Test: Basic FET Amplifiers- 2

Question 1

In the common drain amplifier shown below, if R_S= 4 KΩ, R_G= 10 MΩ, μ = 50 and r_d= 35 KΩ then the voltage gain A_v of the amplifier is approximately equal to

Accepted Answer

0.84

Answer

0.66

Answer

0.77

Answer

0.92

Question 2

The value of V₀/V_in for the circuit shown below is (Assume M₁ in saturation)

Accepted Answer

Answer

Answer

Answer

Question 3

Consider the following statements:
1. In most linear applications of field-effect transistors the device is operated in the. constant-current portion of its output characteristics.
2. In the region before pinch-off, where V_DS is small, the FET is useful as a voltage variable resistors (VVR).
3. The VVR can be used in AGC amplifier to vary the voltage gain of multistage amplifier.

Q. Which of the above statements is/are correct?

Accepted Answer

1, 2 and 3

Answer

2 only

Answer

1 and 2 only

Answer

2 and 3 only

Question 4

In the saturation region, the I_D- V_GScharacteristics of a MOSFET are

Accepted Answer

quadratic

Answer

linear

Answer

exponential

Answer

hyperbolic

Question 5

The source-bias circuit provides DC biasing for the FET. The resistance from gate to ground (R_S) in that circuit is necessary because, without it,

Accepted Answer

there will be no DC potential established at the gate terminal.

Answer

the input time-constant will become infinite.

Answer

the input AC signal will have no path to ground.

Answer

the circuit will actually work fine; R_g is not really necessary.

Question 6

In an FET common-source high frequency amplifier, which one of the following is the correct expression for input capacitance C_i ?

Accepted Answer

C_i = C_gs+ (1 - A_V)C_gd

Answer

C_i = C_gs+ (1 - 1/A_V)C_gd

Answer

C_i = C_gd+ (1 - A_V)C_gs

Answer

C_i = C_gd+ (1 - A_V)C_gs

Question 7

A JFET is set up as a source follower. Given, μ = 200, r_d = 100 kΩ and source load resistance R_L = 1 kΩ. The output resistance R₀ is given approximately by

Accepted Answer

332 &Omega;

Answer

1000 &Omega;

Answer

500 &Omega;

Answer

666 &Omega;

Question 8

A FET tuned amplifier with g_m = 5 mA/V, r_d = 20 kΩ has a resonant impedance of 20 kΩ. The gain at resonance is given by

Accepted Answer

50

Answer

200

Answer

100

Answer

25

Question 9

The unity gain bandwidth f_T of a JFET is given by

Accepted Answer

C_sg/2πfg_m

Answer

g_m/2πC_sg

Answer

C_sg/2πg_m

Answer

g_m/2πfC_sg

Question 10

The transconductance for a JFET having I_DSS= 8 mA, V_P = -4 V and biased to operate at V_GS = - 1.8 volt will be given by

Accepted Answer

2.2 mS

Answer

4.4 mS

Answer

3.3 mS

Answer

1.1 mS

Basic FET Amplifiers- 2 - Free MCQ Practice Test with solutions, GATE EE

MCQ Practice Test & Solutions: Test: Basic FET Amplifiers- 2 (10 Questions)

In the common drain amplifier shown below, if R_S= 4 KΩ, R_G= 10 MΩ, μ = 50 and r_d= 35 KΩ then the voltage gain A_v of the amplifier is approximately equal to

The value of V₀/V_in for the circuit shown below is (Assume M₁ in saturation)

In the saturation region, the I_D- V_GScharacteristics of a MOSFET are

The source-bias circuit provides DC biasing for the FET. The resistance from gate to ground (R_S) in that circuit is necessary because, without it,

In an FET common-source high frequency amplifier, which one of the following is the correct expression for input capacitance C_i ?

A JFET is set up as a source follower. Given, μ = 200, r_d = 100 kΩ and source load resistance R_L = 1 kΩ. The output resistance R₀ is given approximately by

A FET tuned amplifier with g_m = 5 mA/V, r_d = 20 kΩ has a resonant impedance of 20 kΩ. The gain at resonance is given by

The unity gain bandwidth f_T of a JFET is given by

The transconductance for a JFET having I_DSS= 8 mA, V_P = -4 V and biased to operate at V_GS = - 1.8 volt will be given by

Topicwise Question Bank for Electrical Engineering

Topicwise Question Bank for Electrical Engineering

Top Courses for Electrical Engineering (EE)

About this Electrical Engineering (EE) Practice Test

Explore more Electrical Engineering (EE) Study Resources

Basic FET Amplifiers- 2 - Free MCQ Practice Test with solutions, GATE EE

MCQ Practice Test & Solutions: Test: Basic FET Amplifiers- 2 (10 Questions)

In the common drain amplifier shown below, if RS = 4 KΩ, RG = 10 MΩ, μ = 50 and rd = 35 KΩ then the voltage gain Av of the amplifier is approximately equal to

The value of V0/Vin for the circuit shown below is (Assume M1 in saturation)

In the saturation region, the ID - VGS characteristics of a MOSFET are

The source-bias circuit provides DC biasing for the FET. The resistance from gate to ground (RS) in that circuit is necessary because, without it,

In an FET common-source high frequency amplifier, which one of the following is the correct expression for input capacitance Ci ?

A JFET is set up as a source follower. Given, μ = 200, rd = 100 kΩ and source load resistance RL = 1 kΩ. The output resistance R0 is given approximately by

A FET tuned amplifier with gm = 5 mA/V, rd = 20 kΩ has a resonant impedance of 20 kΩ. The gain at resonance is given by

The unity gain bandwidth fT of a JFET is given by

The transconductance for a JFET having IDSS = 8 mA, VP = -4 V and biased to operate at VGS = - 1.8 volt will be given by

Topicwise Question Bank for Electrical Engineering

Topicwise Question Bank for Electrical Engineering

Top Courses for Electrical Engineering (EE)

About this Electrical Engineering (EE) Practice Test

Explore more Electrical Engineering (EE) Study Resources

In the common drain amplifier shown below, if R_S= 4 KΩ, R_G= 10 MΩ, μ = 50 and r_d= 35 KΩ then the voltage gain A_v of the amplifier is approximately equal to

The value of V₀/V_in for the circuit shown below is (Assume M₁ in saturation)

In the saturation region, the I_D- V_GScharacteristics of a MOSFET are

The source-bias circuit provides DC biasing for the FET. The resistance from gate to ground (R_S) in that circuit is necessary because, without it,

In an FET common-source high frequency amplifier, which one of the following is the correct expression for input capacitance C_i ?

A JFET is set up as a source follower. Given, μ = 200, r_d = 100 kΩ and source load resistance R_L = 1 kΩ. The output resistance R₀ is given approximately by

A FET tuned amplifier with g_m = 5 mA/V, r_d = 20 kΩ has a resonant impedance of 20 kΩ. The gain at resonance is given by

The unity gain bandwidth f_T of a JFET is given by

The transconductance for a JFET having I_DSS= 8 mA, V_P = -4 V and biased to operate at V_GS = - 1.8 volt will be given by