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Electrical Engineering (EE) Exam  >  Electrical Engineering (EE) Tests  >  Test: Electronic Devices & Circuits - 1 - Electrical Engineering (EE) MCQ

Test: Electronic Devices & Circuits - 1 - Electrical Engineering (EE) MCQ


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25 Questions MCQ Test - Test: Electronic Devices & Circuits - 1

Test: Electronic Devices & Circuits - 1 for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Test: Electronic Devices & Circuits - 1 questions and answers have been prepared according to the Electrical Engineering (EE) exam syllabus.The Test: Electronic Devices & Circuits - 1 MCQs are made for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, notes, meanings, examples, exercises, MCQs and online tests for Test: Electronic Devices & Circuits - 1 below.
Solutions of Test: Electronic Devices & Circuits - 1 questions in English are available as part of our course for Electrical Engineering (EE) & Test: Electronic Devices & Circuits - 1 solutions in Hindi for Electrical Engineering (EE) course. Download more important topics, notes, lectures and mock test series for Electrical Engineering (EE) Exam by signing up for free. Attempt Test: Electronic Devices & Circuits - 1 | 25 questions in 25 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study for Electrical Engineering (EE) Exam | Download free PDF with solutions
Test: Electronic Devices & Circuits - 1 - Question 1
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At room temperature the current in an intrinsic semiconductor is due to

Detailed Solution for Test: Electronic Devices & Circuits - 1 - Question 1

Intrinsic material has equal number of holes and electrons.

Test: Electronic Devices & Circuits - 1 - Question 2
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Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

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Work function is the minimum energy required by the fastest electron at 0 K to escape from the metal surface.

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Test: Electronic Devices & Circuits - 1 - Question 3
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The most commonly used semiconductor material is

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Germanium is rarely used.

Test: Electronic Devices & Circuits - 1 - Question 4
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In which of these is reverse recovery time nearly zero?
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In schottky diode there is no charge storage and hence almost zero reverse recovery time.

Test: Electronic Devices & Circuits - 1 - Question 5
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A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
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Current gain = 1 + β = 100.

Test: Electronic Devices & Circuits - 1 - Question 6
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In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then
Detailed Solution for Test: Electronic Devices & Circuits - 1 - Question 6

Emitter is p-type in p-n-p transistor.

Therefore holes are majority carriers.

Test: Electronic Devices & Circuits - 1 - Question 7
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In an n channel JFET, the gate is
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Since channel is n type gate must be p type.

Test: Electronic Devices & Circuits - 1 - Question 8
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The amount of photoelectric emission current depends on
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Only the intensity of incident radiation governs the amount of photoelectric emission.

Test: Electronic Devices & Circuits - 1 - Question 9
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In the circuit of figure the function of resistor R and diode D are

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Resistance limits current and diode is reverse connected and therefore protects LED against reverse breakdown.

Test: Electronic Devices & Circuits - 1 - Question 10
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Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

 
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The increase in reverse resistance is due to widening of depletion layer.

Test: Electronic Devices & Circuits - 1 - Question 11
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At very high temperatures the extrinsic semi conductors become intrinsic because
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Covalent bonds are broken.

Test: Electronic Devices & Circuits - 1 - Question 12
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When a voltage is applied to a semiconductor crystal then the free electrons will flow.
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Since electrons are negatively charged they will flow towards positive terminal.

Test: Electronic Devices & Circuits - 1 - Question 13
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Ferrite have
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Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such as Cobart, Ni, Mn. These magnetic materials having very low loss of current and used in high frequency circuit.

Test: Electronic Devices & Circuits - 1 - Question 14
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In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be
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Addition of acceptor atom brings Fermi level closer to valence band.

Test: Electronic Devices & Circuits - 1 - Question 15
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In an n-p-n transistor, the majority carriers in the base are
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Emitter is n type and emits electrons which diffuse through the base.

Test: Electronic Devices & Circuits - 1 - Question 16
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An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is
Detailed Solution for Test: Electronic Devices & Circuits - 1 - Question 16

R = = 400Ω.

R must be at least 400Ω so that current in LED does not exceed 10 mA.

Test: Electronic Devices & Circuits - 1 - Question 17
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The number of doped regions in PIN diode is
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A PIN diode has p and n doped regions separated by intrinsic layer.

Test: Electronic Devices & Circuits - 1 - Question 18
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A transistor has two p-n junctions. The batteries should be connected in active region such that
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Emitter-base junction is forward biased and base collector junction is reverse biased.

Test: Electronic Devices & Circuits - 1 - Question 19
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A silicon (PN) junction at a temperature of 20ºC has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40ºC for the same bias is approximately.
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By increasing of temperature by 10ºC, Io become double so by increasing temperature 20ºC, Io become 4 time than initial value... and it is 40 PA.

Test: Electronic Devices & Circuits - 1 - Question 20
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In a bipolar transistor the barrier potential
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Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.

Test: Electronic Devices & Circuits - 1 - Question 21
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Recombination produces new electron-hole pairs
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Due to recombination the number of electron-hole pairs is reduced.

Test: Electronic Devices & Circuits - 1 - Question 22
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An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
Detailed Solution for Test: Electronic Devices & Circuits - 1 - Question 22

Input Resistance with feedback for current shunt, .

Test: Electronic Devices & Circuits - 1 - Question 23
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As compared to an ordinary semiconductor diode, a Schottky diode
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Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor diode.

Test: Electronic Devices & Circuits - 1 - Question 24
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Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.

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Avalanche breakdown occurs at high reverse voltage.

Test: Electronic Devices & Circuits - 1 - Question 25
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As compared to an ordinary semiconductor diode, a Schottky diode
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This is due to high electron concentration in metals.

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