Test: Electronic Devices & Digital Communications - 2 - Electronics and Communication Engineering (ECE) MCQ
20 Questions MCQ Test - Test: Electronic Devices & Digital Communications - 2
A sample of germanium is doped to the extent of 1014 donor atoms/cm3 and 7 x 1013 acceptor atoms/cm3. The resistivity of pure germanium is 60 Ω cm. If the applied electric field is 2V/cm, then the total conduction current density is given by
An abrupt p-n junction diode is formed with two sides of resistivities 2 Ω cm in the p-side and 1 Ω cm on the n-side. The height of potential energy barrier for Ge (germanium) is
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An ideal p-channel MOSFET has the parameters. W = 15 μm, μp = 300 cm2A/ sec, L = 15 [μm, tox = 350 A° and VT = -0.80 V. If transistor is operating in non saturation region at VSD = 0.5 V, then the value of gm is ____________ μS
A Varactor diode has depletion capacitance given by
where V is the bias voltage on the diode in volts. The diode is placed in parallel with a 0.75 (μH inductor which forms part of the frequency modulator. The required bias voltage so that the inductor diode combination resonates at 100 MHz is given by
Figure shown is a battery charging circuit
If Vs = 120 sinωt, the conduction angle of the diode D is given by (i.e. in positive half cycle for how much total angle it conducts)
If the magnitude of the zener voltage is 4.9 V, what will be the current in the circuit? (The reverse saturation current is 5 μA).
In the BJT current source shown in figure, the diode voltage and the transistor base to emitter voltage are equal. If base current is neglected then collector current is __________ mA
Two p-n germanium diodes are connected in series opposing. A 5V battery is impressed upon this series arrangement.
The voltage across reverse bias p-n junction (Assume that the magnitude of the zener voltage is greater than 5V.
The parameters of an FET are gm = 3 mA/V, rd = 30 k, RL = 3k as an source follower load. The output impedance is given by
If R2 is replaced by a capacitor, then circuit behaves as
The N-channel FET having lDSS = 1 mA Vp = -1 V. The value of R1 when quiescent drain to ground voltage is 10 V
Diode current in circuit below for R = 20 kΩ is? When
The ramp signal m(t) = at is applied to a delta modulator with sampling period “Ts” and step size “δ” then slope over load distortion would occur if,
Consider the transistor circuit given below having an ideal diode:
Q.
The minimum value of hfe required neglecting saturation operation and assuming an ideal diode is
Consider the transistor circuit given below having an ideal diode:
Q.
The maximum temperature at which the inverter would operate properly if the reverse saturation current at 25°C is 5 |xA is
In a PCM system , if the quantization levels are increased from 2 to 16, the relative BW requirement will
A random variable has following probability function.
Q.
Value of a is
A random variable has following probability function.
Q.
Value of P (X < 4)
For a low pass filter circuit shown below if auto correlation function of input process x(t) is given by, 
= 5 δ(t) then,
Q.
PSD of the output random process is
For a low pass filter circuit shown below if auto correlation function of input process x(t) is given by, = 5 δ(t) then,
Q.
Average power of output random process is
E(x) for joint probability function of 2 discrete random variables x and y given as
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