transconductance 0.02 mho and a current gain of 20, the voltage gain will be:
[2013]