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QUESTION: 1

If α = 0.98. I_{CO} = 6 μA and l_{R} = 100μA for a transistor, then the value of l_{c} will be

Solution:

QUESTION: 2

For the given input, the output waveform across the diode shown in the figure. will be

Solution:

The diode will not conduct in the negative half of the wave and while it conducts, there will be a small voltage drop across, it shown as 0.06 V on option (D)

QUESTION: 3

Which of the following option correctly represents the dependence of mobility with temperature?

Solution:

Mobility μ_{h} & μ_{p} have a temp. dependence & is approximately expressed as μ ∝ T^{-3/2}. Opyion (D) is the correct option.

QUESTION: 4

The graph of [logρ vs. 1/T] can be expressed as:-

Solution:

As (ρ) resistivity = (constant).exp (+E_{g}/2KT)

Log ρ = log (constant) + E_{g}/2KT

QUESTION: 5

Which is correct logic diagram of the simplified form of given boolean expression

Solution:

QUESTION: 6

F(ABC) = (A + B + AB) (A + C + AC) has simplified expression

Solution:

F(A, BC) = [A + B(1 +A)] [A +C (1+A)]

= (A+B) (A+C) = A + AB + BC + AC

= A(A+B) + BC+AC

= A + AC + BC

= A(1+C) + AC

= A + BC

QUESTION: 7

An OPAMP has a slew rate of 5 V/μs. The largest sinewave output voltage possible at a frequency of 1 MHz is

Solution:

V = V_{m} sin ωt

QUESTION: 8

For the logic circuit shown in the figure below, the output Y is equal to

Solution:

QUESTION: 9

The output voltage of an OPAMP for input voltage of V_{i1} = 150 μV , V_{i2} = 140μV if the amplifier has a differential gain of A_{d} = 4000 and the value of CMRR is 100, is

Solution:

QUESTION: 10

A non-inverting op-amp summer is shown in the figure. The output voltage V_{o} will be

Solution:

= - 6 + 6 + 3 sin 100t = 3 sin 100 t

QUESTION: 11

The Q point of the transistor circuit given below is

Solution:

Using approximation

So

...(i)

QUESTION: 12

The saturation current for the given network is

Solution:

(I_{c}) saturation =

20/3 mA= 6.67mA

QUESTION: 13

The value of V_{CE} for the voltage - divider bias configuration is

Solution:

Testing the condition

Solving for V_{B} we have

Apply KVL around base emitter loop

For collector - emitter loop

QUESTION: 14

For the CB circuit shown below in figure ; The value of ‘ I_{c} ’ will be:- ( Assume The transistor to be of silicon)

Solution:

QUESTION: 15

For the circuit given below; calculate the value of V_{CB} (Assuming the transistor to be of silicon.

Solution:

*Multiple options can be correct

QUESTION: 16

Choose the correct statement

Solution:

We note that

so putting in eq. (1), we get

and

*Multiple options can be correct

QUESTION: 17

For the given circuit we have R_{1} = 6 kΩ, R_{f} = 24 kΩ, V_{i} = 1 V and load resistor of 6 kΩ. Then

Solution:

*Multiple options can be correct

QUESTION: 18

Fora differential amplifier in which the signal applied to inverting and non inverting term inals are respectively = - 0.45 m V and + 0.48 m V and A _{diff} = 10^{6} and CMRR = 80 dB.

Solution:

So,

The differential input is

V_{dff} = V_{2} - V_{1} = - 0.48 - (0.45) mV = -.03mV and common mode input is

Total output voltage

*Multiple options can be correct

QUESTION: 19

In a given n-type silicon material, the donar concentration is 1 atom per 2 * 10^{8} silicon atoms. Assuming that the effective mass of the electron is equal to its true mass. Given that density of atoms in silicon = 5 * 10^{28} atoms/m^{3}. Which of the following statement is correct.

Solution:

The donor consecration will be calculated first. As there are 1 atoms per 2 x 10^{8 }silicon atoms, there will be

donor atoms per met^{3}. This density of doner

N_{d} = 2-5 x 10^{20} per m^{3}

We know that Fermi level will coincides with the edge of conduction band if N_{d} = N_{c}, where

with

But given that effective mass of the electron is equal to its true mass, i.e.,

m_{e}* = m_{e}

so that

N_{C} = 4.82 x 10^{21} x T^{3/2}

Putting it equal to N_{d}, we get

or

T = 0.14 K

*Multiple options can be correct

QUESTION: 20

For the circuit shown below:-

Which of the following statement(s) is/are correct?

Solution:

*Answer can only contain numeric values

QUESTION: 21

If a transistor has again of 20 dB, then the ratio of output to input power is_____.

Solution:

*Answer can only contain numeric values

QUESTION: 22

An CE transistor amplifier has a collector current of 1.0mA when its base current is 25μA at room temp. What is the value of its input resistance (in ohms)?

Solution:

*Answer can only contain numeric values

QUESTION: 23

A transistor having α = 0.99 & V_{BE} = 0.7V is used in the circuit shown figure. What is the value of collector current (in mA)?

Solution:

Taking KVL for the base circuit;

*Answer can only contain numeric values

QUESTION: 24

For the circuit,

If the saturation current is 10^{-16A} . Find the value of base-emitter voltage (in V).

Solution:

Here

*Answer can only contain numeric values

QUESTION: 25

If then calculate the value of ?

Solution:

*Answer can only contain numeric values

QUESTION: 26

A String under a tension of 129.6 N produces 10 beats per sec when is vibrated along with a tuning frok. when tension in the string is increased to 160N, it sounds in unison with the same tuning frok. calculate the fundamental frequency of a tuning frok? (in Hz)

Solution:

As here the tension in the wire is changed , so its fundamental frequency

Now with increase in tension,

(K√T) will increase & beats & decreasing to zero when

T = 160N (as union means frequencies are equal)

...(i)

...(ii)

Substituting the value of ‘k’ from second equation in first

f - 0.9 f = 10

f = 100Hz

*Answer can only contain numeric values

QUESTION: 27

A column of air at 51^{o}C & a tuning frok produce 4 beats per sec. when sounded togther. As the temperature of the air column is decreased, the number of beats sec tends to decrease & when the temperature is 16^{o}c , the two produce 1 beat per sec find the frequency of the tuning frok (in Hz)

Solution:

As for a given column of air f α v & V α √T

So ; f = k√T

If the frequency of the frok is ‘f'

f - k √T = 4...(i)

OR

k√T - f = 4 ...(ii)

But as with decrease in temperature beats decrease, first choice is not permissible ;

i.e (f+4) = 18k ...(iii)

i.e (f+1) = 17 k ...(iv)

So dividing eq^{n }(3) & (4) we get

*Answer can only contain numeric values

QUESTION: 28

Calculate the thickness of a soap bubble film (refractive index μ =1.3) that will result in constructive interference in the reflected light if the film is illuminated with light whose wavelength in free space is 5000 A^{0} (Thickness (+) is in A^{o})?

Solution:

The condition for constructive interference in the reflected light or fro the brightness of soap bubble film is:-

When, n = 0 ,1 ,2 ,3 ..............

If the light is incident normally on the film, then r = 0

& cos r = 1

putting the given values , we get:-

for least thickness of the film (n=1)

∴ least thickness of the film

t = 961.53 A^{0}

*Answer can only contain numeric values

QUESTION: 29

In the given circuit V_{cc} = 8V and β = 80 for the n-p-n transistor.The collector voltage V_{c }(in volts) is_____.

Solution:

Applying KVL

5 — 100I_{B} - 0.7 = 0

4.3/100 = I_{B}

I_{B }= 43mA

I_{c }= 80X 43mA

*Answer can only contain numeric values

QUESTION: 30

The maximum value of RL so that zener diode is 'ON ' is______(in kΩ).

Solution:

= 12.5KΩ

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