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Computer Science Engineering (CSE) Exam  >  Computer Science Engineering (CSE) Tests  >  Test: Dynamic RAM Interfacing - Computer Science Engineering (CSE) MCQ

Test: Dynamic RAM Interfacing - Computer Science Engineering (CSE) MCQ


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10 Questions MCQ Test - Test: Dynamic RAM Interfacing

Test: Dynamic RAM Interfacing for Computer Science Engineering (CSE) 2024 is part of Computer Science Engineering (CSE) preparation. The Test: Dynamic RAM Interfacing questions and answers have been prepared according to the Computer Science Engineering (CSE) exam syllabus.The Test: Dynamic RAM Interfacing MCQs are made for Computer Science Engineering (CSE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Dynamic RAM Interfacing below.
Solutions of Test: Dynamic RAM Interfacing questions in English are available as part of our course for Computer Science Engineering (CSE) & Test: Dynamic RAM Interfacing solutions in Hindi for Computer Science Engineering (CSE) course. Download more important topics, notes, lectures and mock test series for Computer Science Engineering (CSE) Exam by signing up for free. Attempt Test: Dynamic RAM Interfacing | 10 questions in 10 minutes | Mock test for Computer Science Engineering (CSE) preparation | Free important questions MCQ to study for Computer Science Engineering (CSE) Exam | Download free PDF with solutions
Test: Dynamic RAM Interfacing - Question 1
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 The advantage of dynamic RAM is

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The dynamic RAM is advantageous than the static RAM as it has higher packing density, lower cost and less power consumption.

Test: Dynamic RAM Interfacing - Question 2
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Whenever a large memory is required in a microcomputer system, the memory subsystem is generally designed using

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Dynamic RAM is preferred for large memory.

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Test: Dynamic RAM Interfacing - Question 3
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 If a typical static RAM cell require 6 transistors then corresponding dynamic RAM requires

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The hardware complexity of dynamic RAM is lesser than that of static RAM.

Test: Dynamic RAM Interfacing - Question 4
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To store the charge as a representation of data, the basic dynamic RAM cell uses
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The basic dynamic RAM cell uses capacitance to store the charge as a representation of data. This capacitor is manufactured as a diode that is reverse biased so that the storage capacitance is obtained.

Test: Dynamic RAM Interfacing - Question 5
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The process of refreshing the data in the RAM to reduce the possibility of data loss is known as
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The data storage in RAM which is capacitance (reverse-biased diode) may have a leakage current that tends to discharge the capacitor giving rise to possibility of data loss. To avoid this, the data must be refreshed after a fixed time interval regularly.

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 The field in which dynamic RAM is more complicated than static RAM is
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The refresh mechanism and the additional hardware required makes the interfacing circuit of dynamic RAM more complicated than that of static RAM.

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 Memory refresh activity is
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The refresh operation is independent regular activity that is initialised and carried out by the refresh mechanism.

Test: Dynamic RAM Interfacing - Question 8
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The number of memory chips that are enabled at a time for refresh activity is
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More than one memory chip can be enabled at a time for refresh activity to reduce the number of total memory refresh cycles.

Test: Dynamic RAM Interfacing - Question 9
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A timer that derives pulse for refreshing action or time for which a dynamic RAM cell can hold data charge level practically constant is
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Refresh timer derives a pulse for refreshing action after each refresh interval which can be qualitatively defined as the time for which a dynamic RAM cell can hold data charge level practically constant.

Test: Dynamic RAM Interfacing - Question 10
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If ‘n’ denotes the number of rows that are to be refreshed in a single refresh interval, ‘td’ denotes the range of time it may take then, refresh time (tr) can be defined as
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Refresh time is the ratio of time duration taken for refreshing to the number of rows that are refreshed. Refresh frequency is the reciprocal of refresh time.

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Important Questions for Dynamic RAM Interfacing

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