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Test: FET Biasing - Electronics and Communication Engineering (ECE) MCQ


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15 Questions MCQ Test - Test: FET Biasing

Test: FET Biasing for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Test: FET Biasing questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: FET Biasing MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: FET Biasing below.
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Test: FET Biasing - Question 1

In a fixed bias circuit shown below, find out S(ICO)?

Detailed Solution for Test: FET Biasing - Question 1

Bias stabilization is a process of making Q-point independent of changes in temperature and changes in the transistor parameter.

Current stability factor
 

Fixed bias circuit:

Base current IB is fixed. Hence it is called a fixed biased circuit.

S = 1 + β

Since S is very large, IC will be unstable

Test: FET Biasing - Question 2

In an amplifier coupling, capacitors are employed for

Detailed Solution for Test: FET Biasing - Question 2

Concept:

Amplifier

It is an electronic device which is used to increase the strength of the signal. Strength means power.

Consider the below CE amplifier as shown:

The advantage of the CE amplifier is its power gain will be high.

Coupling capacitors

These are used in an electronic circuit to pass the AC signal and blocks the unwanted DC components.

  • The unwanted DC signals comes form the electronic devices or preceding stage of the electronic circuit.
  • The reactive nature of the capacitor is useful for different behavior to different frequencies.
  • In audio systems, DC sources are used to power audio circuits.

Coupling capacitors are essential components in amplifier circuits. They are used to prevent interference of a transistor’s bias voltage by AC signals.

In most amplifier circuits, this is achieved by driving the signal to the base terminal of a transistor through a coupling capacitor.

Conclusion:

Option C is correct.

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Test: FET Biasing - Question 3

Biasing is used in transition amplifiers to

1. Stabilize the operating point against temperature variations.

2. Place the operating point in the linear region of the characteristics.

3. Make α, β and ICO of the transistor independent of temperature variations.

4. Reduce distortion and increase dynamic range.

Detailed Solution for Test: FET Biasing - Question 3

The purpose of Biasing in BJT amplifier:

i) To Stabilize Q-point in its linear region of operation (Q-point is an operating point).

[Statement 2 correct]

ii) To stabilize Q-point in against variation of temperature because

Ic = βIB + (1 + β) Ico

Ico → leakage current.

Where Ico, β1, and IB are temperature dependent.

i.e. Temp ↑ → Ico ↑ → β ↑ → α ↑     

(∵β=α1−α)

[Statement 1 correct], [Statement 3 wrong]

iii) To reduce distortion and increase dynamic range.

Since biasing fixed the Q-point so that there is no variation in the output so distortion is reduced hence dynamic range i.e. operating range of the amplifier is improved.

[Statement 4 correct]

So, statement 1, 2, 4 are correct.

iv) Biasing must provide the operating point independent of β of the transistor. So that variation in β due to temperature change does not affect the Q-point of an amplifier.

Test: FET Biasing - Question 4

A junction FET can be used as a voltage variable resistor 

Detailed Solution for Test: FET Biasing - Question 4

A field-effect transistor works as a voltage variable resistor in the ohmic region.

It works as an amplifier in the saturation region.

Pinch off voltage:

The voltage at which channel will be pinched off i.e. no further movement of carriers from source to drain and the current will be practically constant is called the ‘Pinch off voltage’.

VP = VGS (Cutoff) = VGS (OFF)

Condition for pinch off saturation:

VDS = VGS - VP

To operate FET as an amplifier, it is operated in the saturation region.

Cutoff: ID = 0

Linear: ID increases linearly

Saturation: ID is constant

Note:

1) ID ≤ IDSS always

2) This also can be used as a ‘Voltage variable resistor. 

Test: FET Biasing - Question 5

Which of the following relation is true about gate current?

Detailed Solution for Test: FET Biasing - Question 5

The FET physical structure which contains silicon dioxide provides infinite resistance. Hence no current will flow through the gate terminal.

Test: FET Biasing - Question 6

For a fixed bias circuit the drain current was 1mA, what is the value of source current?

Detailed Solution for Test: FET Biasing - Question 6

We know that for an FET same current flows through the gate and source terminal,
Hence source current=1mA.

Test: FET Biasing - Question 7

Which of the following equation brings the relation between gate to source voltage and drain current in Self Bias?

Detailed Solution for Test: FET Biasing - Question 7

VR= ID Rs
But VR+ Vgs = 0
Vgs = -ID Rs.

Test: FET Biasing - Question 8

Find the gate voltage for voltage divider having R= R= 1KΩ and VDD = 5V?

Detailed Solution for Test: FET Biasing - Question 8

VG = R× VDD/R+ R2
⇒ V= 1×5/2
⇒ V=  2.5V.

Test: FET Biasing - Question 9

What will happen if values of Rs increase?

Detailed Solution for Test: FET Biasing - Question 9

Increasing values of Rs result in lower quiescent values of ID and more negative values of Vgs.

Test: FET Biasing - Question 10

Which of the following equations gives the relation between ID and Vgs?

Detailed Solution for Test: FET Biasing - Question 10

The above equation called as Shockley’s equation depicts the relation between ID and Vgs. When Vgs becomes equal toVp, the current will become zero, which clearly satisfies the physical nature of FET.

Test: FET Biasing - Question 11

For a fixed bias circuit the drain current was 1mA, VDD = 12V, determine drain resistance required if VDS = 10V?

Detailed Solution for Test: FET Biasing - Question 11

 VDS = VDD - ID RD
⇒10 = 12-R× 1mA
⇒ R= 2/1mA
= 2 KΩ.

Test: FET Biasing - Question 12

For a self-bias circuit, find drain to source voltage if VDD = 12V, I= 1mA, R s= R= 1KΩ?

Detailed Solution for Test: FET Biasing - Question 12

VDS = VDD - ID (R+ Rs)
⇒ VDS = 12 - 1mA(1KΩ + 1KΩ)
⇒ VDS = 10V.

Test: FET Biasing - Question 13

Find the gate to source voltage for voltage divider having R= R= 2KΩ and VDD = 12V, I= 1mA and R= 4KΩ?

Detailed Solution for Test: FET Biasing - Question 13

VG = R× VDD/R+ R2
⇒ V= 2 × 12/4
⇒ VG = 6V
⇒ VGS = V- ID Rs
⇒ VGS = 2V.

Test: FET Biasing - Question 14

What is the current flowing through the R1 resistor for voltage divider (R1 = R2 = 1KΩ, VDD = 10V)?

Detailed Solution for Test: FET Biasing - Question 14

IR= IR2 = VDD/R+ R2
⇒ IR1 = 10/2KΩ
⇒ IR= 5mA.

Test: FET Biasing - Question 15

What is the small-signal gain of below circuit?

Detailed Solution for Test: FET Biasing - Question 15

Concept:

For Voltage divider bias amplifier:

Input Resistance:


Output Resistance: 

Voltage Gain:

Calculation:

Voltage gain = AV

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