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Analog Electronics - 3 - Electronics and Communication Engineering (ECE) MCQ


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10 Questions MCQ Test - Analog Electronics - 3

Analog Electronics - 3 for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Analog Electronics - 3 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Analog Electronics - 3 MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Analog Electronics - 3 below.
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Analog Electronics - 3 - Question 1

When the gate-to-source voltage VGS of a MOSFET with a threshold voltage of 400mV, working in saturation is 900mV, the drain current is observed to be 1mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400mV is

Detailed Solution for Analog Electronics - 3 - Question 1

The MOSFET current is saturation is given by,

*Answer can only contain numeric values
Analog Electronics - 3 - Question 2

What percentage of current IDSS is the drain current for a JFET, if the gate to source voltage is 65% of the pinch-off voltage.


Detailed Solution for Analog Electronics - 3 - Question 2

VGS = 0.65 Vp

The drain current of JFET is given as

Analog Electronics - 3 - Question 3

The ‘Pinch-off’ voltage of a JFET is 4 V. Then the off gate voltage of JFET is

Detailed Solution for Analog Electronics - 3 - Question 3

The Cut off gate voltage is also known as pinch off voltage at which the drain current becomes zero.

*Answer can only contain numeric values
Analog Electronics - 3 - Question 4

A MOSFET operating in saturation mode is shown in the below figure. The drain current is given as ID = ½ (VGS – 0.75)2 mA If VS = 5V, then the value of RS­­­ in kΩ is __________


Detailed Solution for Analog Electronics - 3 - Question 4

The bias used in the given circuit is voltage divider bias. The gate voltage 

∴ Gate source voltage VGS = VG - VS

= 8 – 5

= 3 V

∴ ID = ½ (3 - 0.75)2 mA

≅ 2.53 mA

VS = RSID

*Answer can only contain numeric values
Analog Electronics - 3 - Question 5

For the amplifier shown below, the drain current changes from 5 mA to 7 mA when the gate voltage D changed from -4.0 V to -3.7 V. The voltage gain of the amplifier is _____


Detailed Solution for Analog Electronics - 3 - Question 5

The gain of the amplifier is given by:

Av = - gmrD

gm: trans conductance of transistor

rD: effective AC resistance seen by drain terminal

gm = 6.66 ms

rD = RD||RL = 6k||6k = 3 kΩ

Av = -6.66 × 10-3 × 3 × 103

Av = -19.98 ≈ 20

Analog Electronics - 3 - Question 6

The NMOS transistors in the circuit below have VT = 1 V, μncox = 120 μA/V2, λ = 0 and L1 = L2 = L3 = 1 μm. The values of width of each of Q1, Q2, Q3 such that the voltage values are as shown in below figure are

Detailed Solution for Analog Electronics - 3 - Question 6

Let ID be the drain current, it will be common for all three transistors. All the transistors are operating in saturation since VD = VG

At transistor Q3



Given ID = 120 μA

⇒ W2 = 2 μm

*Answer can only contain numeric values
Analog Electronics - 3 - Question 7

A common source amplifier biased at ID = 0.25 mA with RD = 20 kΩ and early voltage VA = 50 V and overdrive voltage (VGS – VT)DC = 0.25 V. If the input is fed through 100 kΩ and output are taken from 20 kΩ loads then the overall gain of the amplifier is _____ V/V.


Detailed Solution for Analog Electronics - 3 - Question 7

The Ac equivalent circuit can be drawn as


ID = 0.25 mA; VA = 50 V; Vov (= VGs - VT) = 0.25 V

(∵ rO >> RD)

= -36.36 V/V

Av(Overall gain) = -gm(R|| r|| RL)

= -2 mΩ-1 × 9.53 kΩ

≃ -19 V/V

Analog Electronics - 3 - Question 8

The transistor I the circuit is shown below has parameters IDSS = 8 mA and VP = -4 V. The value of VDS is___

Detailed Solution for Analog Electronics - 3 - Question 8


Assume the transistor in saturation,

 

Assumption is correct.

Hence VDS = 2.85 V.

*Answer can only contain numeric values
Analog Electronics - 3 - Question 9

The small signal resistance (dVC/dID) of the n-channel MOSFET shown in figure below at bias voltage VC = 2V is (in kΩ) _________

Given μnCox W/L = 40μ A/V2

VT = 1 V


Detailed Solution for Analog Electronics - 3 - Question 9

Since VDS = VGS the device is in saturation

 

= 40 × 10-6 (2 - 1)

Hence small signal resistance

= 25 kΩ

*Answer can only contain numeric values
Analog Electronics - 3 - Question 10

In the circuit shown below the parameters are gm = 


Detailed Solution for Analog Electronics - 3 - Question 10

The small signal equivalent circuit is as shown below

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