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If α = 0.98. I_{CO} = 6 μA and l_{R} = 100μA for a transistor, then the value of l_{c} will be
For the given input, the output waveform across the diode shown in the figure. will be
The diode will not conduct in the negative half of the wave and while it conducts, there will be a small voltage drop across, it shown as 0.06 V on option (D)
Which of the following option correctly represents the dependence of mobility with temperature?
Mobility μ_{h} & μ_{p} have a temp. dependence & is approximately expressed as μ ∝ T^{3/2}. Opyion (D) is the correct option.
As (ρ) resistivity = (constant).exp (+E_{g}/2KT)
Log ρ = log (constant) + E_{g}/2KT
Which is correct logic diagram of the simplified form of given boolean expression
F(ABC) = (A + B + AB) (A + C + AC) has simplified expression
F(A, BC) = [A + B(1 +A)] [A +C (1+A)]
= (A+B) (A+C) = A + AB + BC + AC
= A(A+B) + BC+AC
= A + AC + BC
= A(1+C) + AC
= A + BC
An OPAMP has a slew rate of 5 V/μs. The largest sinewave output voltage possible at a frequency of 1 MHz is
V = V_{m} sin ωt
For the logic circuit shown in the figure below, the output Y is equal to
The output voltage of an OPAMP for input voltage of V_{i1} = 150 μV , V_{i2} = 140μV if the amplifier has a differential gain of A_{d} = 4000 and the value of CMRR is 100, is
A noninverting opamp summer is shown in the figure. The output voltage V_{o} will be
=  6 + 6 + 3 sin 100t = 3 sin 100 t
Using approximation
So
...(i)
(I_{c}) saturation =
20/3 mA= 6.67mA
The value of V_{CE} for the voltage  divider bias configuration is
Testing the condition
Solving for V_{B} we have
Apply KVL around base emitter loop
For collector  emitter loop
For the CB circuit shown below in figure ; The value of ‘ I_{c} ’ will be: ( Assume The transistor to be of silicon)
For the circuit given below; calculate the value of V_{CB} (Assuming the transistor to be of silicon.
We note that
so putting in eq. (1), we get
and
For the given circuit we have R_{1} = 6 kΩ, R_{f} = 24 kΩ, V_{i} = 1 V and load resistor of 6 kΩ. Then
Fora differential amplifier in which the signal applied to inverting and non inverting term inals are respectively =  0.45 m V and + 0.48 m V and A _{diff} = 10^{6} and CMRR = 80 dB.
So,
The differential input is
V_{dff} = V_{2}  V_{1} =  0.48  (0.45) mV = .03mV and common mode input is
Total output voltage
In a given ntype silicon material, the donar concentration is 1 atom per 2 * 10^{8} silicon atoms. Assuming that the effective mass of the electron is equal to its true mass. Given that density of atoms in silicon = 5 * 10^{28} atoms/m^{3}. Which of the following statement is correct.
The donor consecration will be calculated first. As there are 1 atoms per 2 x 10^{8 }silicon atoms, there will be
donor atoms per met^{3}. This density of doner
N_{d} = 25 x 10^{20} per m^{3}
We know that Fermi level will coincides with the edge of conduction band if N_{d} = N_{c}, where
with
But given that effective mass of the electron is equal to its true mass, i.e.,
m_{e}* = m_{e}
so that
N_{C} = 4.82 x 10^{21} x T^{3/2}
Putting it equal to N_{d}, we get
or
T = 0.14 K
For the circuit shown below:
Which of the following statement(s) is/are correct?
If a transistor has again of 20 dB, then the ratio of output to input power is_____.
An CE transistor amplifier has a collector current of 1.0mA when its base current is 25μA at room temp. What is the value of its input resistance (in ohms)?
A transistor having α = 0.99 & V_{BE} = 0.7V is used in the circuit shown figure. What is the value of collector current (in mA)?
Taking KVL for the base circuit;
For the circuit,
If the saturation current is 10^{16A} . Find the value of baseemitter voltage (in V).
Here
A String under a tension of 129.6 N produces 10 beats per sec when is vibrated along with a tuning frok. when tension in the string is increased to 160N, it sounds in unison with the same tuning frok. calculate the fundamental frequency of a tuning frok? (in Hz)
As here the tension in the wire is changed , so its fundamental frequency
Now with increase in tension,
(K√T) will increase & beats & decreasing to zero when
T = 160N (as union means frequencies are equal)
...(i)
...(ii)
Substituting the value of ‘k’ from second equation in first
f  0.9 f = 10
f = 100Hz
A column of air at 51^{o}C & a tuning frok produce 4 beats per sec. when sounded togther. As the temperature of the air column is decreased, the number of beats sec tends to decrease & when the temperature is 16^{o}c , the two produce 1 beat per sec find the frequency of the tuning frok (in Hz)
As for a given column of air f α v & V α √T
So ; f = k√T
If the frequency of the frok is ‘f'
f  k √T = 4...(i)
OR
k√T  f = 4 ...(ii)
But as with decrease in temperature beats decrease, first choice is not permissible ;
i.e (f+4) = 18k ...(iii)
i.e (f+1) = 17 k ...(iv)
So dividing eq^{n }(3) & (4) we get
Calculate the thickness of a soap bubble film (refractive index μ =1.3) that will result in constructive interference in the reflected light if the film is illuminated with light whose wavelength in free space is 5000 A^{0} (Thickness (+) is in A^{o})?
The condition for constructive interference in the reflected light or fro the brightness of soap bubble film is:
When, n = 0 ,1 ,2 ,3 ..............
If the light is incident normally on the film, then r = 0
& cos r = 1
putting the given values , we get:
for least thickness of the film (n=1)
∴ least thickness of the film
t = 961.53 A^{0}
In the given circuit V_{cc} = 8V and β = 80 for the npn transistor.The collector voltage V_{c }(in volts) is_____.
Applying KVL
5 — 100I_{B}  0.7 = 0
4.3/100 = I_{B}
I_{B }= 43mA
I_{c }= 80X 43mA
The maximum value of RL so that zener diode is 'ON ' is______(in kΩ).
= 12.5KΩ
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