Test: Memory Technology of Embedded Systems - Computer Science Engineering (CSE) MCQ

Explanation: The basic non-volatile memory is ROM or mask ROM, and the content of ROM is fixed in the chip which is useful in firmware programs for booting up the system.

Explanation: Flash memory is invented by Dr. Fujio Masuoka at Toshiba in the 1980s which are a non-volatile memory

Explanation: The memory arrays are basically divided into three which are random access memory, serial access memory, and content address memory. Serial access memory is divided into two, theses are shifters and queues.

Explanation: The early form of non-volatile memory is known as magnetic core memory in which the ferromagnetic ring was magnetised to store data.

Explanation: SRAM have more speed than DRAM because it has 4 to 6 transistors arranged as flip-flop logic gates, that is it can be flipped from one binary state to another but DRAM has a small capacitor as its storage element.

Explanation: The signals in address bus are multiplexed with DRAM non-multiplexed with SRAM.

Explanation: The main signals associated with memory chips are four. These are the signals associated with address bus, data bus, chip select signals, and control signals for read and write operations.

Explanation: Address bus is used to choose a particular location in the memory chip. Data bus is used to provide data to and from the chip. Chip select signals are used to select a particular chip within the memory.

Explanation: The type of processor which connects to a socket on the bottom surface of the chip that connects to the motherboard by Zero Insertion Force Socket. Intel 486 is an example of this type of connection. The processor slot is one which is soldered into a card, which connects to a motherboard by a slot. Example for slot connection is Pentium 3.

Explanation: Field programmable gate arrays is a type of multi-core architecture whose hardware function can be programmed by using hardware design tools.