# Test: Basics of Semiconductor

## 25 Questions MCQ Test Basic Electronics Engineering for SSC JE (Technical) | Test: Basics of Semiconductor

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Attempt Test: Basics of Semiconductor | 25 questions in 50 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Basic Electronics Engineering for SSC JE (Technical) for Electrical Engineering (EE) Exam | Download free PDF with solutions
QUESTION: 1

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QUESTION: 2

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QUESTION: 3

### For photo - Excitation to take place, the energy of the incident photon must Where w is the energy difference between the two stationary states.

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QUESTION: 4

For forming p type germenium, the impurity atom must have valency of

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QUESTION: 5

For forming n - type germenium the impurity atom has valency of

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QUESTION: 6

In n- type semiconductor, new discrete energy levels get created

Solution:

For an n-type semiconductor, there are more electrons in the conduction band than there are holes in the valence band. This also implies that the probability of finding an electron near the conduction band edge is larger than the probability of finding a hole at the valence band edge. Therefore, the Fermi level is closer to the conduction band in an n-type semiconductor and it lies just below the conduction band.

QUESTION: 7

In p - type germanium, new discrete levels get created

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QUESTION: 8

When a donor atom is added to a semiconductor, the donor atom

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QUESTION: 9

Drift current in germanium is caused by

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QUESTION: 10

Acceptor impurity atom in germanium results in

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QUESTION: 11

In germanium at room temperature, the forbidden energy gap EG is about

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QUESTION: 12

In silicon at room temperature, the forbidden energy gap EG is about

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QUESTION: 13

Heavy doping of a semiconductor corresponds to impurity concentration of 1 part in

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QUESTION: 14

In any conductor, the hall voltage VH is proportional to

Where B is the existing magnetic field

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QUESTION: 15

At 0 deg K the percentage of quantum state occupied upto Fermi level is

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QUESTION: 16

In an n-type semiconductor, as temperature T increases, the Fermi level EF

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QUESTION: 17

A semiconductor has ………… temperature coefficient of resistance.

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QUESTION: 18

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

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QUESTION: 19

In a p - type semiconductor, as the acceptor concentration NA is increased, the Fermi level

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QUESTION: 20

In extrinsic semiconductor, conductivity varies with respect to temperature.

Solution:

For Extrinsic Semiconductors: The conductivity decreases with rise in temperature. This is because the number of e- hole pairs increases rapidly heading to lesser effect of doping & more of neutralization of these pairs.

QUESTION: 21

Extrinsic semiconductor is a

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QUESTION: 22

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …

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QUESTION: 23

Which of following is not a trivalent impurity atom?

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QUESTION: 24

With the use of hall effect we can determine

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QUESTION: 25

Of a given specimen, hall voltage is negative the semiconductor will be

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