The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm2/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm2/V-s, respectively. Assuming ni = 2.5 x 1013 cm-3 for germanium and ni = 1.5 x 1010 cm-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given by
What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?
Assume at 300°K, ni = 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-s
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In a p-type semiconductor, p = 1016/cm2, and μp = 400 cm2/V-s. If a magnetic field (B) of 5 x 10-4 Weber/cm2 is applied in the x-direction, and an electric field of 2000 V/m is applied in +y direction. The value of electric field caused due to the “Hall effect” is
25 docs|247 tests
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25 docs|247 tests
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