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Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Test  >  Analog and Digital Electronics  >  Analog Electronics - 3 - Electrical Engineering (EE) MCQ

Analog Electronics - 3 for GATE EE and Digital - Free MCQ Test with solutions


MCQ Practice Test & Solutions: Analog Electronics - 3 (10 Questions)

You can prepare effectively for Electrical Engineering (EE) Analog and Digital Electronics with this dedicated MCQ Practice Test (available with solutions) on the important topic of "Analog Electronics - 3". These 10 questions have been designed by the experts with the latest curriculum of Electrical Engineering (EE) 2026, to help you master the concept.

Test Highlights:

  • - Format: Multiple Choice Questions (MCQ)
  • - Duration: 30 minutes
  • - Number of Questions: 10

Sign up on EduRev for free to attempt this test and track your preparation progress.

Analog Electronics - 3 - Question 1
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When the gate-to-source voltage VGS of a MOSFET with a threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400mV is

Detailed Solution: Question 1

The MOSFET current is saturation is given by,

*Answer can only contain numeric values
Analog Electronics - 3 - Question 2
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What percentage of current IDSS is the drain current for a JFET, if the gate to source voltage is 65% of the pinch-off voltage.


Detailed Solution: Question 2

VGS = 0.65 Vp

The drain current of JFET is given as

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Analog Electronics - 3 - Question 3
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The ‘Pinch-off’ voltage of a JFET is 4 V. Then the off gate voltage of JFET is

Detailed Solution: Question 3

The Cut off gate voltage is also known as pinch off voltage at which the drain current becomes zero.

*Answer can only contain numeric values
Analog Electronics - 3 - Question 4
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A MOSFET operating in saturation mode is shown in the below figure. The drain current is given as ID = ½ (VGS – 0.75)2 mA If VS = 5V, then the value of RS­­­ in kΩ is __________


Detailed Solution: Question 4

The bias used in the given circuit is voltage divider bias. The gate voltage 

∴ Gate source voltage VGS = VG - VS

= 8 – 5

= 3 V

∴ ID = ½ (3 - 0.75)2 mA

≅ 2.53 mA

VS = RSID

*Answer can only contain numeric values
Analog Electronics - 3 - Question 5
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For the amplifier shown below, the drain current changes from 5 mA to 7 mA when the gate voltage D changed from -4.0 V to -3.7 V. The voltage gain of the amplifier is _____


Detailed Solution: Question 5

The gain of the amplifier is given by:

Av = - gmrD

gm: trans conductance of transistor

rD: effective AC resistance seen by drain terminal

gm = 6.66 ms

rD = RD||RL = 6k||6k = 3 kΩ

Av = -6.66 × 10-3 × 3 × 103

Av = -19.98 ≈ 20

Analog Electronics - 3 - Question 6
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The NMOS transistors in the circuit below have VT = 1 V, μncox = 120 μA/V2, λ = 0 and L1 = L2 = L3 = 1 μm. The values of width of each of Q1, Q2, Q3 such that the voltage values are as shown in below figure are

Detailed Solution: Question 6

Let ID be the drain current, it will be common for all three transistors. All the transistors are operating in saturation since VD = VG

At transistor Q3



Given ID = 120 μA

⇒ W2 = 2 μm

*Answer can only contain numeric values
Analog Electronics - 3 - Question 7
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A common source amplifier biased at ID = 0.25 mA with RD = 20 kΩ and early voltage VA = 50 V and overdrive voltage (VGS – VT)DC = 0.25 V. If the input is fed through 100 kΩ and output are taken from 20 kΩ loads then the overall gain of the amplifier is _____ V/V.


Detailed Solution: Question 7

The Ac equivalent circuit can be drawn as


ID = 0.25 mA; VA = 50 V; Vov (= VGs - VT) = 0.25 V

(∵ rO >> RD)

= -36.36 V/V

Av(Overall gain) = -gm(RD || rO || RL)

= -2 mΩ-1 × 9.53 kΩ

≃ -19 V/V

Analog Electronics - 3 - Question 8
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The transistor I the circuit is shown below has parameters IDSS = 8 mA and VP = -4 V. The value of VDS is___

Detailed Solution: Question 8


Assume the transistor in saturation,

 

Assumption is correct.

Hence VDS = 2.85 V.

*Answer can only contain numeric values
Analog Electronics - 3 - Question 9
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The small signal resistance (dVC/dID) of the n-channel MOSFET shown in figure below at bias voltage VC = 2V is (in kΩ) _________

Given μnCox W/L = 40μ A/V2

VT = 1 V


Detailed Solution: Question 9

Since VDS = VGS the device is in saturation

 

= 40 × 10-6 (2 - 1)

Hence small signal resistance

= 25 kΩ

*Answer can only contain numeric values
Analog Electronics - 3 - Question 10
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In the circuit shown below the parameters are gm = 


Detailed Solution: Question 10

The small signal equivalent circuit is as shown below

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About this Electrical Engineering (EE) Practice Test

This test contains 10 MCQs on Analog Electronics - 3 with detailed solutions for each question. It is part of the Analog and Digital Electronics course on EduRev, designed to align with the current Electrical Engineering (EE) syllabus. Each solution explains not just the correct answer but also gives you an understanding of the topic — not just to attempt the question but also help you prepare for the exam with practice.

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