Test: Semiconductors - 6 - JEE MCQ
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19 Questions MCQ Test - Test: Semiconductors - 6
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Test: Semiconductors - 6 - Question 1
In pure silicon at 300 K the electron and hole concentration is each equal to 1.5 × 1016 m−3. When doped with indium, the hole concentration increases to 4.5 × 1022 m−3. What is the electron concentration in doped silicon?
Detailed Solution for Test: Semiconductors - 6 - Question 1
Detailed Solution for Test: Semiconductors - 6 - Question 2
Test: Semiconductors - 6 - Question 3
The circuit shown below contains two ideal diodes, each with a forward resistance of 
If the battery voltage is 
the current through the 
resistance (in amperes) is:
If the battery voltage is the current through the resistance (in amperes) is:
Detailed Solution for Test: Semiconductors - 6 - Question 3
Test: Semiconductors - 6 - Question 4
A Zener diode, having breakdown voltage equal to 
is used in a voltage regulator circuit shown in the figure. The current through the diode is
Detailed Solution for Test: Semiconductors - 6 - Question 4
Test: Semiconductors - 6 - Question 5
What is the Boolean expression for the gate circuit shown in Fig.
Detailed Solution for Test: Semiconductors - 6 - Question 5
Detailed Solution for Test: Semiconductors - 6 - Question 6
Detailed Solution for Test: Semiconductors - 6 - Question 7
Test: Semiconductors - 6 - Question 8
What is the maximum wavelength of electromagnetic radiation that create a electron-hole pair in material with band gap 0.7eV ? Planck's constant = 4.136 × 1015eV−s, velocity of light = 3 × 108 m/s.
Detailed Solution for Test: Semiconductors - 6 - Question 8
Detailed Solution for Test: Semiconductors - 6 - Question 9
type is at low potential and 
type is at the higher potential a diode is in forward bias.
Test: Semiconductors - 6 - Question 10
Two ideal junction diodes 
and 
are connected to a battery as shown in Fig. The current supplied by the battery is
and are connected to a battery as shown in Fig. The current supplied by the battery is
Detailed Solution for Test: Semiconductors - 6 - Question 10
is forward biased. Therefore, effective resistance is 
. Hence the current is
Test: Semiconductors - 6 - Question 11
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 
is incident on it. The band gap energy (in 
) for the semiconductor is
Detailed Solution for Test: Semiconductors - 6 - Question 11
Test: Semiconductors - 6 - Question 12
The knee point of the junction diode used in the circuit shown in Fig. is 
. A minimum current of 
is required for the diode to be above the knee point. The maximum value of 
so that the voltage across the diode is above the knee point is (assume that, above the knee point, the voltage across the diode is independent of the current).
. A minimum current of is required for the diode to be above the knee point. The maximum value of so that the voltage across the diode is above the knee point is (assume that, above the knee point, the voltage across the diode is independent of the current).
Detailed Solution for Test: Semiconductors - 6 - Question 12
must be 
. Hence maximum value of 
is
Test: Semiconductors - 6 - Question 13
A junction diode has a resistance of 
when forward biased and 
when reverse biased. The current in the arrangement shown in Fig. will be
when forward biased and when reverse biased. The current in the arrangement shown in Fig. will be
Detailed Solution for Test: Semiconductors - 6 - Question 13
. The current is
Test: Semiconductors - 6 - Question 14
In a semiconductor, it is found that 
th of the total current is carried by electrons and the remaining 
th by the holes. If at this temperature, the drift speed of electrons is 
times that of holes, the ratio of the number densities of electrons and holes is
th of the total current is carried by electrons and the remaining th by the holes. If at this temperature, the drift speed of electrons is times that of holes, the ratio of the number densities of electrons and holes is
Detailed Solution for Test: Semiconductors - 6 - Question 14
Given
Test: Semiconductors - 6 - Question 15
The electrical conductivity of a semiconductor increases when electromagnetic radiation having a wavelength shorter than 
is incident on it. The bandgap (in 
) for the semiconductor is
is incident on it. The bandgap (in ) for the semiconductor is
Detailed Solution for Test: Semiconductors - 6 - Question 15
) 
Test: Semiconductors - 6 - Question 16
An alternating voltage 
is connected across the primary of a step-down transformer of turns ratio 
. The output of the transformer is rectified as connected in the half-wave rectifier circuit as shown in Fig. If 
, the final charge on the capacitor plates is
is connected across the primary of a step-down transformer of turns ratio . The output of the transformer is rectified as connected in the half-wave rectifier circuit as shown in Fig. If , the final charge on the capacitor plates is
Detailed Solution for Test: Semiconductors - 6 - Question 16
). Hence the final charge on capacitor plates is
Test: Semiconductors - 6 - Question 17
The truth tables of two logic gates P and Q are as follows.
When the output of gate is connected to the input of gate , we get a new gate called
Detailed Solution for Test: Semiconductors - 6 - Question 17
Test: Semiconductors - 6 - Question 18
The circuit shown in Fig. contains two diodes 
and 
each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 
, the current through the 
resistance (in amperes) is
Detailed Solution for Test: Semiconductors - 6 - Question 18
Test: Semiconductors - 6 - Question 19
The resistance of a germanium junction diode, whose V − I characteristics is shown in the figure, will be (vk = 0.3 V).
Detailed Solution for Test: Semiconductors - 6 - Question 19
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