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MCQ Practice Test & Solutions: Test: Basic FET Circuits (15 Questions)

You can prepare effectively for Electrical Engineering (EE) GATE Electrical Engineering (EE) Mock Test Series 2027 with this dedicated MCQ Practice Test (available with solutions) on the important topic of "Test: Basic FET Circuits". These 15 questions have been designed by the experts with the latest curriculum of Electrical Engineering (EE) 2026, to help you master the concept.

Test Highlights:

  • - Format: Multiple Choice Questions (MCQ)
  • - Duration: 45 minutes
  • - Number of Questions: 15

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Test: Basic FET Circuits - Question 1

In the circuit shown in fig. the transistor parameters are as follows:

Threshold voltage VTN = 2V

Conduction parameter Kn = 0.5mA/V2

Que:

VGS = ?

Detailed Solution: Question 1

Assume that transistor in saturation region

Test: Basic FET Circuits - Question 2

In the circuit shown in fig. the transistor parameters are as follows:

Threshold voltage VTN = 2V

Conduction parameter Kn = 0.5mA/V2

Que:

ID =?

Detailed Solution: Question 2

Test: Basic FET Circuits - Question 3

In the circuit shown in fig. the transistor parameters are as follows:

Threshold voltage VTN = 2V

Conduction parameter Kn = 0.5mA/V2

Que:

VDS = ?

Detailed Solution: Question 3

Test: Basic FET Circuits - Question 4

In the circuit shown in fig. the transistor parameter are as follows:

Que:

VGS =?

Detailed Solution: Question 4

Test: Basic FET Circuits - Question 5

In the circuit shown in fig. the transistor parameter are as follows:

Que: ID = ?

Detailed Solution: Question 5

Test: Basic FET Circuits - Question 6

The parameter of the transistor in fig.  are VTN = 1.2 V, Kn = 0.5mA / V2 and λ = 0. The voltage VDS is

Detailed Solution: Question 6

VGS = 1.52 V, VGS = VDS

Test: Basic FET Circuits - Question 7

The parameter of the transistor in fig. are VTN = 0.6  V  and Kn = 0.2 mA / V2 . The voltage VS is

Detailed Solution: Question 7

Test: Basic FET Circuits - Question 8

In the circuit of fig. the transistor parameters are VTN = 1.7 V and Kn = 0.4mA / V2.

If ID = 0.8 mA and VD = 1 V, then value of resistor RS and RD are respectively

Detailed Solution: Question 8

Test: Basic FET Circuits - Question 9

In the circuit of fig. the PMOS transistor has parameter VTP = 1.5 V, kp' =  25 μA/V2 , L = 4 μm and λ = 0.If ID = 0.1 mA and VSD = 2.5 V, then value of W will be

Detailed Solution: Question 9

Test: Basic FET Circuits - Question 10

The PMOS transistor in fig. has parameters

Detailed Solution: Question 10

Test: Basic FET Circuits - Question 11

The parameters for the transistor in circuit of fig. are VTN = 2 V and Kn = 0.2mA / V2. The power dissipated in the transistor is

Detailed Solution: Question 11

Assume transistor in saturation

Test: Basic FET Circuits - Question 12

Consider the circuit shown in fig.

The both transistor have parameter as follows

VTN = 0.8V, kn' = 30 μA/V2

Que: If the width-to-length ratios of M1 and M2 are

(W/L)1 = (W/L)2 = 40

The output Vo is

Detailed Solution: Question 12

For both transistor VDS = VGS ,

Test: Basic FET Circuits - Question 13

Consider the circuit shown in fig.

The both transistor have parameter as follows

VTN = 0.8V, kn' = 30 μA/V2

Que: If the ratio is (W/L)1 = 40 and (W/L)2 = 15, then v0 is

Detailed Solution: Question 13

Test: Basic FET Circuits - Question 14

In the circuit of fig. the transistor parameters are VTN =1 V and kn' = 36 μA/ V2 .If ID = 0.5 mA, V1 = 5 V and V= 2 V then the width to-length ratio required in each transistor is

 

Detailed Solution: Question 14

Each transistor is biased in saturation because

Test: Basic FET Circuits - Question 15

The transistors in the circuit of fig. have parameter  VTN = 0.8V, kn' = 40 μA/V2 and λ = 0 .The width-to-length ratio of M2 is (W/L)2 = 1. If Vo = 0.10V when vi = 5 V, then (W/L)1 for M1 is

Detailed Solution: Question 15

M2 is in saturation because

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