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Electronics and Communication Engineering (ECE) Exam > Electronics and Communication Engineering (ECE) Tests > Topicwise Question Bank for Electronics Engineering > Test: MOSFET - Electronics and Communication Engineering (ECE) MCQ

Test: MOSFET - Electronics and Communication Engineering (ECE) MCQ

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20 Questions MCQ Test Topicwise Question Bank for Electronics Engineering - Test: MOSFET

Test: MOSFET for Electronics and Communication Engineering (ECE) 2024 is part of Topicwise Question Bank for Electronics Engineering preparation. The Test: MOSFET questions and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus.The Test: MOSFET MCQs are made for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: MOSFET below.

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Test: MOSFET - Question 1

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The MOSFET combines the areas of _ & ___

A.
field effect & MOS technology
B.
semiconductor & TTL
C.
mos technology & CMOS technology
D.
none of the mentioned

Detailed Solution for Test: MOSFET - Question 1

It is an enhancement of the FET devices (field effect) using MOS technology.

Test: MOSFET - Question 2

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Which of the following terminals does not belong to the MOSFET?

A.
Drain
B.
Gate
C.
Base
D.
Source

Detailed Solution for Test: MOSFET - Question 2

MOSFET is a three terminal device D, G & S.

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Test: MOSFET - Question 3

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Choose the correct statement

A.
MOSFET is a uncontrolled device
B.
MOSFET is a voltage controlled device
C.
MOSFET is a current controlled device
D.
MOSFET is a temperature controlled device

Detailed Solution for Test: MOSFET - Question 3

It is a voltage controlled device.

Test: MOSFET - Question 4

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Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT

A.
Both i & ii
B.
Both ii & iv
C.
Both i & iv
D.
Only ii

Detailed Solution for Test: MOSFET - Question 4

MOSFET requires gate signals with lower amplitude as compared to BJTs & has lower switching losses.

Test: MOSFET - Question 5

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Choose the correct statement

A.
MOSFET is a unipolar, voltage controlled, two terminal device
B.
MOSFET is a bipolar, current controlled, three terminal device
C.
MOSFET is a unipolar, voltage controlled, three terminal device
D.
MOSFET is a bipolar, current controlled, two terminal device

Detailed Solution for Test: MOSFET - Question 5

MOSFET is a three terminal device, Gate, source & drain. It is voltage controlled unlike the BJT & only electron current flows.

Test: MOSFET - Question 6

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The arrow on the symbol of MOSFET indicates

A.
that it is a N-channel MOSFET
B.
the direction of electrons
C.
the direction of conventional current flow
D.
that it is a P-channel MOSFET

Detailed Solution for Test: MOSFET - Question 6

The arrow is to indicate the direction of electrons (opposite to the direction of conventional current flow).

Test: MOSFET - Question 7

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The controlling parameter in MOSFET is

A.
Vds
B.
Vgs
C.
Ig
D.
Is

Detailed Solution for Test: MOSFET - Question 7

Correct Answer :- b

Explanation : The gate to source voltage is the controlling parameter in a MOSFET.

Test: MOSFET - Question 8

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In the internal structure of a MOSFET, a parasitic BJT exists between the

A.
source & gate terminals
B.
source & drain terminals
C.
drain & gate terminals
D.
there is no parasitic BJT in MOSFET

Detailed Solution for Test: MOSFET - Question 8

Examine the internal structure of a MOSFET, notice the n-p-n structure between the drain & source. A p-channel MOSFET will have a p-n-p structure.

Test: MOSFET - Question 9

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In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the

A.
minimum voltage to induce a n-channel/p-channel for conduction
B.
minimum voltage till which temperature is constant
C.
minimum voltage to turn off the device
D.
none of the above mentioned is true

Detailed Solution for Test: MOSFET - Question 9

It is the minimum voltage to induce a n-channel/p-channel which will allow the device to conduct electrically through its length.

Test: MOSFET - Question 10

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The output characteristics of a MOSFET, is a plot of

A.
Id as a function of Vgs with Vds as a parameter
B.
Id as a function of Vds with Vgs as a parameter
C.
Ig as a function of Vgs with Vds as a parameter
D.
Ig as a function of Vds with Vgs as a parameter

Detailed Solution for Test: MOSFET - Question 10

It is Id vs Vds which are plotted for different values of Vgs (gate to source voltage).

Test: MOSFET - Question 11

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In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is

A.
Vds/Ig
B.
Vds/Id
C.
0
D.
∞

Detailed Solution for Test: MOSFET - Question 11

The o/p characteristics Is a plot of Id verses Vds, which for low values of Vds is almost constant. Hence, the on-state resistance is constant & the slop is its constant value.

Test: MOSFET - Question 12

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At turn-on the initial delay or turn on delay is the time required for the

A.
input inductance to charge to the threshold value
B.
input capacitance to charge to the threshold value
C.
input inductance to discharge to the threshold value
D.
input capacitance to discharge to the threshold value

Detailed Solution for Test: MOSFET - Question 12

It is the time required for the input capacitance to charge to the threshold value, which depends on the device configuration. The device can start conducting only after this time.

Test: MOSFET - Question 13

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Choose the correct statement

A.
MOSFET suffers from secondary breakdown problems
B.
MOSFET has lower switching losses as compared to other devices
C.
MOSFET has high value of on-state resistance as compared to other devices
D.
All of the mentioned

Detailed Solution for Test: MOSFET - Question 13

MOSFET has lower switching losses due to its unipolar nature & less turn off time. All of the other statements are false.

Test: MOSFET - Question 14

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Which among the following devices is the most suited for high frequency applications?

A.
BJT
B.
IGBT
C.
MOSFET
D.
SCR

Detailed Solution for Test: MOSFET - Question 14

MOSFET has the least switching losses among the rest of the devices.

Test: MOSFET - Question 15

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Choose the correct statement

A.
MOSFET has a positive temperature co-efficient
B.
MOSFET has a high gate circuit impedance
C.
MOSFET is a voltage controlled device
D.
All of the mentioned

Detailed Solution for Test: MOSFET - Question 15

MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.

Test: MOSFET - Question 16

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Consider an ideal MOSFET. If Vgs = 0V, then Id = ?

A.
Zero
B.
Maximum
C.
Id(on)
D.
Idd

Detailed Solution for Test: MOSFET - Question 16

Gate current = 0 so device is off (ideally).

Test: MOSFET - Question 17

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For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of voltage Vp

A.
4.08
B.
8.16
C.
16.32
D.
0V

Detailed Solution for Test: MOSFET - Question 17

Use Id = Idd x [1-Vgs/Vp]².

Test: MOSFET - Question 18

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How does the MOSFET differ from the JFET?

A.
JFET has a p-n junction
B.
They are both the same
C.
JFET is small in size
D.
MOSFET has a base terminal

Test: MOSFET - Question 19

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The basic advantage of the CMOS technology is that

A.
It is easily available
B.
It has small size
C.
It has lower power consumption
D.
It has better switching capabilities

Detailed Solution for Test: MOSFET - Question 19

Complementary MOS consumes very less power as compared to all the earlier devices.

Test: MOSFET - Question 20

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The N-channel MOSFET is considered better than the P-channel MOSFET due to its

A.
low noise levels
B.
TTL compatibility
C.
lower input impedance
D.
faster operation

Detailed Solution for Test: MOSFET - Question 20

The N-channel are faster than the P-channel type.

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