Semiconductors - Online Test (04-01-2017) - Class 12 MCQ
30 Questions MCQ Test - Semiconductors - Online Test (04-01-2017)
A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes
A half-wave rectifier is being used to rectify is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified voltage obtained in one second is:
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Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 X 1016 m-3. Doping by indium increases nh to 4.5 X 1022 m3. The doped semiconductor is
The forbidden energy band gap in conductors, semiconductors and insulators are EG1 , EG2 and EG3 respectively. The relation among them is
The forbidden energy gap in Ge is 0.72 eV. Given hc = 12400 eV – Å. The maximum wavelength of radiation that will generate electron hole pair is
The temperature dependence of resistances of Cu and undoped Si in the temperature range 300-400K, is best described by
A diode having potential difference 0.5 V across its junction which does not depend on current, is connected in series with resisitance of 20Ω across source. If 0.1 A current passes through resistance, then what is the voltage of the source?
A light emitting diode has a voltage drop of 2V across it and passes a current of 10mA when it operates with a 6V battery through a limiting resistor R. The value of R is
When forward bias is applied to a P-N junction, then what happens to the potential barrier VB , and the width of charge depleted region x
Avalanche breakdown in a PN junction diode is due to
In the case of constants α and β of a transistor
If β , RL and r are the ac current gain, load resistance and the input resistance of a transistor respectively in CE configuration, the voltage and the power gains respectively are
The input resistance of the common emitter transistor amplifier, if the output resistance is 500 KΩ, the current gain α = 0.98 and power gain is 6.0625 X 106 , is
A npn transistor is connected in common emitter configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance is 192Ω, the voltage gain and the power gain of the amplifier will respectively be
A logic gate is an electronic circuit which
The current voltage relation for diode is given by I = (e1000V/T -1) mA, where the applied voltage V is in volts and the temperature T is in degree kelvin. If a astudent makes an error measuring 0.01V while measuring the current of 5mA at 300K, what will be error in the value of current in mA?
Which one is the correct relation for thermionic emission
The peak voltage in the output of a half wave diode rectifier fed with a sinusodial signal without filter is 10 V. The dc component of the output voltage is
A transistor is used in common emitter mode as an amplifier. Then
For a common emitter configuration, if α and β have their usual meanings, the incorrect relationship between α and β is
Would there be any advantage to adding n-type or p-type impurities to copper
In the breakdown region, a zener didoe behaves like a …………… source
The disadvantage of a half-wave rectifier is that the……………….
The ripple factor of a half-wave rectifier is …………………
A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-down transformer has a turns ratio of 8:1, what is the peak load voltage? Ignore diode drop.
In a metal-cased bipolar transistor, which of the three connections of the transistor are often connected directly to the conducting case?
Color of light emitted by LED depends on
Fermi level for extrinsic semiconductor depends on
Important Questions for Semiconductors - Online Test (04-01-2017)
Semiconductors - Online Test (04-01-2017) MCQs with Answers
Semiconductors - Online Test (04-01-2017)
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