Test: Semiconductor Diodes - Electrical Engineering (EE) MCQ

Due to the density gradient across the junction, holes will initially diffuse to the right across the junction, and electrons to the left. The positive holes which neutralizes the acceptor ions near the junction in the p-type silicon disappears as a result of combination with electrons which have diffused across the junction. Similarly, electrons in n-type semiconductor combines with holes.

The large reverse current flow in zener diode is due to rupturing-off or tearing-off of covalent bends within the depletion layer. This phenomena is called zener breakdown phenomena, It is due to large electric field intensity.

The work function of a metal represents the minimum amount of energy that must be given to the fastest-moving electron at the absolute zero of temperature in order for this electron to be able to escape from the metal. Hence, low work function (E_w) is required for thermionic emission.

Width of depletion layer,  
Hence, when forward bias is applied to a p-n junction diode, width of the depletion layer is reduced i.e. potential barrier is decreased

In a p-n junction tunnel diode, the depletion layer width is negligible and therefore, the charge carriers will be penetrating the depletion layer almost at the speed of light and this property is called tunnelling of charge carriers across the junction.

The energy level diagram for a semiconductor is shown below.

E_G is called “band gap” or "forbidden energy gap” which lies between the valence band and the conduction band.

The barrier potential of the "Germanium" diode is 0.3 V.

In an intrinsic semiconductor, as the temperature increases mobility is slightly reduced since mobility of charge carrier is inversely proportional to temperature. This will slightly reduce the conductivity. But, due to temperature effect, large number of covalent bonds are broken which creates electrons and holes and this increases the conductivity by a larger value. As a result of this resistivity is decreased