Test: Electronic Devices & Circuits - 6 - Electrical Engineering (EE) MCQ

If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.

Reason (R): Diffusion of carriers occurs in semiconductors.

No load d.c. output will be least in case of

When an electron breaks a covalent bond and moves away,

A photo diode is

In which condition does BJT behave like a closed switch?

Germanium and Si phosphorus have their maximum spectral response in the

No load d.c. output will be least in case of

When an electron breaks a covalent bond and moves away,

A photo diode is

Germanium and Si phosphorus have their maximum spectral response in the

In which condition does BJT behave like a closed switch?

High purity copper is obtained by

Photo electric emission can occur only if the frequency of light is more than threshold frequency.

In a JFET the width of channel is controlled by

The unit of thermal resistance of a semi-conductor device is

Figure represents a

For generating 1 MHz frequency signal, the most suitable circuit is

A doped semi-conductor is called

In n type MOSFET, the substrate

The first and the last critical frequency of an RC driving point impedance function must respectively by

The diffusion current is proportional to