# Test: Power Diode

## 20 Questions MCQ Test Power Electronics | Test: Power Diode

Description
Attempt Test: Power Diode | 20 questions in 15 minutes | Mock test for Electrical Engineering (EE) preparation | Free important questions MCQ to study Power Electronics for Electrical Engineering (EE) Exam | Download free PDF with solutions
QUESTION: 1

### An ideal power diode must have

Solution:

Large reverse breakdown voltage is desirable whereas others will increases the losses.

QUESTION: 2

### To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________

Solution:

The above process simply the one used to manufacture power diodes.

QUESTION: 3

### Power diode is __________

Solution:

It has two terminals anode and cathode same as that of a ordinary diode. In fact, a power diode is nothing but a signal diode with a extra layer.

QUESTION: 4

The V-I Characteristics of the diode lie in the

Solution:

First in the forward region & Third in the reverse biased mode.

QUESTION: 5

Which of the following is true in case of a power diode with R load?

Solution:

R load therefore V and I are linear and in phase.

QUESTION: 6

A diode is said to be reversed biased when the

Solution:

K is positive w.r.t the A when the device is reversed biased.

QUESTION: 7

A diode is said to be forward biased when the

Solution:

A is positive w.r.t the K when the device is forward biased.

QUESTION: 8

In case of an ideal power diode, the leakage current flows from

Solution:

Leakage current does not flow in IDEAL diode.

QUESTION: 9

The peak inverse current IP for a power diode is given by the expression

Solution:

The leakage current is the reveres recovery time (t) into the rate of change of current.

QUESTION: 10

A power diode with small softness factor (S-factor) has

Solution:

Peak reverse current is independent of S-factor smaller the value of S-factor larger the oscillatory over voltage.

QUESTION: 11

If V & I are the forward voltage & current respectively, then the power loss across the diode would be

Solution:

Simply power (P) is voltage into current i.e. VI

QUESTION: 12

The power loss in which of the following cases would be the maximum?

Solution:

P=VI Hence, it would be maximum when both V and I are maximum.

QUESTION: 13

Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the

Solution:

Due to the stored charges during the earlier current flow, even when the current reduces to zero due to some structural properties of the device, the device takes time to sweep out the stored charges.

QUESTION: 14

For a p-n junction diode, the peak inverse current & the reverse recovery time are dependent on

Solution:

It only depends upon the number stored charges which depends upon the rate of change of current.

QUESTION: 15

In an AC-DC converter, a diode might be used as a

Solution:

In converters diodes are used to feed the energy back to the load in case of an inductive load.

QUESTION: 16

When the p-n junction diode is forward biased, the width of the depletion region __________

Solution:

When forward biased depletion layer decreases & finally it collapses to allow the current flow.

QUESTION: 17

When the p-n junction diode is reversed biased, the width of the depletion region __________

Solution:

When reverse biased depletion layer increases until the breakdown value is reached.

QUESTION: 18

In case of a practical p-n junction diode, the rise in the junction temperature ___________

Solution:

The rise in temperature excites the charges, which go & recombine with the charges in the depletion region decreasing its width. Higher the temperature, lesser is the E.M.F required to turn on the device.

QUESTION: 19

In the equilibrium state, the barrier potential across a unbiased silicon diode is _________

Solution:

Barrier potential is due to the charges that establish an electric field across the two junctions.

QUESTION: 20

In the equilibrium state the barrier, potential across a unbiased germanium diode is __________

Solution:

Barrier potential is due to the charges that establish an electric field across the two junctions. Use Code STAYHOME200 and get INR 200 additional OFF Use Coupon Code