Test: Electronic Devices & Circuits - 2 - Electrical Engineering (EE) MCQ

Which of the following is used for generating time varying wave forms?

Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 10¹² cm^-3. Density of electrons = 8 x 10¹³ cm^-3, mobility of conduction electron = 2.3 x 10⁴ cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

An one sided abrupt junction has 10²¹/m³ of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10^-19 C, ε_r =16, ε₀ = 8.87 x 10^-12 F/m) is

n-type semiconductors

In all metals

The voltage across a zener diode

Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.

The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of

Which of these has degenerate p and n materials?

A Schottky diode clamp is used along with switching BJT for

From the given circuit below, we can conclude that.

In a piezoelectric crystal, applications of a mechanical stress would produce

In which of the following is the width of junction barrier very small?

If the reverse voltage across a p-n junction is increased three times, the junction capacitance

Which of these has highly doped p and n region?

Measurement of Hall coefficient enables the determination of

The units for transconductance are

The amount of photoelectric emission current depends on the frequency of incident light.

When a p-n junction is forward biased

The carriers of n channel JFET are

The depletion layer around p-n junction in JFET consists of

Junction temperature is always the same as room temperature.