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Electronics and Communication Engineering (ECE) Exam  >  Electronics and Communication Engineering (ECE) Tests  >  Test: Field Effect Transistors- 1 - Electronics and Communication Engineering (ECE) MCQ

Test: Field Effect Transistors- 1 - Electronics and Communication Engineering (ECE) MCQ


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10 Questions MCQ Test - Test: Field Effect Transistors- 1

Test: Field Effect Transistors- 1 for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Test: Field Effect Transistors- 1 questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: Field Effect Transistors- 1 MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Field Effect Transistors- 1 below.
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Test: Field Effect Transistors- 1 - Question 1
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FET is advantageous in comparison with BJT because of

Detailed Solution for Test: Field Effect Transistors- 1 - Question 1

As the input circuit of FET is reversed biased, FET exhibits a much higher input impedance (in the order of 100 MΩ) and lower output impedance. So, FET can act as an excellent buffer amplifier but the BJT has low input impedance because its input circuit is forward biased.

Test: Field Effect Transistors- 1 - Question 2
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For the operation of a depletion-type n-MOSFET, the gate voltage has to be

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Test: Field Effect Transistors- 1 - Question 3
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JFET has main drawback of

Detailed Solution for Test: Field Effect Transistors- 1 - Question 3

JFET has main drawback of having small gain bandwidth product due to the junction capacitive effects and produce more signal distortion except for small signal operation.

Test: Field Effect Transistors- 1 - Question 4
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The extremely high input impedance of a MOSFET is primarily due to the
Test: Field Effect Transistors- 1 - Question 5
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In a JFET, at pinch-off voltage applied on the gate
Detailed Solution for Test: Field Effect Transistors- 1 - Question 5

The “drain characteristic” or the “output characteristic” is shown below. Here, in the pinch-off region, as VDS is increased then ID almost remains constant.

Test: Field Effect Transistors- 1 - Question 6
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What is the value of transconductance when the reverse gate voltage of JFET changes from 4.0 to 3.9 V and the drain current changes from 1.3 to 1.6 mA?
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Test: Field Effect Transistors- 1 - Question 7
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A FET has a drain current of 4 mA. If IDss = 8 mA and VGS(off) = - 6V, then the value of gate to source voltage would be
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or 
or  

Test: Field Effect Transistors- 1 - Question 8
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The gate controls
Test: Field Effect Transistors- 1 - Question 9
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Which of the following statements associated with FET is/are correct compared to BJT?
1. It has higher cut-off frequencies and switching speed.
2. The performance of FET is relatively more affected by ambient temperature changes.
3. FETs are cheaper to produce.
4. FETs are suitable for the fabrication of ICs because they occupy less space than BJTs.
Detailed Solution for Test: Field Effect Transistors- 1 - Question 9
  • Since FET does not suffer from minority carrier storage effects, it has higher switching speeds and cut-off frequencies.'
  • The performance of FET is relatively unaffected by ambient temperature changes compared to BJT.
  • BJTs are cheaper to produce.
  • FETs are much easier to fabricate and are particularly suitable for ICs because they occupy less space than BJTs.

Hence, statements 1 and 4 are only correct.

Test: Field Effect Transistors- 1 - Question 10
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Assertion (A): FET does not suffer from thermal breakdown.
Reason (R): FET has a positive temperature coefficient for resistance.
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