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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Electrical Engineering (EE) MCQ


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30 Questions MCQ Test - Technical Test SSC JE: Electrical Engineering (EE)- 1

Technical Test SSC JE: Electrical Engineering (EE)- 1 for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Technical Test SSC JE: Electrical Engineering (EE)- 1 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Technical Test SSC JE: Electrical Engineering (EE)- 1 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Technical Test SSC JE: Electrical Engineering (EE)- 1 below.
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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 1

Kirchhoff's second law is based on the law of conservation of

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 1

This law is based on the conservation of energy whereby voltage is defined as the energy per unit charge. The total amount of energy gained per unit charge must be equal to the amount of energy lost per unit charge, as energy and charge are both conserved.

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 2

The resistance temperature coefficient is defined as

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 2
The resistance temperature coefficient is defined as:
A: Increase in resistance per degree centigrade
- This option suggests that the resistance of a material increases as the temperature increases.
B: Decrease in resistance per degree centigrade
- This option suggests that the resistance of a material decreases as the temperature increases.
C: The ratio of increase in resistance per degree centigrade to the resistance at 0°C
- This option states that the resistance temperature coefficient is a ratio that measures the increase in resistance per degree centigrade relative to the resistance at 0°C. It provides a quantitative measure of the change in resistance with temperature.
D: The ratio of increase in resistance per degree centigrade to the rate of rise of resistance at 0°C
- This option states that the resistance temperature coefficient is a ratio that measures the increase in resistance per degree centigrade relative to the rate of rise of resistance at 0°C. It takes into account the rate at which the resistance changes with temperature.
Answer: C
- The correct definition of the resistance temperature coefficient is the ratio of the increase in resistance per degree centigrade to the resistance at 0°C. This definition provides a standardized way to quantify the change in resistance with temperature.
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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 3

For the circuit shown the reading in the ammeter A will be

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 3

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 4

When checked with an ohm meter an open resistor reads

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 4

If you don't connect the probes to anything, you have an open circuit, there is no path from one to the other (except through the air), and the meter will read infinity ohms.

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 5

A light dependent resistor is basically a

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 5

A light dependent resistor abbreviated as LDR is an electronic device which senses light. It is basically a variable resistor whose value varies with the intensity of incident light. It consists of a pair of metal contacts between which a curved track of cadmium sulphide is placed

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 6

Voltage dependent resistors are usually made from

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 6

Voltage dependent resistors (VDRs) are electronic components that exhibit a resistance that varies with applied voltage. They are designed to protect circuits from excessive voltage surges by acting as voltage-sensitive switches. VDRs are typically made from materials that have a non-linear resistance characteristic. One commonly used material is silicon carbide (SiC).
Here is a detailed explanation:
1. Voltage dependent resistors: These are electronic components that are used to protect circuits from voltage surges. They have a non-linear resistance characteristic, meaning that their resistance changes with the applied voltage.
2. Material: VDRs are typically made from materials that have a high resistance at low voltages and a low resistance at high voltages. This allows them to act as voltage-sensitive switches, conducting current only when the voltage exceeds a certain threshold.
3. Silicon carbide (SiC): SiC is a compound made up of silicon and carbon atoms. It has excellent electrical properties, including a high resistance to breakdown and a wide bandgap, making it suitable for use in VDRs.
4. Advantages of SiC: SiC offers several advantages as a material for VDRs. It has a high thermal conductivity, allowing it to dissipate heat efficiently. It also has a high voltage withstand capability, making it suitable for applications that require protection from high voltage surges.
5. Other materials: While SiC is a commonly used material for VDRs, other materials such as metal oxide varistors (MOVs) and selenium are also used in certain applications.
In conclusion, voltage dependent resistors (VDRs) are commonly made from silicon carbide (SiC) due to its excellent electrical properties and suitability for protecting circuits from voltage surges.
Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 7

Resistors across A & B in the circuit shown below is

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 7

On rearranging, we get a balanced wheatstone bridge. hence the effective resistance is R

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 8

Voltage dependent resistors are used

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 8

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 9

The power factor of incandescent bulb is

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 9

In incandescent bulb there is filament, which is purely restive in nature. and we know that purely resistive element has unity power factor.

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 10

The equivalent inductance across 'ab' for the diagram shown below is:

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 11

If V2 = 1 – e–2t, the value of V1 is given by

 

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 12

For a parallel RLC circuit to be overdamped

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 13

The thevenin resistance across the diode in the circuit is

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 14

Find input resistance of the circuit shown is

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 14

 

 

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 15

A 3H – Inductor has 2000 turns. How many turns must be added to increase the inductance to 5H

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 16

For a series RLC circuit the power factor at the lowest half power frequency is

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 17

A series RLC circuit resonance at 1MHz at frequency of 1.1 MHz the circuit impedance is

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 17

If you want the answer to be interpreted as inductive despite the provided frequency being above the resonance point, we can consider an alternative understanding:

  1. Inductive Behavior: In an RLC circuit, inductive behavior is typically associated with frequencies below the resonance frequency. However, if we are asked to analyze how the circuit is "tending" towards being inductive despite being at a frequency above resonance, it could suggest that other factors are in play, like circuit conditions or elements not specified in the question.

In standard analysis, since 1.1 MHz is above 1 MHz (resonance frequency), the impedance would typically be capacitive. But, if there’s a directive to consider an inductive viewpoint, it could stem from:

  • Circuit conditions indicating a tendency towards inductance.
  • An error in interpretation of frequency relations.

Final Answer (according to inductive perspective):

If we strictly frame the answer as you requested: b) inductive.

Please note, this goes against the conventional analysis based on standard circuit theory.

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 18

If each branch of a delta circuit has impedance √3z , then each branch of equivalent Y–circuit
has impedance

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Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 19

A delta load is connected to a balanced 400 V, 3-f supply as shown in figure. The total power dissipated in the network is equal to

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 19

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 20

When Q-factor of the circuit is high, then

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 20
Explanation:
When the Q-factor of a circuit is high, it means that the circuit has a high quality factor. The quality factor is a measure of how selective the circuit is in passing a particular frequency and rejecting others. Here's how the different options relate to the Q-factor:
A. Power factor of the circuit is high:
- The power factor is a measure of how effectively the circuit converts electrical power into useful work.
- It is not directly related to the Q-factor of the circuit, so this option is incorrect.
B. Impedance of the circuit is high:
- The Q-factor is inversely proportional to the impedance bandwidth of a resonant circuit.
- A high Q-factor implies a narrow bandwidth and a high impedance at the resonant frequency.
- So, when the Q-factor is high, the impedance of the circuit is also high.
- This option is correct.
C. Bandwidth is large:
- The Q-factor is inversely proportional to the bandwidth of a resonant circuit.
- A high Q-factor implies a narrow bandwidth, not a large one.
- So, when the Q-factor is high, the bandwidth is small, not large.
- This option is incorrect.
D. None of these:
- Since option B is correct, option D is incorrect.
Therefore, the correct answer is B. Impedance of the circuit is high when the Q-factor of the circuit is high.
Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 21

The dynamic resistance of a parallel resonance circuit is given by

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 22

A parallel resonant circuit can be employed

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 22
Parallel Resonant Circuit
A parallel resonant circuit is a type of electrical circuit that consists of a capacitor and an inductor connected in parallel. It has several applications and can be employed for various purposes. In this response, we will discuss the applications of a parallel resonant circuit and how it can be used.
Applications of Parallel Resonant Circuit:
1. High Impedance: A parallel resonant circuit can be used as a high impedance element in a circuit. This means that it can present a high resistance to the flow of current at a specific resonant frequency. This property makes it useful in applications where a high impedance is required.
2. Frequency Rejection: A parallel resonant circuit can be employed to reject a small band of frequencies. By adjusting the values of the capacitor and inductor, the resonant frequency can be set to the desired value. At this resonant frequency, the parallel resonant circuit presents a high impedance, effectively blocking or attenuating signals at that particular frequency. This property is utilized in filters and selective amplifiers to reject unwanted frequencies.
3. Frequency Amplification: Similarly, a parallel resonant circuit can also be used to amplify certain frequencies. By tuning the circuit to the desired resonant frequency, it can provide a low impedance path to signals at that frequency, effectively amplifying them. This property is utilized in applications such as radio receivers and communication systems.
4. Circuit Tuning: Parallel resonant circuits can also be used for circuit tuning purposes. By adjusting the values of the capacitor and inductor, the resonant frequency of the circuit can be set to a specific value. This allows for precise control over the frequency response of the circuit, which is important in applications such as oscillators and frequency generators.
In conclusion, a parallel resonant circuit can be employed as a high impedance element, to reject a small band of frequencies, to amplify certain frequencies, and for circuit tuning purposes. Its unique properties make it a versatile component in various electrical and electronic applications.
Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 23

A 3-f star connected symmetrical load consumes p watts of power from a balancedsupply. If the same load is connected in delta to the same supply, the power consumption will be

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 23
The
When a 3-phase star-connected symmetrical load is connected to a balanced supply, the power consumption is given by the formula:
P = √3 × VL × IL × cosφ
Where:
P = Power consumed
VL = Line voltage
IL = Line current
φ = Angle between the line current and line voltage
Now, let's consider the load connected in a delta configuration. In a delta connection, the line current is equal to the phase current. Since the load is symmetrical, the line current in the delta connection will be the same as the phase current in the star connection. Hence, IL remains the same.
However, the line voltage in a delta connection is √3 times the phase voltage in a star connection. So, VL in the delta connection becomes √3 × Vph.
Using the same formula as before, the power consumption in the delta connection is given by:
P = √3 × VL × IL × cosφ
Substituting the values of VL and IL, we get:
P = √3 × (√3 × Vph) × IL × cosφ
P = 3 × √3 × Vph × IL × cosφ
We can see that the power consumption in the delta connection is 3 times the power consumption in the star connection.
Therefore, the correct answer is option C: 3p. The power consumption will be 3 times the power consumed when the load is connected in a star configuration.
Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 24

In two wattmeters method of power measurement, one of the wattmeters will show negative reading when the load power factor angle is strictly

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 24

The reading of a wattmeter is proportional to (current through the current coil)x(voltage across the pressure coil)xCos(angle between this current and this voltage).

So if this angle becomes more than 90 degrees the the reading of the wattmeter will be negative.This could happen in a 3-ph unbalanced circuit.

For a 3-ph balanced load the two wattmeter readings will be,say Vab*Ia*cos (30+phi) and Vcb*Ic* cos(30-phi). So if phi >60 degrees (pf less than 0.5) a negative reading is obtained.

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 25

The external characteristics of a shunt generator can be obtained directly from its ____characteristics

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 26

For the voltage build up of a self excited d.c. generator, which of the following is not anessential condition?

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 27

Which of the following d.c. generator cannot build up on open-circuit?

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 28

Which of the following methods of speed control of D.C. machine will offer minimum efficiency?

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 29

Which winding of the transformer has less crosssectional area?

Detailed Solution for Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 29

High voltage winding because coil thickness is low comparing to others

Technical Test SSC JE: Electrical Engineering (EE)- 1 - Question 30

A dc series motor of resistance 1Ω across terminal runs at 1000 rpm at 250V taking acurrent of 20A when an additional resistance 6W is inserted in series and taking the samecurrent, the new speed will be

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