During high frequency applications of a B.J.T., which parasitic capacitors arise between the base and the emitter?
During high frequency applications of a B.J.T, which parasitic capacitors arise between the collector and the base?
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Which parasitic capacitors do not affect the frequency response of the C.E. stage, of the B.J.T.?
Which parasitic capacitors don’t affect the frequency response of the C.C. stage of the B.J.T.?
If the total capacitance between the base and the emitter increases by a factor of 2, the transit frequency __________
Which effect plays a critical role in producing changes in the frequency response of the B.J.T.?
If a C.E. stage with early effect has a load Rl and transconductance gm, what is the factor by which the capacitance between the base and the collector at the output side, gets multiplied?
For a high frequency response of a simple C.E. stage with a transconductance of gm, what is Cout?
Which parasitic capacitors don’t affect the frequency response of the C.B. stage of the B.J.T.?
If the transconductance of the B.J.T increases, the transit frequency ______